K4A8G085WB-BCPB - 8Gb DDR4 SDRAM 3200Mbps | Samsung
N.º da peça: K4A8G085WB-BCPB ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $23.625 | $23,63 |
| 10 | $17.0625 | $170,63 |
| 100 | $15.0937 | $1.509,37 |
| 500 | $14.4375 | $7.218,75 |
| 1.000 | $13.7813 | $13.781,30 |
K4A8G085WB-BCPB Visão geral
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is a volatile memory technology that transfers data on both rising and falling edges of the clock, doubling the effective data rate. Within the memory hierarchy it sits below the memory controller and above storage, serving as main system memory. DDR4 succeeded DDR3 by lowering the core supply from 1.5V to 1.2V (up to 40% power reduction), increasing bank count from 8 to 16 via bank groups, and raising densities to 8Gb and beyond.
Key features of the K4A8G085WB-BCPB include the 3200 Mbps data rate (BC speed grade), CAS Latency 22, burst length 8, and 16 banks in 4 bank groups for improved parallelism. On-die termination (ODT) and dynamic ODT improve signal integrity, while temperature-compensated self-refresh (TCSR) reduces standby power.
The device is fabricated on Samsung's advanced DRAM process (B-die generation) and supports programmable read latency (RL) and write latency (WL). It runs from a 1.2V supply (nominal) with refresh intervals of 7.8 us up to 85C operating temperature. DLL-enabled mode operation ensures precise output timing across the speed range.
Typical applications include desktop and laptop DIMMs, embedded computing boards, industrial PCs, networking equipment, and test instrumentation requiring high bandwidth in a compact footprint.
When designing in this component, match memory controller timing parameters (CL22 at 3200 Mbps), place decoupling capacitors close to the power balls, and follow the length-matched fly-by routing of DDR4 for CK/CA/DQS nets.
This page adds distributor pricing data, drop-in alternatives within the same Samsung DDR4 x8 family, and cross-brand equivalents (SK Hynix, Micron, Nanya) not found in the manufacturer datasheet alone.
Alternativas drop-in para K4A8G085WB-BCPB — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com K4A8G085WB-BCPB (mesmo formato e footprint) — diferindo em Package, Data Rate, Density, Operating Temperature, Organization.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
K4A8G085WB-BCRC
✓ Em estoque
$6.8 / unidade
Ver ficha técnica →K4A8G085WB-BITD
✓ Em estoque
$3.8 / unidade
Ver ficha técnica →K4A8G085WB-BIWE
✓ Em estoque
$6.5 / unidade
Ver ficha técnica →K4A8G085WC-BCTD
✓ Em estoque
$50.85 / unidade
Ver ficha técnica →K4A8G085WC-BIWE
✓ Em estoque
$6.29 / unidade
Ver ficha técnica →H5AN8G8NDJR
✓ Em estoque
$24.5 / unidade
Ver ficha técnica →MT40A1G8WE-075E
✓ Em estoque
$11.9 / unidade
Ver ficha técnica →K4A8G085WB-BCPB Classificações máximas e características elétricas
| Tipo de memória | DDR4 SDRAM |
| Density | 8 Gbit |
| Organização da memória | 1G x 8 |
| Tensão de alimentação | 1.2 V (nominal) |
| Taxa de dados | 3200 Mbps (PC4-25600) |
| Speed Grade | BC |
| CAS Latency (CL) | 22 |
| Burst Length | 8 |
| Bank Architecture | 16 banks (4 bank groups) |
| Refresh Interval | 7.8 us (up to 85C) |
| Tipo de interface | SSTL-12 |
| Termination | ODT / dynamic ODT |
| Self-Refresh | Temperature-Compensated Self-Refresh (TCSR) |
| Encapsulamento | 78-ball FBGA |
| Package Dimensions | 11 mm x 11 mm |
| Tipo de montagem | Surface Mount (BGA) |
| Operating Mode | DLL enabled |
| Status RoHS | Compliant |
Configuração de pinos do K4A8G085WB-BCPB
| Pino A1 | DQ0 — Data I/O bit 0 |
| Pino A2 | DQ1 — Data I/O bit 1 |
| Pino A3 | DQ2 — Data I/O bit 2 |
| Pino A7 | DQ3 — Data I/O bit 3 |
| Pino A8 | DQ4 — Data I/O bit 4 |
| Pino A9 | DQ5 — Data I/O bit 5 |
| Pino B7 | DQ6 — Data I/O bit 6 |
| Pino B8 | DQ7 — Data I/O bit 7 |
| Pino B9 | DM — Data input mask |
| Pino A4 | TDQS — Termination data strobe (tied to DQS in x8) |
| Pino B5 | TDQS# — Termination data strobe complement |
| Pino A5 | DQS — Data strobe |
| Pino B6 | DQS# — Data strobe complement |
| Pino C2 | A0 — Address input 0 |
| Pino C7 | A1 — Address input 1 |
| Pino C8 | A2 — Address input 2 |
| Pino D2 | A3 — Address input 3 |
| Pino D7 | A4 — Address input 4 |
| Pino D8 | A5 — Address input 5 |
| Pino E2 | A6 — Address input 6 |
| Pino E7 | A7 — Address input 7 |
| Pino E8 | A8 — Address input 8 |
| Pino F2 | A9 — Address input 9 |
| Pino F7 | A10 — Address input 10 / AP (auto precharge) |
| Pino F8 | A11 — Address input 11 |
| Pino G2 | A12 — Address input 12 / BC (burst chop) |
| Pino G7 | A13 — Address input 13 |
| Pino G8 | A14 — Address input 14 |
| Pino H2 | A15 — Address input 15 |
| Pino H7 | A16 — Address input 16 |
| Pino H8 | A17 — Address input 17 |
| Pino K2 | BA0 — Bank address 0 |
| Pino K7 | BA1 — Bank address 1 |
| Pino K8 | BG0 — Bank group address 0 |
| Pino L2 | BG1 — Bank group address 1 |
| Pino L7 | CK — Differential clock (positive) |
| Pino L8 | CK# — Differential clock (negative) |
| Pino M2 | CKE — Clock enable |
| Pino M7 | CS# — Chip select (active low) |
| Pino M8 | ODT — On-die termination control |
| Pino N2 | ACT# — Activation command input (active low) |
| Pino N7 | RST# — Reset (active low, pulldown) |
| Pino N8 | PAR — Command/address parity input |
| Pino P2 | ALERT# — Alert output (open drain, pulldown) |
| Pino G1 | VDDQ — DQ power supply (1.2V) |
| Pino H1 | VDDQ — DQ power supply (1.2V) |
| Pino J1 | VDDQ — DQ power supply (1.2V) |
| Pino K1 | VDDQ — DQ power supply (1.2V) |
| Pino G9 | VSSQ — DQ ground |
| Pino H9 | VSSQ — DQ ground |
| Pino J9 | VSSQ — DQ ground |
| Pino K9 | VSSQ — DQ ground |
| Pino D1 | VDD — Core power supply (1.2V) |
| Pino E1 | VDD — Core power supply (1.2V) |
| Pino F1 | VDD — Core power supply (1.2V) |
| Pino D9 | VSS — Core ground |
| Pino E9 | VSS — Core ground |
| Pino F9 | VSS — Core ground |
| Pino M1 | VDD — Core power supply (1.2V) |
| Pino N1 | VDD — Core power supply (1.2V) |
| Pino M9 | VSS — Core ground |
| Pino N9 | VSS — Core ground |
| Pino C1 | VPP — DRAM activation power supply (2.5V) |
| Pino C3 | VPP — DRAM activation power supply (2.5V) |
| Pino C9 | VPP — DRAM activation power supply (2.5V) |
| Pino B1 | VSS — Ground |
| Pino B2 | VSS — Ground |
| Pino A6 | NC — Not connected (per datasheet) |
| Pino B3 | NC — Not connected (per datasheet) |
| Pino B4 | NC — Not connected (per datasheet) |
| Pino J2 | NC — Not connected (per datasheet) |
| Pino J7 | NC — Not connected (per datasheet) |
| Pino J8 | NC — Not connected (per datasheet) |
| Pino L1 | NC — Not connected (per datasheet) |
| Pino L9 | NC — Not connected (per datasheet) |
| Pino P1 | NC — Not connected (per datasheet) |
| Pino P7 | NC — Not connected (per datasheet) |
| Pino P8 | NC — Not connected (per datasheet) |
| Pino P9 | NC — Not connected (per datasheet) |
Aplicações típicas
K4A8G085WB-BCPB é adequado para 6 aplicaçãos: Desktop and Laptop Main Memory, Embedded Computing and Industrial PCs, Networking and Communications Equipment, Server and Data Center Memory Modules, Test and Measurement Instrumentation, Medical Imaging and Diagnostic Devices.
Desktop and Laptop Main Memory
The K4A8G085WB-BCPB is a core building block for PC4-25600 UDIMM and SO-DIMM modules used in desktop and laptop computers. Its 8Gb density in a 1G x 8 organization allows eight devices to populate a 64-bit channel with ECC on x8 lanes, while the 3200 Mbps data rate at CL22 matches mainstream DDR4 memory controller support. The 1.2V rail reduces module power versus DDR3, and dynamic ODT helps maintain signal integrity across multi-rank topologies. For module designers, the 11mm x 11mm FBGA-78 footprint aligns with standard DIMM land patterns, and TCSR trims standby power in mobile sleep states, extending battery life in portable systems.
Recomendado
Embedded Computing and Industrial PCs
Industrial PCs, gateways, and embedded x86/ARM boards use the K4A8G085WB-BCPB soldered down for main memory, gaining 8Gb per device without SO-DIMM sockets that suffer from vibration. The 1.2V DDR4 interface reduces system heat in sealed fanless enclosures, while the 3200 Mbps grade matches common chipsets such as Intel Atom and AMD Ryzen Embedded families. Designers should place per-ball decoupling capacitors and length-match fly-by control nets. For extended-temperature deployments, consider the industrial-coded -BITD sibling, which shares the same footprint, keeping the PCB unchanged while improving the operating envelope.
Recomendado
Networking and Communications Equipment
Switches, routers, and network appliances rely on the K4A8G085WB-BCPB for packet buffering and deep-flow tables, where the 16-bank, 4-bank-group architecture improves random-access parallelism and effective bandwidth. The x8 organization supports ECC scrubbing essential for long-uptime infrastructure, and 3200 Mbps operation keeps memory from bottlenecking multi-gigabit data paths. The 78-ball FBGA packages densely on control-line cards. Thermal design should account for continuous full-bandwidth traffic; use air flow plus thermal vias under the package, and enable ODT per the controller's calibration routine to hold margins across temperature.
Recomendado
Server and Data Center Memory Modules
In RDIMM and ECC UDIMM builds, the K4A8G085WB-BCPB provides the x8 width required for single-device data correction (SDDC) on Intel and AMD server platforms. The BC-grade CL22 timing at DDR4-3200 aligns with standard server memory profiles, and the B-die silicon is well characterized for high reliability. Registered modules buffer command/address to scale to 16+ DIMMs per channel population. Designers stacking dual-rank DIMMs should verify CK/CA loading and drive-strength settings, and use the manufacturer datasheet refresh tables (7.8 us up to 85C) when configuring the memory controller's refresh rate in thermally constrained chassis.
Recomendado
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and arbitrary waveform generators need large, fast capture buffers, making the K4A8G085WB-BCPB a fit with its 3200 Mbps streaming capability and 8Gb per device. Multiple devices in 64-bit or 72-bit (ECC) arrays deliver the sustained write bandwidth needed for real-time acquisition without sample loss. The 1.2V interface reduces noise coupling into sensitive analog front ends versus older 1.5V DDR3 designs. Instrument designers should implement write-leveling and read-training firmware during production calibration, since FBGA soldered-down DRAM in compact boards demands precise per-trace timing closure for full-speed operation.
Recomendado
Medical Imaging and Diagnostic Devices
Ultrasound, digital radiography, and lab analyzers accumulate large frame buffers that the K4A8G085WB-BCPB serves with 8Gb density and 3200 Mbps bandwidth, enabling real-time image pipelines at 1.2V power levels suited to patient-adjacent equipment. The soldered FBGA-78 package avoids connector reliability issues in mobile carts, and temperature-compensated self-refresh keeps standby draw low between scans. Designers should verify refresh timing against the datasheet operating window and use ECC-capable x8 organization to protect diagnostic data integrity. Add ground-plane shielding between DRAM and analog capture front ends to preserve low-noise imaging performance.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para K4A8G085WB-BCPB — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | K4A8G085WB-BCRC | K4A8G085WC-BCTD | H5AN8G8NDJR | MT40A1G8WE-075E |
|---|---|---|---|---|---|
| Package | 78-ball FBGA | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same (JEDEC) | 78-ball FBGA - same (JEDEC) |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | SK Hynix | Micron |
| Density | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 |
| Data Rate | 3200 Mbps | 2666 Mbps (RC grade) | 2666 Mbps | 2666 Mbps (JR grade) | 1866 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| CAS Latency | 22 | 19 (at grade rate) | 19 | 19 | 15 |
| Bank Architecture | 16 banks / 4 bank groups | 16 banks / 4 bank groups | 16 banks / 4 bank groups | 16 banks / 4 bank groups | 16 banks / 4 bank groups |
Principais diferenciais
- Full DDR4-3200 (BC grade) speed support (vs K4A8G085WB-BCRC)
- High-volume B-die supply base (vs MT40A1G8WE-075E)
- ECC-ready x8 organization with TDQS (vs K4A8G165WC-BCWE)
Notas de projeto
Route DDR4 using the standard fly-by topology for CK, address, and command nets with on-die termination enabled; keep DQS/DQ length-matched within the controller's specified skew window. Provide at least one 0.1uF decoupling capacitor per VDD/VDDQ ball pair placed within 2mm of the package, plus bulk capacitance at the voltage regulator module. The 78-ball FBGA footprint is JEDEC-standard, so land patterns interchange freely across Samsung, SK Hynix, and Micron x8 DDR4 devices.
The K4A8G085WB-BCPB requires two rails: 1.2V VDD/VDDQ and 2.5V VPP for word-line activation. Size the VPP rail for low average current but be aware activation peaks; do not omit VPP decoupling, as VPP droop causes cell instability errors. Estimated: total active power at DDR4-3200 per device is typically a few hundred milliwatts, dominated by I/O switching; verify against the datasheet IDD figures for your specific traffic pattern.
Configure the memory controller to the BC speed grade timing tables (CL22 at 3200 Mbps) before bring-up; running faster grade timings on slower-coded parts causes intermittent bit errors. Perform write-leveling, read training, and DQS gate calibration at every boot and at temperature extremes. When substituting the -BCRC or -BITD siblings, re-verify SPD data and controller settings - the package is identical but speed bins and temperature coding differ.
Informações de conformidade
RoHS compliance per standard Samsung DRAM product data; REACH and halogen-free status not stated in provided data.
