H5CG48MEBDX014N - DDR5 16Gb 4800Mbps SDRAM | SK Hynix
N.º da peça: H5CG48MEBDX014N ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $52.1 | $52,10 |
| 10 | $49.49 | $494,90 |
| 100 | $46.89 | $4.689,00 |
| 500 | $44.29 | $22.145,00 |
| 1.000 | $41.68 | $41.680,00 |
H5CG48MEBDX014N Visão geral
DDR5 SDRAM (double data rate fifth generation synchronous dynamic random-access memory) is the current generation of main-memory DRAM used in servers, workstations, desktop PCs, and high-performance embedded systems. In the memory hierarchy, DRAM sits below CPU caches and above storage, providing the primary working memory for processors. DDR5 doubles the bank groups and banks per device versus DDR4, splits the power supply so VDDQ is separate from VDD, and moves the power management onto the module via PMIC, delivering higher bandwidth and better power efficiency than DDR4 SDRAM.
Key features of the H5CG48MEBDX014N include 16 Gbit density organized as 2G x 8, a 4800 Mbps (PC5-class) data transfer rate, a low 1.1 V nominal core operating voltage, and an operating temperature range of 0C to +95C as listed by distributors. The part carries 12 row address bits and 9 column address bits, per Octopart documentation, giving the addressing structure used in modern DDR5 memory controllers. The x8 organization simplifies ECC-based server module designs where multiple x8 devices provide chipkill-class error coverage.
The M-die generation uses SK Hynix advanced DRAM process technology to achieve the 4800 Mbps speed grade at JEDEC-standard DDR5 voltage levels. On-die termination, decision-feedback equalization, and same-bank refresh enhancements characteristic of DDR5 enable reliable signaling at these data rates on standard PCB stackups.
Typical applications include server and datacenter DIMMs, desktop and workstation UDIMMs, AI accelerators and high-performance computing boards, industrial systems requiring high memory bandwidth, and embedded compute designs.
Design consideration: DDR5 routing requires careful length matching of DQ/CA buses and proper VDDQ decoupling; always validate speed-bin settings and refresh configuration in the memory controller against the manufacturer datasheet.
This page synthesizes distributor pricing, cross-referenced drop-in alternatives including SK Hynix A-die and Samsung equivalents, and supply-chain availability data not found in the manufacturer datasheet.
Alternativas drop-in para H5CG48MEBDX014N — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com H5CG48MEBDX014N (mesmo formato e footprint) — diferindo em Package, Data Rate, Organization, Density, Interface.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
H5CG48MEBDX018N
✅ Drop-In✓ Em estoque
$1 / unidade
Ver ficha técnica →H5CG48AGBDX014N
✅ Drop-In✓ Em estoque
$70 / unidade
Ver ficha técnica →H5CG48AGBDX018N
✅ Drop-In✓ Em estoque
$87.42 / unidade
Ver ficha técnica →H5CG48AGBDX014
✅ Drop-In✓ Em estoque
$86 / unidade
Ver ficha técnica →H5CG46AGBDX017N
✅ Drop-In✓ Em estoque
$91.73 / unidade
Ver ficha técnica →K4RAH086VB-BCQK
✅ Drop-In✓ Em estoque
$41.0156 / unidade
Ver ficha técnica →H5CG48MEBDX014N Classificações máximas e características elétricas
| Tipo de memória | DDR5 SDRAM |
| Density | 16 Gbit |
| Organização da memória | 2G x 8 |
| Taxa de dados | 4800 Mbps |
| Tensão de alimentação | 1.1 V |
| Row Address | 12 bits |
| Column Address | 9 bits |
| Die Generation | M-die |
| Temperatura de operação | 0C to +95C |
| Encapsulamento | FBGA-82 (11 x 10 mm) |
| Tipo de montagem | Surface Mount |
| Tipo de interface | Parallel, DDR5 |
| Memory Class | Synchronous DRAM |
| Status RoHS | Compliant |
| Speed Class | DDR5-4800 (PC5) |
Guia de Configuração de Pinos do H5CG48MEBDX014N fbga-82 (11 x 10 mm)
Configuração de pinos para H5CG48MEBDX014N (pacote fbga-82 (11 x 10 mm)). Este CI digital inclui GPIO, interfaces de comunicação (UART, SPI, I2C) e pinos de alimentação. Consulte o datasheet do fabricante para funções alternativas dos pinos e opções de configuração. Essencial para projeto de sistemas embarcados e layout de PCB.
Nenhum dado detalhado de pinagem disponível para H5CG48MEBDX014N.
Consulte a ficha técnica para a configuração completa dos pinos.
Aplicações típicas
H5CG48MEBDX014N é adequado para 6 aplicaçãos: Server and Datacenter DIMMs, AI Accelerator and HPC Boards, Desktop and Workstation UDIMMs, Industrial and Embedded Computing, Networking and Telecommunications Equipment, Consumer Electronics and Smart Devices.
Server and Datacenter DIMMs
Server main memory is the primary application for the H5CG48MEBDX014N. Its x8 organization enables ECC-based RDIMM/LRDIMM designs where each memory symbol maps to a single device, delivering chipkill-class fault coverage for cloud and enterprise platforms. The DDR5-4800 speed bin aligns with current Intel Xeon and AMD EPYC memory specifications, while the 1.1 V operation lowers per-module power versus DDR4, reducing datacenter cooling load. The device is soldered onto module PCBs with length-matched fly-by command/address routing and onboard PMIC voltage conversion; the 16 Gb density allows 32 GB and 64 GB module capacity points with fewer devices per rank.
Recomendado
AI Accelerator and HPC Boards
AI training and inference boards use DDR5 as high-capacity host-side memory feeding accelerators, where the H5CG48MEBDX014N's 16 Gbit density and 4800 Mbps rate provide the bandwidth needed for model weights and activation buffers. According to the HTElec DDR5 comparison guide, this part class is explicitly targeted at AI computing and high-performance embedded designs. In these boards, multiple x8 devices form wide 288-bit (ECC-protected) buses; the split VDD/VDDQ rails and on-die termination of DDR5 maintain signal integrity at 4800 MT/s across long PCB traces typical of accelerator form factors.
Recomendado
Desktop and Workstation UDIMMs
Consumer and workstation UDIMMs use H5CG48MEBDX014N-class DDR5 devices to reach 16 GB, 32 GB, and 48 GB capacity points at DDR5-4800 speeds. The 1.1 V core voltage and DDR5's on-module PMIC simplify board power design, while x8 organization supports ECC on workstation platforms. In UDIMM assembly, the FBGA-82 devices are mounted on both sides of the PCB with fly-by CA routing; the 0C to +95C operating range covers standard desktop thermal envelopes. Its 4800 Mbps bin matches the memory specifications of mainstream desktop CPUs, making it a high-volume choice for PC OEM module builders.
Recomendado
Industrial and Embedded Computing
Industrial controllers, edge servers, and network appliances embed DDR5 SO-DIMMs or solder-down memory using parts like the H5CG48MEBDX014N for high-bandwidth data logging, machine vision, and protocol processing. Alibaba listings for this MPN cite industrial control and telecommunications among target uses. The 16 Gbit density allows compact single-device SO-DIMM designs, and DDR5's lower 1.1 V operation reduces thermal design constraints in fanless enclosures. Designers should validate the 0C to +95C operating range against enclosure temperatures and derate bandwidth accordingly in sustained-traffic industrial workloads.
Recomendado
Networking and Telecommunications Equipment
Routers, switches, and 5G baseband cards require large, fast working memory for packet buffering, flow tables, and control planes, making the H5CG48MEBDX014N a fit for networking line-card designs. Its 4800 Mbps rate supplies the random-access bandwidth needed for high packet-per-second processing, while the 16 Gbit density supports deep buffer scenarios in aggregation and core platforms. Broker channels serving telecom OEMs list this MPN for line-card memory upgrades. In these designs, x8 devices with ECC provide the reliability demanded by carrier-grade uptime requirements, and DDR5 refresh enhancements keep effective bandwidth high under load.
Recomendado
Consumer Electronics and Smart Devices
Premium consumer electronics - smart TVs, gaming peripherals, set-top boxes, and mini PCs - integrate DDR5 components such as the H5CG48MEBDX014N where the 16 Gbit single-device density enables compact main-memory subsystems. Wolfchip product documentation lists consumer electronics and computing devices among the target applications for this DRAM. The 1.1 V operation meets energy-efficiency expectations of modern consumer platforms, and the FBGA-82 footprint is compatible with cost-optimized 4-layer module PCBs. Designers benefit from DDR5's improved power management architecture, which shifts regulation to a low-cost PMIC and reduces board-level voltage rail count.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para H5CG48MEBDX014N — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | H5CG48MEBDX018N | H5CG48AGBDX014N | H5CG48AGBDX018N | K4RAH086VB-BCQK |
|---|---|---|---|---|---|
| Package | FBGA-82 (11x10 mm) | FBGA-82 (11x10 mm) - same | FBGA-82 (11x10 mm) - same | FBGA-82 (11x10 mm) - same | FBGA-82 (11x10 mm) - same |
| Brand | SK Hynix | SK Hynix | SK Hynix | SK Hynix | Samsung Electronics |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit |
| Data Rate | 4800 Mbps | 4800 Mbps family, faster speed suffix | 4800 Mbps | 4800 Mbps family, faster speed suffix | 4800 Mbps class |
| Operating Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
Principais diferenciais
- Lower-risk availability via M-die second generation (vs H5CG48AGBDX018N)
- Faster-bin upgrade path within identical footprint (vs H5CG48MEBDX018N)
- JEDEC-standard FBGA-82 enables cross-brand dual sourcing (vs K4RAH086VB-BCQK)
Notas de projeto
DDR5-4800 signaling demands strict fly-by routing of command/address lines with per-byte DQ/DM/DQS length matching per the DDR5 DIMM design guides. Keep DQ trace skew within the controller's training window, use on-die termination settings from the manufacturer datasheet, and simulate eye diagrams at 4800 MT/s on your PCB stackup. Multi-rank configurations amplify stub effects, so validate with full-population modules before locking the layout.
The H5CG48MEBDX014N runs on a 1.1 V core with separate VDD and VDDQ domains per DDR5 architecture. On module designs, generate the 1.1 V rail with a dedicated PMIC (12 V auxiliary input on standard DIMMs). Decouple each supply ball with an array of ceramic capacitors placed within a few millimeters; DDR5 burst currents at 4800 MT/s create high di/dt events that demand low-inductance power delivery to avoid droop-triggered refresh retries.
When substituting M-die for A-die parts (e.g., H5CG48MEBDX014N for H5CG48AGBDX018N), retrain memory on first boot: SPD data, timing tables, and equalization presets differ between die generations even within the same footprint. Counterfeit risk is documented in the broker channel (mislabeled parts failing above 4400 MT/s per community reports), so buy from authorized distributors and verify date codes and speed bins by test.
Informações de conformidade
JLCPCB lists the H5CG48MEBDX014N as ROHS compliant. Other compliance attributes not stated in provided data.
