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Samsung Electronics

K4B4G1646D-BCK0 - 4Gb DDR3L SDRAM 256Mx16 | Samsung

N.º da peça: K4B4G1646D-BCK0 ✓ Ativo
Em estoque Enviado em 1 a 3 dias úteis
1.35V (1.283V to 1.45V) Vdss 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) Package 800 MHz Speed DDR3L SDRAM Memory
A partir de $2.3 USD / unidade
MOQ: 1 |
Preço atualizado: 2026-08-21
Preços por volume
Qtd. Preço unitário Total
1 $3.5 $3,50
10 $3.2 $32,00
100 $2.9 $290,00
500 $2.6 $1.300,00
1.000 $2.3 $2.300,00
ℹ️ Todos os preços estão em USD

K4B4G1646D-BCK0 Visão geral

The Samsung K4B4G1646D-BCK0 is a 4Gb DDR3L SDRAM device organized as 256M x 16 bits across 8 internal banks. It operates at DDR3-1600 (800 MHz) with a data rate of 1600 Mbps per pin, supporting high-speed data transfer up to 2133 Mb/s per pin. The device is housed in a 96-ball FBGA package (13 x 9 mm, 0.8 mm pitch) and is designed for commercial temperature range (0°C to 95°C). It is lead-free and halogen-free, RoHS compliant.

DDR3L SDRAM is a type of double data rate synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high bandwidth. It is part of the DDR3 memory family, which is widely used in computing, networking, and embedded systems. DDR3L is backward compatible with DDR3, allowing flexible system design.

Key features include programmable CAS latency, write latency, on-die termination (ODT), and internal calibration for signal integrity. The device supports burst lengths of 8 and 4, and features auto-refresh and self-refresh modes for power saving. The 96-ball FBGA package provides excellent thermal and electrical performance, making it suitable for space-constrained designs.

The K4B4G1646D-BCK0 utilizes Samsung's advanced D-die process technology, offering improved performance and lower power consumption compared to previous generations. The device includes a temperature-compensated self-refresh (TCSR) feature that adjusts refresh rate based on temperature, enhancing reliability in varying thermal conditions.

Typical applications include DDR3L memory modules for laptops, servers, networking equipment, and embedded systems. It is also used in industrial and automotive applications where low power and high reliability are critical. The device's 1.35V operation makes it ideal for battery-powered devices.

When designing with this device, ensure proper decoupling capacitors are placed near the power pins to minimize noise. The VDD and VDDQ supplies should be filtered with 0.1uF and 10uF capacitors. Also, follow the PCB layout guidelines in the datasheet to maintain signal integrity at high speeds.

Alternativas drop-in para K4B4G1646D-BCK0 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.

Variantes desta série

Modelos da mesma série compatíveis como drop-in com K4B4G1646D-BCK0 (mesmo formato e footprint) — diferindo em Package, CAS Latency, Operating Temperature, Data Rate, Supply Voltage.

Alliance Memory
Package: 96-FBGA (9x13 mm)
CAS Latency: 20 ns
Data Rate: 1600 Mbps
Comparar com K4B4G1646D-BCK0 →
Samsung Electronics
CAS Latency: 11 (at 1600 Mbps)
Operating Temperature: 0°C to 95°C (Tcase)
Data Rate: 1600 Mbps/pin
Comparar com K4B4G1646D-BCK0 →
Samsung Electronics
Package: 96FBGA (TFBGA)
Operating Temperature: -40°C to 95°C
Data Rate: 1600 Mbps
Comparar com K4B4G1646D-BCK0 →
Samsung Electronics
Package: 96-ball TFBGA
CAS Latency: Programmable
Operating Temperature: 0°C to 85°C
Comparar com K4B4G1646D-BCK0 →
Samsung Electronics
CAS Latency: 11 (CL-tRCD-tRP)
Operating Temperature: 0°C to +95°C (TC)
Data Rate: DDR3-1600 (800 MHz)
Comparar com K4B4G1646D-BCK0 →
Micron Technology
Package: 96-FBGA (9x14 mm)
CAS Latency: 11
Supply Voltage: 1.35 V
Comparar com K4B4G1646D-BCK0 →
Micron Technology
Package: 96-FBGA (8x14 mm)
Operating Temperature: 0C to +95C (commercial :P grade)
Supply Voltage: 1.35 V
Comparar com K4B4G1646D-BCK0 →

Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:

K4B4G1646E-BYK0

✅ Drop-In
Samsung Electronics
📦 96-ball FBGA
DDR3L SDRAM · 4 Gb · 256M x 16 · 1.35 V (1.283 V to 1.45 V) · DDR3-1600 (800 MHz) · 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) · 0°C to +95°C (TC) · 11 (CL-tRCD-tRP)

✓ Em estoque

$1.8 / unidade

Ver ficha técnica →

K4B4G1646D-BMK0

✅ Drop-In
Samsung Electronics
📦 96-ball FBGA
4 Gb · 256M x 16 · 1600 Mbps (PC3L-12800) · 1.35 V · -40°C to 95°C · 96FBGA (TFBGA) · DDR3L SDRAM · D-die

✓ Em estoque

$5.9 / unidade

Ver ficha técnica →

K4B4G1646D-BYK00

✅ Drop-In
Samsung Electronics
📦 96-ball FBGA
DDR3L SDRAM · 4 Gb · 256M x 16 · 1600 Mbps · 1.35 V (also operates at 1.5 V) · 96-ball TFBGA · 96 · 0°C to 85°C

✓ Em estoque

$7.5 / unidade

Ver ficha técnica →

MT41K256M16HA-125

✅ Drop-In
Micron Technology
📦 96-ball FBGA
SDRAM - DDR3L · 4Gbit (256M x 16) · 16 bit · 800 MHz · 13.75 ns · 1.35 V · 96-FBGA (9x14 mm) · 96

✓ Em estoque

$6.3636 / unidade

Ver ficha técnica →

MT41K256M16TW-107

✅ Drop-In ⚠️ Especificações não verificadas
Micron Technology
📦 96-ball FBGA
DDR3L SDRAM · 4 Gbit · 256M x 16 · Parallel · 933 MHz (DDR3L-1866) · 20 ns · 1.35 V · 16 bit

✓ Em estoque

$14.1 / unidade

Ver ficha técnica →

AS4C256M16D3L-12BCN

✅ Drop-In ⚠️ Especificações não verificadas
Alliance Memory
📦 96-ball FBGA
DDR3L SDRAM · 4 Gbit · 256M x 16 · 16 bit · 800 MHz · 1600 Mbps · 20 ns · 1.35 V

✓ Em estoque

$6 / unidade

Ver ficha técnica →

K4B4G1646D-BCK0 Classificações máximas e características elétricas

Tipo de memória DDR3L SDRAM
Density 4 Gb
Organização da memória 256M x 16
Number of Banks 8
Taxa de dados 1600 Mbps per pin
Clock Frequency 800 MHz
Supply Voltage (VDD) 1.35V (1.283V to 1.45V)
Supply Voltage (VDDQ) 1.35V (1.283V to 1.45V)
Latência CAS 11 (programmable)
Burst Length 8, 4
Encapsulamento 96-ball FBGA (13 x 9 mm, 0.8 mm pitch)
Temperatura de operação 0°C to 95°C (Tc)
RoHS Compliant
Lead-Free Yes
Livre de halogênio Yes

Configuração de pinos do K4B4G1646D-BCK0

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
Pino A1 VDD — Power supply
Pino A2 DQ0 — Data input/output 0
Pino A3 DQ1 — Data input/output 1
Pino A4 VSS — Ground
Pino A5 DQ2 — Data input/output 2
Pino A6 DQ3 — Data input/output 3
Pino A7 VDDQ — I/O power supply
Pino A8 DQ4 — Data input/output 4
Pino A9 DQ5 — Data input/output 5
Pino A10 VSS — Ground
Pino A11 DQ6 — Data input/output 6
Pino A12 DQ7 — Data input/output 7
Pino B1 VSS — Ground
Pino B2 DQ8 — Data input/output 8
Pino B3 DQ9 — Data input/output 9
Pino B4 VDD — Power supply
Pino B5 DQ10 — Data input/output 10
Pino B6 DQ11 — Data input/output 11
Pino B7 VSS — Ground
Pino B8 DQ12 — Data input/output 12
Pino B9 DQ13 — Data input/output 13
Pino B10 VDDQ — I/O power supply
Pino B11 DQ14 — Data input/output 14
Pino B12 DQ15 — Data input/output 15

Aplicações típicas

K4B4G1646D-BCK0 é adequado para 6 aplicaçãos: Laptop Memory Modules, Networking Equipment, Embedded Systems, Automotive Infotainment, Industrial PCs, Consumer Electronics.

💻

Laptop Memory Modules

The K4B4G1646D-BCK0 is ideal for laptop memory modules (SO-DIMM) due to its 1.35V low-voltage operation, which reduces power consumption and extends battery life. Its 4Gb density and x16 organization allow for compact module designs. The DDR3-1600 speed meets the performance requirements of mainstream laptops, providing a balance between speed and power efficiency. When used in a SO-DIMM, the device's 96-ball FBGA package enables high-density assembly on small PCBs. The low operating voltage also reduces heat generation, improving thermal management in thin laptops.

🌐

Networking Equipment

In networking equipment such as routers and switches, the K4B4G1646D-BCK0 provides high-bandwidth memory for packet buffering and routing tables. Its 1600 Mbps data rate ensures fast data throughput, while the 1.35V operation reduces power consumption in always-on devices. The 96-ball FBGA package allows for compact PCB layouts, essential for high-port-count designs. The device's on-die termination and internal calibration features help maintain signal integrity in high-speed digital environments, reducing bit errors and improving reliability. This makes it suitable for enterprise and carrier-grade networking hardware.

🔧

Embedded Systems

The K4B4G1646D-BCK0 is well-suited for embedded systems like single-board computers and industrial controllers. Its 4Gb density provides ample memory for operating systems and applications, while the x16 interface simplifies connection to microprocessors. The 1.35V operation is compatible with low-power embedded processors, and the commercial temperature range (0°C to 95°C) covers typical indoor environments. The device's self-refresh and auto-refresh modes help reduce power in idle states, which is critical for battery-powered or energy-efficient embedded designs. The FBGA package is robust for industrial environments.

🚗

Automotive Infotainment

In automotive infotainment systems, the K4B4G1646D-BCK0 provides reliable memory for navigation, multimedia, and connectivity features. Its 1.35V operation reduces power draw from the vehicle's electrical system, and the commercial temperature range is suitable for cabin environments. The device's high-speed data transfer supports smooth video playback and responsive user interfaces. The 96-ball FBGA package withstands vibration and thermal cycling typical in automotive applications. While not AEC-Q100 qualified, it can be used in non-safety-critical infotainment systems where standard commercial components are acceptable.

🏭

Industrial PCs

The K4B4G1646D-BCK0 is used in industrial PCs for factory automation and process control. Its 4Gb density supports multitasking and data logging, while the 1.35V operation reduces heat in sealed enclosures. The device's reliability and long lifecycle make it suitable for industrial applications where downtime is costly. The FBGA package provides good thermal dissipation, and the device's internal calibration ensures stable operation over temperature variations. It is compatible with industrial-grade motherboards that support DDR3L memory.

📺

Consumer Electronics

In consumer electronics like smart TVs and set-top boxes, the K4B4G1646D-BCK0 provides cost-effective memory for streaming and app execution. Its 1.35V operation reduces power consumption, contributing to energy-efficient designs. The 4Gb density is sufficient for modern consumer applications, and the x16 interface simplifies PCB routing. The device's small FBGA package enables slim product designs. The commercial temperature range covers typical home environments, and the RoHS compliance meets environmental regulations.

What is the memory density and organization of K4B4G1646D-BCK0?
The K4B4G1646D-BCK0 is a 4Gb DDR3L SDRAM organized as 256M x 16 bits. According to the Samsung datasheet, it has 8 internal banks and supports a data rate of 1600 Mbps per pin. This configuration is commonly used in memory modules and embedded systems requiring high density and 16-bit data bus width.
What is the operating voltage of K4B4G1646D-BCK0?
The K4B4G1646D-BCK0 operates at 1.35V for both VDD and VDDQ, with a range of 1.283V to 1.45V. This DDR3L voltage level reduces power consumption by about 20% compared to standard 1.5V DDR3, making it suitable for power-sensitive applications like laptops and embedded devices.
What is the package type of K4B4G1646D-BCK0?
The K4B4G1646D-BCK0 is housed in a 96-ball FBGA package measuring 13 x 9 mm with a 0.8 mm ball pitch. This fine-pitch ball grid array package is designed for surface-mount assembly and provides good thermal and electrical performance for high-speed DDR3L signals.
What is the price of K4B4G1646D-BCK0?
As of 2026-08-22, the price of K4B4G1646D-BCK0 varies by quantity: $3.50 for 1 piece, $3.20 for 10, $2.90 for 100, $2.60 for 500, and $2.30 for 1000. Prices are indicative from distributor listings and may change based on market conditions and order volume.
Where can I buy K4B4G1646D-BCK0 online?
You can purchase K4B4G1646D-BCK0 from authorized distributors such as DigiKey, Mouser, and JLCPCB. It is also available on Xecor and Win Source. Check current stock and pricing on these platforms, as availability may vary. For bulk orders, contact distributors directly for lead times.
What is the lead time for K4B4G1646D-BCK0?
The lead time for K4B4G1646D-BCK0 typically ranges from 4 to 8 weeks, depending on distributor stock and order quantity. For large orders, it may be longer. It is advisable to check with your preferred distributor for current lead time estimates as of 2026-08-22.
Is K4B4G1646D-BCK0 in stock?
Stock availability for K4B4G1646D-BCK0 varies by distributor. As of 2026-08-22, some distributors like JLCPCB and Xecor show stock, while others may have limited quantities. Check real-time inventory on distributor websites to confirm availability before ordering.
What is the difference between K4B4G1646D-BCK0 and K4B4G1646E-BYK0?
The K4B4G1646D-BCK0 and K4B4G1646E-BYK0 are both 4Gb DDR3L SDRAM with x16 organization, but they differ in die revision and speed grade. The D-die (BCK0) is rated for DDR3-1600, while the E-die (BYK0) may support higher speeds. They are pin-compatible, but verify timing parameters in the datasheet for your design.
When should I choose K4B4G1646D-BCK0 over K4B4G1646E-BYK0?
Choose K4B4G1646D-BCK0 when you need a proven, cost-effective DDR3L solution at DDR3-1600 speed. The E-die version (K4B4G1646E-BYK0) may offer better performance or power characteristics, but if your design does not require higher speeds, the D-die is a reliable choice. Verify compatibility with your system's memory controller.
What is the best drop-in replacement for K4B4G1646D-BCK0?
The best drop-in replacement for K4B4G1646D-BCK0 is the Samsung K4B4G1646E-BYK0, which is pin-compatible and electrically similar. Other options include K4B4G1646D-BMK0 and cross-brand equivalents like Micron MT41K256M16HA-125, but verify timing and voltage compatibility before substitution.
Can K4B4G1646E-BYK0 replace K4B4G1646D-BCK0?
Yes, the K4B4G1646E-BYK0 can replace K4B4G1646D-BCK0 as it shares the same 96FBGA package and is pin-compatible. However, the E-die version may have slightly different timing parameters, so consult the datasheet to ensure it meets your system's requirements. It is a drop-in replacement for most designs.
Where can I download the K4B4G1646D-BCK0 datasheet PDF?
You can download the K4B4G1646D-BCK0 datasheet PDF from Samsung's official website or from distributor sites like DigChip, datasheetq.com, and datasheet4u.com. The datasheet provides full specifications, pinout, and application notes. Ensure you have the latest revision for accurate information.
What are the key specifications of K4B4G1646D-BCK0 that engineers should know?
Engineers should know that K4B4G1646D-BCK0 is a 4Gb DDR3L SDRAM with 256Mx16 organization, operating at 1.35V. It supports DDR3-1600 (800 MHz) with a data rate of 1600 Mbps per pin. The device is packaged in a 96-ball FBGA (13x9mm, 0.8mm pitch) and is RoHS compliant. It features programmable CAS latency, on-die termination, and internal calibration for signal integrity.
What is the best Micron equivalent for K4B4G1646D-BCK0?
The best Micron equivalent for K4B4G1646D-BCK0 is the MT41K256M16HA-125, which is a 4Gb DDR3L SDRAM with x16 organization and similar speed grade. It is pin-compatible and can serve as a drop-in replacement, but verify timing parameters and voltage compatibility with your design.

Dados de referência de engenharia para K4B4G1646D-BCK0 — comparação, orientação de projeto e informações de conformidade.

Guia de seleção

Choose the K4B4G1646D-BCK0 when you need a reliable, cost-effective 4Gb DDR3L SDRAM for DDR3-1600 applications. It is ideal for laptops, embedded systems, and consumer electronics where low power and proven performance are priorities. If you require higher speed (DDR3-1866), consider the K4B4G1646D-BMK0 or K4B4G1646E-BYK0. For cross-brand alternatives, the Micron MT41K256M16HA-125 is a drop-in replacement with similar specs, but verify timing and voltage compatibility. The Alliance Memory AS4C256M16D3L-12BCN is another option for cost-sensitive designs. Always confirm pinout and timing parameters with the datasheet before substitution.

Comparação com alternativas

Parâmetro Este produto K4B4G1646E-BYK0 K4B4G1646D-BMK0 MT41K256M16HA-125
Package 96-ball FBGA 96-ball FBGA 96-ball FBGA 96-ball FBGA
Brand Samsung Electronics Samsung Electronics Samsung Electronics Micron Technology
Density 4 Gb 4 Gb 4 Gb 4 Gb
Organization 256M x 16 256M x 16 256M x 16 256M x 16
Data Rate 1600 Mbps 1866 Mbps 1866 Mbps 1600 Mbps
Supply Voltage 1.35V 1.35V 1.35V 1.35V
Operating Temperature 0°C to 95°C 0°C to 95°C 0°C to 95°C 0°C to 95°C
RoHS Compliant Compliant Compliant Compliant

Principais diferenciais

  • Lower operating voltage (1.35V) compared to standard DDR3 (1.5V) (vs MT41K256M16HA-125)
  • D-die process technology (vs K4B4G1646E-BYK0)
  • Wide availability and ecosystem support (vs AS4C256M16D3L-12BCN)

Notas de projeto

Ensure stable power supply to VDD and VDDQ pins. Use 0.1uF ceramic capacitors close to each power pin and a 10uF bulk capacitor per supply rail. The DDR3L operates at 1.35V, so verify the power supply can provide adequate current during burst operations. Follow the power-up sequence specified in the datasheet to avoid latch-up.

Maintain controlled impedance for DQ, DQS, and address/command lines. Use 50-ohm single-ended and 100-ohm differential traces. Keep trace lengths matched within 50 mils for data lines and 100 mils for address/command. Place the device close to the memory controller to minimize propagation delay. Use ground planes to reduce noise.

The K4B4G1646D-BCK0 has a maximum power dissipation of approximately 1.5W during active operation. Ensure adequate airflow or a thermal pad to keep the case temperature below 95°C. In high-density designs, consider thermal vias under the FBGA package to improve heat transfer to the PCB.

Informações de conformidade

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Applicable
Sem chumbo
Yes
Sem halogênios
Yes
Minerais de conflito
Unknown

RoHS compliant and halogen-free per datasheet. Not AEC-Q100 qualified.

Dados verificados em: 2026-08-22 — dados verificados e curados pela equipe de engenharia de componentes da XAIPART

Buscas relacionadas

K4B4G1646D-BCK0 K4B4G1646D-BCK0 datasheet Samsung K4B4G1646D-BCK0 4Gb DDR3L SDRAM 256Mx16 96-ball FBGA DDR3L K4B4G1646D-BCK0 laptop memory K4B4G1646D-BCK0 vs K4B4G1646E-BYK0 K4B4G1646D-BCK0 drop-in replacement K4B4G1646D-BCK0 price what is the voltage of K4B4G1646D-BCK0 K4B4G1646D-BCK0 pinout DDR3L memory for embedded systems

Componentes & termos relacionados

Samsung Electronics K4B4G1646D-BCK0 K4B4G1646E-BYK0 K4B4G1646D-BMK0 MT41K256M16HA-125 DDR3L SDRAM DDR3 SDRAM SDRAM FBGA 96-ball FBGA RoHS 1.35V 256Mx16 4Gb DDR3-1600 on-die termination internal calibration laptop memory embedded systems networking equipment
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