K4B4G1646D-BCK0 - 4Gb DDR3L SDRAM 256Mx16 | Samsung
Référence : K4B4G1646D-BCK0 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $3.5 | $3,50 |
| 10 | $3.2 | $32,00 |
| 100 | $2.9 | $290,00 |
| 500 | $2.6 | $1 300,00 |
| 1 000 | $2.3 | $2 300,00 |
K4B4G1646D-BCK0 Présentation
DDR3L SDRAM is a type of double data rate synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high bandwidth. It is part of the DDR3 memory family, which is widely used in computing, networking, and embedded systems. DDR3L is backward compatible with DDR3, allowing flexible system design.
Key features include programmable CAS latency, write latency, on-die termination (ODT), and internal calibration for signal integrity. The device supports burst lengths of 8 and 4, and features auto-refresh and self-refresh modes for power saving. The 96-ball FBGA package provides excellent thermal and electrical performance, making it suitable for space-constrained designs.
The K4B4G1646D-BCK0 utilizes Samsung's advanced D-die process technology, offering improved performance and lower power consumption compared to previous generations. The device includes a temperature-compensated self-refresh (TCSR) feature that adjusts refresh rate based on temperature, enhancing reliability in varying thermal conditions.
Typical applications include DDR3L memory modules for laptops, servers, networking equipment, and embedded systems. It is also used in industrial and automotive applications where low power and high reliability are critical. The device's 1.35V operation makes it ideal for battery-powered devices.
When designing with this device, ensure proper decoupling capacitors are placed near the power pins to minimize noise. The VDD and VDDQ supplies should be filtered with 0.1uF and 10uF capacitors. Also, follow the PCB layout guidelines in the datasheet to maintain signal integrity at high speeds.
Alternatives de remplacement direct pour K4B4G1646D-BCK0 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec K4B4G1646D-BCK0 (même facteur de forme et même empreinte) — différant par Package, CAS Latency, Operating Temperature, Data Rate, Supply Voltage.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K4B4G1646E-BYK0
✅ Remplacement direct✓ En stock
$1.8 / unité
Voir la fiche technique →K4B4G1646D-BMK0
✅ Remplacement direct✓ En stock
$5.9 / unité
Voir la fiche technique →K4B4G1646D-BYK00
✅ Remplacement direct✓ En stock
$7.5 / unité
Voir la fiche technique →MT41K256M16HA-125
✅ Remplacement direct✓ En stock
$6.3636 / unité
Voir la fiche technique →MT41K256M16TW-107
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$14.1 / unité
Voir la fiche technique →AS4C256M16D3L-12BCN
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$6 / unité
Voir la fiche technique →K4B4G1646D-BCK0 Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR3L SDRAM |
| Density | 4 Gb |
| Organisation de la mémoire | 256M x 16 |
| Number of Banks | 8 |
| Débit de données | 1600 Mbps per pin |
| Clock Frequency | 800 MHz |
| Supply Voltage (VDD) | 1.35V (1.283V to 1.45V) |
| Supply Voltage (VDDQ) | 1.35V (1.283V to 1.45V) |
| Latence CAS | 11 (programmable) |
| Burst Length | 8, 4 |
| Boîtier | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| Température de fonctionnement | 0°C to 95°C (Tc) |
| RoHS | Compliant |
| Lead-Free | Yes |
| Sans halogène | Yes |
Configuration des broches de K4B4G1646D-BCK0
| Broche A1 | VDD — Power supply |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche A4 | VSS — Ground |
| Broche A5 | DQ2 — Data input/output 2 |
| Broche A6 | DQ3 — Data input/output 3 |
| Broche A7 | VDDQ — I/O power supply |
| Broche A8 | DQ4 — Data input/output 4 |
| Broche A9 | DQ5 — Data input/output 5 |
| Broche A10 | VSS — Ground |
| Broche A11 | DQ6 — Data input/output 6 |
| Broche A12 | DQ7 — Data input/output 7 |
| Broche B1 | VSS — Ground |
| Broche B2 | DQ8 — Data input/output 8 |
| Broche B3 | DQ9 — Data input/output 9 |
| Broche B4 | VDD — Power supply |
| Broche B5 | DQ10 — Data input/output 10 |
| Broche B6 | DQ11 — Data input/output 11 |
| Broche B7 | VSS — Ground |
| Broche B8 | DQ12 — Data input/output 12 |
| Broche B9 | DQ13 — Data input/output 13 |
| Broche B10 | VDDQ — I/O power supply |
| Broche B11 | DQ14 — Data input/output 14 |
| Broche B12 | DQ15 — Data input/output 15 |
Applications typiques
K4B4G1646D-BCK0 convient pour 6 applications: Laptop Memory Modules, Networking Equipment, Embedded Systems, Automotive Infotainment, Industrial PCs, Consumer Electronics.
Laptop Memory Modules
The K4B4G1646D-BCK0 is ideal for laptop memory modules (SO-DIMM) due to its 1.35V low-voltage operation, which reduces power consumption and extends battery life. Its 4Gb density and x16 organization allow for compact module designs. The DDR3-1600 speed meets the performance requirements of mainstream laptops, providing a balance between speed and power efficiency. When used in a SO-DIMM, the device's 96-ball FBGA package enables high-density assembly on small PCBs. The low operating voltage also reduces heat generation, improving thermal management in thin laptops.
Recommandé
Networking Equipment
In networking equipment such as routers and switches, the K4B4G1646D-BCK0 provides high-bandwidth memory for packet buffering and routing tables. Its 1600 Mbps data rate ensures fast data throughput, while the 1.35V operation reduces power consumption in always-on devices. The 96-ball FBGA package allows for compact PCB layouts, essential for high-port-count designs. The device's on-die termination and internal calibration features help maintain signal integrity in high-speed digital environments, reducing bit errors and improving reliability. This makes it suitable for enterprise and carrier-grade networking hardware.
Recommandé
Embedded Systems
The K4B4G1646D-BCK0 is well-suited for embedded systems like single-board computers and industrial controllers. Its 4Gb density provides ample memory for operating systems and applications, while the x16 interface simplifies connection to microprocessors. The 1.35V operation is compatible with low-power embedded processors, and the commercial temperature range (0°C to 95°C) covers typical indoor environments. The device's self-refresh and auto-refresh modes help reduce power in idle states, which is critical for battery-powered or energy-efficient embedded designs. The FBGA package is robust for industrial environments.
Recommandé
Automotive Infotainment
In automotive infotainment systems, the K4B4G1646D-BCK0 provides reliable memory for navigation, multimedia, and connectivity features. Its 1.35V operation reduces power draw from the vehicle's electrical system, and the commercial temperature range is suitable for cabin environments. The device's high-speed data transfer supports smooth video playback and responsive user interfaces. The 96-ball FBGA package withstands vibration and thermal cycling typical in automotive applications. While not AEC-Q100 qualified, it can be used in non-safety-critical infotainment systems where standard commercial components are acceptable.
Recommandé
Industrial PCs
The K4B4G1646D-BCK0 is used in industrial PCs for factory automation and process control. Its 4Gb density supports multitasking and data logging, while the 1.35V operation reduces heat in sealed enclosures. The device's reliability and long lifecycle make it suitable for industrial applications where downtime is costly. The FBGA package provides good thermal dissipation, and the device's internal calibration ensures stable operation over temperature variations. It is compatible with industrial-grade motherboards that support DDR3L memory.
Recommandé
Consumer Electronics
In consumer electronics like smart TVs and set-top boxes, the K4B4G1646D-BCK0 provides cost-effective memory for streaming and app execution. Its 1.35V operation reduces power consumption, contributing to energy-efficient designs. The 4Gb density is sufficient for modern consumer applications, and the x16 interface simplifies PCB routing. The device's small FBGA package enables slim product designs. The commercial temperature range covers typical home environments, and the RoHS compliance meets environmental regulations.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K4B4G1646D-BCK0 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K4B4G1646E-BYK0 | K4B4G1646D-BMK0 | MT41K256M16HA-125 |
|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Data Rate | 1600 Mbps | 1866 Mbps | 1866 Mbps | 1600 Mbps |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Operating Temperature | 0°C to 95°C | 0°C to 95°C | 0°C to 95°C | 0°C to 95°C |
| RoHS | Compliant | Compliant | Compliant | Compliant |
Principaux différenciateurs
- Lower operating voltage (1.35V) compared to standard DDR3 (1.5V) (vs MT41K256M16HA-125)
- D-die process technology (vs K4B4G1646E-BYK0)
- Wide availability and ecosystem support (vs AS4C256M16D3L-12BCN)
Notes de conception
Ensure stable power supply to VDD and VDDQ pins. Use 0.1uF ceramic capacitors close to each power pin and a 10uF bulk capacitor per supply rail. The DDR3L operates at 1.35V, so verify the power supply can provide adequate current during burst operations. Follow the power-up sequence specified in the datasheet to avoid latch-up.
Maintain controlled impedance for DQ, DQS, and address/command lines. Use 50-ohm single-ended and 100-ohm differential traces. Keep trace lengths matched within 50 mils for data lines and 100 mils for address/command. Place the device close to the memory controller to minimize propagation delay. Use ground planes to reduce noise.
The K4B4G1646D-BCK0 has a maximum power dissipation of approximately 1.5W during active operation. Ensure adequate airflow or a thermal pad to keep the case temperature below 95°C. In high-density designs, consider thermal vias under the FBGA package to improve heat transfer to the PCB.
Informations de conformité
RoHS compliant and halogen-free per datasheet. Not AEC-Q100 qualified.
