AS4C256M16D3L-12BCN - 4Gbit DDR3L SDRAM 800MHz | Alliance Memory
N.º da peça: AS4C256M16D3L-12BCN ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.8 | $78,00 |
| 100 | $7.1 | $710,00 |
| 500 | $6.5 | $3.250,00 |
| 1.000 | $6 | $6.000,00 |
AS4C256M16D3L-12BCN Visão geral
DDR3L (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory (SDRAM) that operates at a reduced supply voltage of 1.35V, compared to standard DDR3's 1.5V. This lower voltage reduces power consumption by up to 20% while maintaining similar performance, making it ideal for power-sensitive applications such as laptops, embedded systems, and networking equipment. DDR3L is part of the DDR SDRAM family, which includes DDR, DDR2, DDR3, and DDR4, each offering increased speed and lower power.
Key features include a parallel interface with a 16-bit data bus, 800MHz clock speed, and a CAS latency of 20ns. The device supports JEDEC clock jitter specifications, ensuring reliable operation in high-speed systems. The 96-ball FBGA package provides excellent thermal and electrical performance, with a compact footprint suitable for space-constrained designs.
The AS4C256M16D3L-12BCN utilizes advanced CMOS technology to achieve high density and low power consumption. It supports various burst lengths and programmable CAS latency, allowing flexibility in system design. The device also includes on-die termination (ODT) and dynamic ODT for improved signal integrity, reducing the need for external termination resistors.
Typical applications include networking equipment (routers, switches), industrial automation, embedded computing, and consumer electronics such as set-top boxes and smart TVs. Its low voltage and high bandwidth make it suitable for DDR3L-based systems requiring 4Gbit density.
When designing with this memory, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a 1.35V supply and a separate VDDQ, which should be regulated accurately.
Alternativas drop-in para AS4C256M16D3L-12BCN — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com AS4C256M16D3L-12BCN (mesmo formato e footprint) — diferindo em Package, Supply Voltage, CAS Latency, Data Rate, Operating Temperature.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
AS4C256M16D3LB-12BCN
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
AS4C256M16D3A-12BCN
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
AS4C256M16D3-12BCN
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MT41K256M16HA-125
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$6.3636 / unidade
Ver ficha técnica →IS43TR16512B-125KBLI
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
K4B4G1646E-BYMA
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$14.3182 / unidade
Ver ficha técnica →AS4C256M16D3L-12BCN Classificações máximas e características elétricas
| Tipo de memória | DDR3L SDRAM |
| Tamanho da memória | 4 Gbit |
| Organização da memória | 256M x 16 |
| Largura do barramento de dados | 16 bit |
| Frequência máxima de clock | 800 MHz |
| Taxa de dados | 1600 Mbps |
| Latência CAS | 20 ns |
| Tensão de alimentação | 1.35 V |
| Encapsulamento | 96-FBGA (9x13 mm) |
| Estilo de montagem | SMD/SMT |
| Faixa de temperatura de operação | 0C to +95C (Tc) |
| RoHS | Compliant |
| Livre de halogênio | Yes |
| Tipo de interface | Parallel |
| Número de pinos | 96 |
Configuração de pinos do AS4C256M16D3L-12BCN
| Pino A1 | VDD — Power supply (1.35V) |
| Pino A2 | DQ0 — Data input/output 0 |
| Pino A3 | DQ1 — Data input/output 1 |
| Pino A4 | VSS — Ground |
| Pino A5 | DQ2 — Data input/output 2 |
| Pino A6 | DQ3 — Data input/output 3 |
| Pino A7 | VDDQ — I/O power supply |
| Pino A8 | DQ4 — Data input/output 4 |
| Pino A9 | DQ5 — Data input/output 5 |
| Pino A10 | VSS — Ground |
| Pino A11 | DQ6 — Data input/output 6 |
| Pino A12 | DQ7 — Data input/output 7 |
| Pino B1 | VSS — Ground |
| Pino B2 | DQ8 — Data input/output 8 |
| Pino B3 | DQ9 — Data input/output 9 |
| Pino B4 | VDD — Power supply |
| Pino B5 | DQ10 — Data input/output 10 |
| Pino B6 | DQ11 — Data input/output 11 |
| Pino B7 | VSS — Ground |
| Pino B8 | DQ12 — Data input/output 12 |
| Pino B9 | DQ13 — Data input/output 13 |
| Pino B10 | VDDQ — I/O power supply |
| Pino B11 | DQ14 — Data input/output 14 |
| Pino B12 | DQ15 — Data input/output 15 |
| Pino C1 | VDDQ — I/O power supply |
| Pino C2 | VSS — Ground |
| Pino C3 | VDD — Power supply |
| Pino C4 | VSS — Ground |
| Pino C5 | VDDQ — I/O power supply |
| Pino C6 | VSS — Ground |
| Pino C7 | VDD — Power supply |
| Pino C8 | VSS — Ground |
| Pino C9 | VDDQ — I/O power supply |
| Pino C10 | VSS — Ground |
| Pino C11 | VDD — Power supply |
| Pino C12 | VSS — Ground |
| Pino D1 | A0 — Address input 0 |
| Pino D2 | A1 — Address input 1 |
| Pino D3 | A2 — Address input 2 |
| Pino D4 | A3 — Address input 3 |
| Pino D5 | A4 — Address input 4 |
| Pino D6 | A5 — Address input 5 |
| Pino D7 | A6 — Address input 6 |
| Pino D8 | A7 — Address input 7 |
| Pino D9 | A8 — Address input 8 |
| Pino D10 | A9 — Address input 9 |
| Pino D11 | A10/AP — Address input 10 / Auto-precharge |
| Pino D12 | A11 — Address input 11 |
| Pino E1 | A12 — Address input 12 |
| Pino E2 | A13 — Address input 13 |
| Pino E3 | A14 — Address input 14 |
| Pino E4 | BA0 — Bank address 0 |
| Pino E5 | BA1 — Bank address 1 |
| Pino E6 | BA2 — Bank address 2 |
| Pino E7 | RAS# — Row address strobe |
| Pino E8 | CAS# — Column address strobe |
| Pino E9 | WE# — Write enable |
| Pino E10 | CS# — Chip select |
| Pino E11 | CKE — Clock enable |
| Pino E12 | ODT — On-die termination |
| Pino F1 | CK — Clock (positive) |
| Pino F2 | CK# — Clock (negative) |
| Pino F3 | VDD — Power supply |
| Pino F4 | VSS — Ground |
| Pino F5 | VDDQ — I/O power supply |
| Pino F6 | VSS — Ground |
| Pino F7 | VDD — Power supply |
| Pino F8 | VSS — Ground |
| Pino F9 | VDDQ — I/O power supply |
| Pino F10 | VSS — Ground |
| Pino F11 | VDD — Power supply |
| Pino F12 | VSS — Ground |
| Pino G1 | DM0 — Data mask 0 |
| Pino G2 | DM1 — Data mask 1 |
| Pino G3 | VSS — Ground |
| Pino G4 | VDD — Power supply |
| Pino G5 | VSS — Ground |
| Pino G6 | VDDQ — I/O power supply |
| Pino G7 | VSS — Ground |
| Pino G8 | VDD — Power supply |
| Pino G9 | VSS — Ground |
| Pino G10 | VDDQ — I/O power supply |
| Pino G11 | VSS — Ground |
| Pino G12 | VDD — Power supply |
| Pino H1 | DQS0 — Data strobe 0 |
| Pino H2 | DQS0# — Data strobe 0 (negative) |
| Pino H3 | DQS1 — Data strobe 1 |
| Pino H4 | DQS1# — Data strobe 1 (negative) |
| Pino H5 | VDDQ — I/O power supply |
| Pino H6 | VSS — Ground |
| Pino H7 | VDD — Power supply |
| Pino H8 | VSS — Ground |
| Pino H9 | VDDQ — I/O power supply |
| Pino H10 | VSS — Ground |
| Pino H11 | VDD — Power supply |
| Pino H12 | VSS — Ground |
| Pino J1 | RESET# — Reset (active low) |
| Pino J2 | VDD — Power supply |
| Pino J3 | VSS — Ground |
| Pino J4 | VDDQ — I/O power supply |
| Pino J5 | VSS — Ground |
| Pino J6 | VDD — Power supply |
| Pino J7 | VSS — Ground |
| Pino J8 | VDDQ — I/O power supply |
| Pino J9 | VSS — Ground |
| Pino J10 | VDD — Power supply |
| Pino J11 | VSS — Ground |
| Pino J12 | VDDQ — I/O power supply |
| Pino K1 | VSS — Ground |
| Pino K2 | VDDQ — I/O power supply |
| Pino K3 | VSS — Ground |
| Pino K4 | VDD — Power supply |
| Pino K5 | VSS — Ground |
| Pino K6 | VDDQ — I/O power supply |
| Pino K7 | VSS — Ground |
| Pino K8 | VDD — Power supply |
| Pino K9 | VSS — Ground |
| Pino K10 | VDDQ — I/O power supply |
| Pino K11 | VSS — Ground |
| Pino K12 | VDD — Power supply |
| Pino L1 | VDDQ — I/O power supply |
| Pino L2 | VSS — Ground |
| Pino L3 | VDD — Power supply |
| Pino L4 | VSS — Ground |
| Pino L5 | VDDQ — I/O power supply |
| Pino L6 | VSS — Ground |
| Pino L7 | VDD — Power supply |
| Pino L8 | VSS — Ground |
| Pino L9 | VDDQ — I/O power supply |
| Pino L10 | VSS — Ground |
| Pino L11 | VDD — Power supply |
| Pino L12 | VSS — Ground |
| Pino M1 | VSS — Ground |
| Pino M2 | VDD — Power supply |
| Pino M3 | VSS — Ground |
| Pino M4 | VDDQ — I/O power supply |
| Pino M5 | VSS — Ground |
| Pino M6 | VDD — Power supply |
| Pino M7 | VSS — Ground |
| Pino M8 | VDDQ — I/O power supply |
| Pino M9 | VSS — Ground |
| Pino M10 | VDD — Power supply |
| Pino M11 | VSS — Ground |
| Pino M12 | VDDQ — I/O power supply |
| Pino N1 | VDD — Power supply |
| Pino N2 | VSS — Ground |
| Pino N3 | VDDQ — I/O power supply |
| Pino N4 | VSS — Ground |
| Pino N5 | VDD — Power supply |
| Pino N6 | VSS — Ground |
| Pino N7 | VDDQ — I/O power supply |
| Pino N8 | VSS — Ground |
| Pino N9 | VDD — Power supply |
| Pino N10 | VSS — Ground |
| Pino N11 | VDDQ — I/O power supply |
| Pino N12 | VSS — Ground |
Aplicações típicas
AS4C256M16D3L-12BCN é adequado para 6 aplicaçãos: Networking Equipment, Industrial Automation, Embedded Computing, Consumer Electronics, Data Storage Systems, Test and Measurement.
Networking Equipment
The AS4C256M16D3L-12BCN provides high-bandwidth, low-power memory for routers and switches. Its 800MHz clock and 16-bit bus enable fast packet processing, while 1.35V operation reduces power in always-on network devices. The 4Gbit density supports large routing tables and buffering. In a router, it is used as main memory for the CPU and NPU, with the parallel interface connecting directly to the memory controller. Performance is critical for line-rate forwarding, and the DDR3L interface ensures low latency. Power dissipation is minimized due to the low voltage, which is essential for fanless designs.
Recomendado
Industrial Automation
In industrial controllers and PLCs, the AS4C256M16D3L-12BCN offers reliable, low-power memory for real-time data logging and control algorithms. Its 4Gbit capacity allows storing large process variables, and the 1.35V supply is compatible with energy-efficient industrial power rails. The 96-FBGA package withstands harsh environments with proper thermal management. The memory is used in conjunction with an MCU or FPGA, providing fast access for deterministic control loops. The DDR3L interface supports high-speed data transfer, while the low voltage reduces heat generation in sealed enclosures. This makes it ideal for factory automation and robotics.
Recomendado
Embedded Computing
The AS4C256M16D3L-12BCN is ideal for embedded computing modules, such as single-board computers and edge gateways. Its 4Gbit density provides ample memory for operating systems and applications, while the 1.35V operation reduces power consumption in battery-powered or thermally constrained systems. The 800MHz clock enables responsive multitasking. In an embedded system, the memory is typically connected to a processor's memory controller, with the parallel interface simplifying PCB layout. The low voltage and high bandwidth make it suitable for IoT gateways and industrial PCs, where reliability and efficiency are paramount.
Recomendado
Consumer Electronics
For set-top boxes, smart TVs, and gaming consoles, the AS4C256M16D3L-12BCN provides high-speed memory for multimedia processing. Its 4Gbit capacity supports HD video streaming and multitasking, while the 1.35V supply helps meet energy efficiency standards. The 96-FBGA package is compact, fitting into slim device designs. The memory is used for buffering video frames and storing application data, with the parallel interface ensuring high throughput. The low power consumption is beneficial for always-on devices, and the RoHS compliance meets environmental regulations.
Recomendado
Data Storage Systems
In NAS and SSD controllers, the AS4C256M16D3L-12BCN serves as cache memory, providing fast access to frequently used data. Its 4Gbit capacity and 800MHz speed enable high throughput, while the 1.35V operation reduces power in storage devices that run 24/7. The parallel interface connects directly to the controller, and the low voltage helps meet energy efficiency requirements. The memory's reliability is crucial for data integrity, and the FBGA package offers good thermal performance in dense storage arrays.
Recomendado
Test and Measurement
The AS4C256M16D3L-12BCN is used in oscilloscopes and signal analyzers for high-speed data acquisition and waveform storage. Its 4Gbit capacity allows capturing long records, and the 800MHz clock supports fast sampling rates. The 1.35V supply reduces power in portable instruments. The memory is interfaced with FPGAs or DSPs, providing high bandwidth for real-time processing. The low voltage and compact package make it suitable for benchtop and handheld devices, where space and power are limited.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para AS4C256M16D3L-12BCN — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | AS4C256M16D3LB-12BCN | AS4C256M16D3A-12BCN | AS4C256M16D3-12BCN | MT41K256M16HA-125 | IS43TR16512B-125KBLI | K4B4G1646E-BYMA |
|---|---|---|---|---|---|---|---|
| Package | 96-FBGA (9x13 mm) | 96-FBGA (9x13 mm) | 96-FBGA (9x13 mm) | 96-FBGA (9x13 mm) | 96-FBGA (9x13 mm) | 96-FBGA (9x13 mm) | 96-FBGA (9x13 mm) |
| Brand | Alliance Memory | Alliance Memory | Alliance Memory | Alliance Memory | Micron Technology | ISSI | Samsung Electronics |
| Memory Size | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.5 V | 1.35 V | 1.35 V | 1.35 V |
| Max Clock Frequency | 800 MHz | 800 MHz | 800 MHz | 800 MHz | 800 MHz | 800 MHz | 800 MHz |
| CAS Latency | 20 ns | 20 ns | 20 ns | 20 ns | 13.75 ns | 13.75 ns | 13.75 ns |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Principais diferenciais
- Low voltage operation (1.35V) reduces power consumption by up to 20% compared to standard DDR3 (vs AS4C256M16D3-12BCN)
- Pin-compatible with multiple cross-brand DDR3L 4Gbit parts (vs MT41K256M16HA-125)
- RoHS compliant and halogen-free (vs K4B4G1646E-BYMA)
Notas de projeto
For high-speed DDR3L routing, maintain controlled impedance of 40-50 ohms for DQ/DQS signals and 50-60 ohms for address/command signals. Keep trace lengths matched within +/- 0.5mm for each byte lane. Use ground planes beneath the memory area to reduce noise. Refer to the Alliance Memory layout guidelines in the datasheet for specific recommendations.
Decouple VDD and VDDQ with 0.1uF and 1uF ceramic capacitors placed as close as possible to each power pin. Use a bulk capacitor of 10uF near the memory. Ensure the 1.35V supply has low ripple (<50mV) and adequate current capability. The VDDQ supply should be separate or well-filtered to avoid noise coupling.
The AS4C256M16D3L-12BCN has a maximum operating temperature of 95C (Tc). For high-density systems, ensure adequate airflow or a heatsink to keep the case temperature below this limit. The FBGA package has a thermal resistance of approximately 20C/W, so power dissipation of 2W would raise the case temperature by 40C above ambient.
Informações de conformidade
RoHS compliant and halogen-free per datasheet. Not AEC-Q100 qualified.
