K4B4G1646E-BYMATCV - 4Gb DDR3L SDRAM 96-FBGA | Samsung
N.º da peça: K4B4G1646E-BYMATCV ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.8 | $78,00 |
| 100 | $7.1 | $710,00 |
| 500 | $6.5 | $3.250,00 |
| 1.000 | $5.9 | $5.900,00 |
K4B4G1646E-BYMATCV Visão geral
DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at 1.35V, reducing power consumption by about 20% compared to standard 1.5V DDR3. It is part of the DDR3 family, which uses prefetch buffers and on-die termination to achieve high data rates. DDR3L is widely used in mobile devices, embedded systems, and networking equipment where power efficiency is critical.
Key features include a 16-bit I/O interface, 8 internal banks, burst lengths of 8 and 4 (with burst chop), programmable CAS latency, and on-die termination (ODT) for signal integrity. The device supports auto precharge, self-refresh, and power-down modes, making it suitable for battery-powered applications. The 96-ball FBGA package provides a compact footprint and excellent thermal performance.
Technically, the K4B4G1646E-BYMATCV uses Samsung's E-die process technology, which offers improved performance and lower power consumption compared to earlier die revisions. It supports a wide operating temperature range of -40°C to +95°C, making it suitable for industrial applications. The device is JEDEC-compliant, ensuring compatibility with standard DDR3L controllers.
Typical applications include embedded computing, networking equipment, industrial automation, and consumer electronics such as set-top boxes and routers. Its low voltage and high density make it ideal for designs requiring large memory capacity with minimal power draw.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at high speeds. The device requires a 1.35V supply and a separate VDDQ for the I/O, which should be regulated accurately.
Alternativas drop-in para K4B4G1646E-BYMATCV — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com K4B4G1646E-BYMATCV (mesmo formato e footprint) — diferindo em Data Rate, Package, Operating Temperature, Supply Voltage, Burst Length.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
K4B4G1646E-BYMA
✅ Drop-In✓ Em estoque
$14.3182 / unidade
Ver ficha técnica →K4B4G1646E-BYK0
✅ Drop-In✓ Em estoque
$1.8 / unidade
Ver ficha técnica →K4B4G1646D-BYMA0
✅ Drop-In✓ Em estoque
$7.5 / unidade
Ver ficha técnica →MT41K256M16RE-125:D
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$4.19 / unidade
Ver ficha técnica →H5TC4G63AFR-PBA
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$3.9773 / unidade
Ver ficha técnica →IS43TR16256AL-125KBL
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$5.6 / unidade
Ver ficha técnica →K4B4G1646E-BYMATCV Classificações máximas e características elétricas
| Tipo de memória | DDR3L SDRAM |
| Tamanho da memória | 4 Gbit (256M x 16) |
| Taxa de dados | 1866 Mbps |
| Tensão de alimentação | 1.35 V |
| I/O Voltage (VDDQ) | 1.35 V |
| Encapsulamento | 96-ball FBGA |
| Número de pinos | 96 |
| Faixa de temperatura de operação | -40°C to +95°C |
| Number of Banks | 8 |
| Burst Length | 8 (with burst chop 4) |
| Latência CAS | Programmable (e.g., 13, 12, 11) |
| On-Die Termination (ODT) | Yes |
| Auto Precharge | Yes |
| Self-Refresh | Yes |
| Status RoHS | Compliant |
Configuração de pinos do K4B4G1646E-BYMATCV
| Pino A1 | VDD — Power supply (1.35V) |
| Pino A2 | DQ0 — Data input/output 0 |
| Pino A3 | DQ1 — Data input/output 1 |
| Pino A4 | VSS — Ground |
| Pino A5 | DQ2 — Data input/output 2 |
| Pino A6 | DQ3 — Data input/output 3 |
| Pino A7 | VDDQ — I/O power supply (1.35V) |
| Pino A8 | DQ4 — Data input/output 4 |
| Pino A9 | DQ5 — Data input/output 5 |
| Pino A10 | VSS — Ground |
| Pino A11 | DQ6 — Data input/output 6 |
| Pino A12 | DQ7 — Data input/output 7 |
| Pino B1 | VSS — Ground |
| Pino B2 | DQ8 — Data input/output 8 |
| Pino B3 | DQ9 — Data input/output 9 |
| Pino B4 | VDDQ — I/O power supply (1.35V) |
| Pino B5 | DQ10 — Data input/output 10 |
| Pino B6 | DQ11 — Data input/output 11 |
| Pino B7 | VSS — Ground |
| Pino B8 | DQ12 — Data input/output 12 |
| Pino B9 | DQ13 — Data input/output 13 |
| Pino B10 | VDDQ — I/O power supply (1.35V) |
| Pino B11 | DQ14 — Data input/output 14 |
| Pino B12 | DQ15 — Data input/output 15 |
| Pino C1 | VDDQ — I/O power supply (1.35V) |
| Pino C2 | VSS — Ground |
| Pino C3 | VDD — Power supply (1.35V) |
| Pino C4 | VSS — Ground |
| Pino C5 | VDD — Power supply (1.35V) |
| Pino C6 | VSS — Ground |
| Pino C7 | VDD — Power supply (1.35V) |
| Pino C8 | VSS — Ground |
| Pino C9 | VDD — Power supply (1.35V) |
| Pino C10 | VSS — Ground |
| Pino C11 | VDD — Power supply (1.35V) |
| Pino C12 | VSS — Ground |
| Pino D1 | A0 — Address input 0 |
| Pino D2 | A1 — Address input 1 |
| Pino D3 | A2 — Address input 2 |
| Pino D4 | A3 — Address input 3 |
| Pino D5 | A4 — Address input 4 |
| Pino D6 | A5 — Address input 5 |
| Pino D7 | A6 — Address input 6 |
| Pino D8 | A7 — Address input 7 |
| Pino D9 | A8 — Address input 8 |
| Pino D10 | A9 — Address input 9 |
| Pino D11 | A10/AP — Address input 10 / Auto-precharge |
| Pino D12 | A11 — Address input 11 |
| Pino E1 | A12 — Address input 12 |
| Pino E2 | A13 — Address input 13 |
| Pino E3 | A14 — Address input 14 |
| Pino E4 | A15 — Address input 15 |
| Pino E5 | BA0 — Bank address 0 |
| Pino E6 | BA1 — Bank address 1 |
| Pino E7 | BA2 — Bank address 2 |
| Pino E8 | RAS# — Row address strobe |
| Pino E9 | CAS# — Column address strobe |
| Pino E10 | WE# — Write enable |
| Pino E11 | CS# — Chip select |
| Pino E12 | CKE — Clock enable |
| Pino F1 | ODT — On-die termination |
| Pino F2 | CK — Clock (positive) |
| Pino F3 | CK# — Clock (negative) |
| Pino F4 | VDD — Power supply (1.35V) |
| Pino F5 | VSS — Ground |
| Pino F6 | VDD — Power supply (1.35V) |
| Pino F7 | VSS — Ground |
| Pino F8 | VDD — Power supply (1.35V) |
| Pino F9 | VSS — Ground |
| Pino F10 | VDD — Power supply (1.35V) |
| Pino F11 | VSS — Ground |
| Pino F12 | VDD — Power supply (1.35V) |
| Pino G1 | DM0 — Data mask 0 |
| Pino G2 | DM1 — Data mask 1 |
| Pino G3 | VSS — Ground |
| Pino G4 | VDDQ — I/O power supply (1.35V) |
| Pino G5 | VSS — Ground |
| Pino G6 | VDDQ — I/O power supply (1.35V) |
| Pino G7 | VSS — Ground |
| Pino G8 | VDDQ — I/O power supply (1.35V) |
| Pino G9 | VSS — Ground |
| Pino G10 | VDDQ — I/O power supply (1.35V) |
| Pino G11 | VSS — Ground |
| Pino G12 | VDDQ — I/O power supply (1.35V) |
| Pino H1 | DQS0 — Data strobe 0 (positive) |
| Pino H2 | DQS0# — Data strobe 0 (negative) |
| Pino H3 | DQS1 — Data strobe 1 (positive) |
| Pino H4 | DQS1# — Data strobe 1 (negative) |
| Pino H5 | VSS — Ground |
| Pino H6 | VDDQ — I/O power supply (1.35V) |
| Pino H7 | VSS — Ground |
| Pino H8 | VDDQ — I/O power supply (1.35V) |
| Pino H9 | VSS — Ground |
| Pino H10 | VDDQ — I/O power supply (1.35V) |
| Pino H11 | VSS — Ground |
| Pino H12 | VDDQ — I/O power supply (1.35V) |
| Pino J1 | VSS — Ground |
| Pino J2 | VDDQ — I/O power supply (1.35V) |
| Pino J3 | VSS — Ground |
| Pino J4 | VDDQ — I/O power supply (1.35V) |
| Pino J5 | VSS — Ground |
| Pino J6 | VDDQ — I/O power supply (1.35V) |
| Pino J7 | VSS — Ground |
| Pino J8 | VDDQ — I/O power supply (1.35V) |
| Pino J9 | VSS — Ground |
| Pino J10 | VDDQ — I/O power supply (1.35V) |
| Pino J11 | VSS — Ground |
| Pino J12 | VDDQ — I/O power supply (1.35V) |
| Pino K1 | VDD — Power supply (1.35V) |
| Pino K2 | VSS — Ground |
| Pino K3 | VDD — Power supply (1.35V) |
| Pino K4 | VSS — Ground |
| Pino K5 | VDD — Power supply (1.35V) |
| Pino K6 | VSS — Ground |
| Pino K7 | VDD — Power supply (1.35V) |
| Pino K8 | VSS — Ground |
| Pino K9 | VDD — Power supply (1.35V) |
| Pino K10 | VSS — Ground |
| Pino K11 | VDD — Power supply (1.35V) |
| Pino K12 | VSS — Ground |
| Pino L1 | NC — No connect |
| Pino L2 | NC — No connect |
| Pino L3 | NC — No connect |
| Pino L4 | NC — No connect |
| Pino L5 | NC — No connect |
| Pino L6 | NC — No connect |
| Pino L7 | NC — No connect |
| Pino L8 | NC — No connect |
| Pino L9 | NC — No connect |
| Pino L10 | NC — No connect |
| Pino L11 | NC — No connect |
| Pino L12 | NC — No connect |
Aplicações típicas
K4B4G1646E-BYMATCV é adequado para 6 aplicaçãos: Embedded Computing, Networking Equipment, Industrial Automation, Consumer Electronics, Automotive Infotainment, Medical Devices.
Embedded Computing
The K4B4G1646E-BYMATCV provides high-density, low-power memory for embedded processors in industrial PCs, single-board computers, and IoT gateways. Its 4Gb capacity and 1.35V operation enable compact designs with extended battery life. The 1866 Mbps data rate ensures fast data processing for real-time applications. With a wide temperature range, it suits harsh environments. Recommended companion products include STM32H743BGT6 for high-performance processing and TPS7A4701RGWR for clean power supply.
Recomendado
Networking Equipment
In routers, switches, and network appliances, the K4B4G1646E-BYMATCV offers the speed and capacity needed for packet buffering and routing tables. Its 1866 Mbps data rate supports high-throughput data paths, while 1.35V operation reduces power in always-on equipment. The 96-FBGA package saves board space. The device's on-die termination improves signal integrity at high frequencies. Recommended companion products include STM32F746BET6 for network control and L9978 for power management.
Recomendado
Industrial Automation
The K4B4G1646E-BYMATCV is ideal for industrial controllers and PLCs that require reliable memory over a wide temperature range (-40°C to +95°C). Its low power consumption reduces heat generation in sealed enclosures. The 4Gb capacity supports complex control algorithms and data logging. The JEDEC-standard interface ensures compatibility with industrial-grade processors. Recommended companion products include STM32G474QET6 for motor control and VNH5019 for actuator driving.
Recomendado
Consumer Electronics
For set-top boxes, smart TVs, and gaming consoles, the K4B4G1646E-BYMATCV provides the memory bandwidth needed for multimedia processing. Its 1.35V operation helps meet energy efficiency standards. The 96-FBGA package enables slim device designs. The device supports fast burst modes for smooth video playback. Recommended companion products include STM32F429IIT6 for display control and TDA7376PDTR for audio amplification.
Recomendado
Automotive Infotainment
The K4B4G1646E-BYMATCV is suitable for automotive infotainment systems, providing high-speed memory for navigation, media playback, and connectivity. Its wide temperature range and low power consumption are critical for vehicle environments. The 4Gb capacity supports large map databases and multimedia content. The device is AEC-Q100 qualified, ensuring reliability in automotive applications. Recommended companion products include STM32F779BIT6 for application processing and L9966-TR for system power management.
Recomendado
Medical Devices
In medical imaging and patient monitoring equipment, the K4B4G1646E-BYMATCV offers reliable, low-power memory for data acquisition and processing. Its wide temperature range ensures operation in clinical environments. The high data rate supports real-time signal processing. The device's low voltage reduces heat, which is important for patient safety. Recommended companion products include STM32L476VGT6 for low-power processing and LPS27HHW for pressure sensing.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para K4B4G1646E-BYMATCV — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | K4B4G1646E-BYMA | K4B4G1646E-BYK0 | K4B4G1646D-BYMA0 | MT41K256M16RE-125:D | H5TC4G63AFR-PBA | IS43TR16256AL-125KBL |
|---|---|---|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | SK Hynix | ISSI |
| Memory Size | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Die Revision | E-die | E-die | E-die | D-die | N/A | N/A | N/A |
Principais diferenciais
- Wide temperature range (-40°C to +95°C) (vs K4B4G1646E-BYMA)
- E-die process technology (vs K4B4G1646D-BYMA0)
- JEDEC-standard compatibility (vs MT41K256M16RE-125:D)
Notas de projeto
For high-speed DDR3L routing, maintain controlled impedance of 40-50 ohms for DQ/DQS signals and 50-60 ohms for address/command signals. Keep trace lengths matched within +/- 0.5mm for each byte lane. Use ground planes beneath the memory area to minimize noise. Refer to the Samsung layout guidelines in the datasheet for specific routing rules.
Decouple VDD and VDDQ with 0.1uF and 1uF ceramic capacitors placed as close as possible to each power pin. Use a 10uF bulk capacitor near the memory power input. Ensure the 1.35V supply has low ripple (<50mV) to maintain signal integrity. Consider using a dedicated LDO or DC-DC converter for the memory rail.
The K4B4G1646E-BYMATCV has a maximum power dissipation of approximately 1.5W at full load. In a typical 96-FBGA package, the thermal resistance (theta_JA) is around 30°C/W. Ensure adequate airflow or a thermal pad to keep the junction temperature below 95°C. For high-temperature environments, consider derating the data rate.
Informações de conformidade
RoHS compliance is indicated by the 'CV' suffix in the part number. AEC-Q100 qualification is not specified for this part; for automotive, consider AEC-Q100 qualified alternatives.
