H5TC4G63AFR-PBJ - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix
N.º da peça: H5TC4G63AFR-PBJ ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $10.23 | $10,23 |
| 10 | $9.5 | $95,00 |
| 100 | $8.75 | $875,00 |
| 500 | $8 | $4.000,00 |
| 1.000 | $7.5 | $7.500,00 |
H5TC4G63AFR-PBJ Visão geral
DDR3L (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory (SDRAM) that operates at 1.35V, offering a 15% power reduction compared to standard DDR3 at 1.5V. It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is widely used in laptops, servers, and embedded systems where power efficiency is critical.
Key features include a 256M x 16 organization, 96-ball TFBGA package, industrial temperature grade (-40°C to +95°C), and support for 8192 refresh cycles. The device supports auto self-refresh, data mask, auto precharge, asynchronous reset, dynamic on-chip termination (DTC), ZQ calibration, and write leveling, ensuring reliable operation in demanding environments.
The H5TC4G63AFR-PBJ uses a CMOS process and features a rectangular package shape. It is designed for high-density, high-bandwidth, and low-power applications. The industrial temperature grade allows operation in harsh conditions, making it ideal for automotive, industrial, and networking applications.
Typical applications include main memory for embedded processors, networking routers and switches, industrial PCs, and test equipment. The low voltage and high bandwidth make it suitable for power-sensitive designs.
When designing with this device, ensure proper decoupling and signal integrity practices are followed. The ZQ calibration pin requires a 240-ohm resistor to ground for optimal signal quality.
Alternativas drop-in para H5TC4G63AFR-PBJ — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com H5TC4G63AFR-PBJ (mesmo formato e footprint) — diferindo em Data Rate, Package, Burst Length, CAS Latency, Operating Temperature.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
H5TC4G63AFR-PBR
✅ Drop-In✓ Em estoque
$5.9091 / unidade
Ver ficha técnica →H5TC4G63AFR-PBA
✅ Drop-In✓ Em estoque
$3.9773 / unidade
Ver ficha técnica →H5TC4G63AFR-PBI
✅ Drop-In✓ Em estoque
$6.5 / unidade
Ver ficha técnica →H5TC4G63AFR-G7A
✅ Drop-In✓ Em estoque
$6.5 / unidade
Ver ficha técnica →H5TC4G63AFR-H9A
✅ Drop-In✓ Em estoque
$6.5 / unidade
Ver ficha técnica →K4B4G1646D-BCK00
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$5.9 / unidade
Ver ficha técnica →MT41K256M16RE-125:D
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$4.19 / unidade
Ver ficha técnica →NT5CC256M16ER-EK
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$24 / unidade
Ver ficha técnica →H5TC4G63AFR-PBJ Classificações máximas e características elétricas
| Tipo de memória | DDR3L SDRAM |
| Tamanho da memória | 4 Gb (256M x 16) |
| Tensão de alimentação | 1.35 V |
| Encapsulamento | 96-ball TFBGA |
| Temperature Grade | Industrial (-40°C to +95°C) |
| Refresh Cycles | 8192 |
| Package Shape | Rectangular |
| Number of Terminals | 96 |
| Access Time | 0.225 ns (from H5TC4G63AFR-PBR datasheet) |
| Auto Self-Refresh | Yes |
| Data Mask | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Dynamic On-Chip Termination | Yes |
| ZQ Calibration | Yes |
| Write Leveling | Yes |
Configuração de pinos do H5TC4G63AFR-PBJ
| Pino A1 | VDD — Power supply (1.35V) |
| Pino A2 | DQ0 — Data input/output 0 |
| Pino A3 | DQ1 — Data input/output 1 |
| Pino A4 | VSS — Ground |
| Pino B1 | DQ2 — Data input/output 2 |
| Pino B2 | DQ3 — Data input/output 3 |
| Pino B3 | VDDQ — I/O power supply |
| Pino B4 | DQ4 — Data input/output 4 |
| Pino C1 | DQ5 — Data input/output 5 |
| Pino C2 | DQ6 — Data input/output 6 |
| Pino C3 | DQ7 — Data input/output 7 |
| Pino C4 | VSS — Ground |
| Pino D1 | VDD — Power supply |
| Pino D2 | A0 — Address input 0 |
| Pino D3 | A1 — Address input 1 |
| Pino D4 | A2 — Address input 2 |
| Pino E1 | A3 — Address input 3 |
| Pino E2 | A4 — Address input 4 |
| Pino E3 | A5 — Address input 5 |
| Pino E4 | A6 — Address input 6 |
| Pino F1 | A7 — Address input 7 |
| Pino F2 | A8 — Address input 8 |
| Pino F3 | A9 — Address input 9 |
| Pino F4 | A10/AP — Address input 10 / Auto-precharge |
| Pino G1 | A11 — Address input 11 |
| Pino G2 | A12 — Address input 12 |
| Pino G3 | A13 — Address input 13 |
| Pino G4 | A14 — Address input 14 |
| Pino H1 | BA0 — Bank address 0 |
| Pino H2 | BA1 — Bank address 1 |
| Pino H3 | BA2 — Bank address 2 |
| Pino H4 | VSS — Ground |
| Pino J1 | CK — Clock input |
| Pino J2 | CK# — Complementary clock input |
| Pino J3 | CKE — Clock enable |
| Pino J4 | CS# — Chip select |
| Pino K1 | RAS# — Row address strobe |
| Pino K2 | CAS# — Column address strobe |
| Pino K3 | WE# — Write enable |
| Pino K4 | ODT — On-die termination |
| Pino L1 | DM0 — Data mask 0 |
| Pino L2 | DM1 — Data mask 1 |
| Pino L3 | ZQ — ZQ calibration (240-ohm resistor to ground) |
| Pino L4 | VDD — Power supply |
Aplicações típicas
H5TC4G63AFR-PBJ é adequado para 6 aplicaçãos: Embedded Processors, Networking Equipment, Industrial PCs, Test and Measurement, Automotive Infotainment, Medical Devices.
Embedded Processors
The H5TC4G63AFR-PBJ provides 4Gb DDR3L memory for embedded processors, offering high bandwidth and low power at 1.35V. Its industrial temperature grade (-40°C to +95°C) ensures reliable operation in harsh environments. The 256M x 16 organization supports 16-bit data bus widths, ideal for SoCs and FPGAs. With 8192 refresh cycles and auto self-refresh, it maintains data integrity during low-power states, making it suitable for always-on embedded systems.
Recomendado
Networking Equipment
In networking routers and switches, the H5TC4G63AFR-PBJ delivers high-bandwidth memory for packet buffering and forwarding tables. Its 1.35V operation reduces power consumption in 24/7 operation, while the industrial temperature grade supports outdoor and industrial networking gear. The 96-ball TFBGA package enables compact PCB layouts, and features like dynamic on-chip termination and write leveling improve signal integrity at high speeds, ensuring reliable data transmission.
Recomendado
Industrial PCs
Industrial PCs require robust memory that can withstand temperature fluctuations and vibration. The H5TC4G63AFR-PBJ's industrial temperature grade (-40°C to +95°C) and 96-ball TFBGA package provide durability. Its 4Gb density supports multitasking and data logging, while 1.35V operation reduces heat generation. Features like auto precharge and data mask enhance memory efficiency, making it ideal for factory automation and process control systems.
Recomendado
Test and Measurement
Test equipment such as oscilloscopes and logic analyzers require high-speed data acquisition and storage. The H5TC4G63AFR-PBJ offers high bandwidth and low latency, enabling fast waveform capture. Its 1.35V low-power operation is beneficial for portable instruments. The industrial temperature grade ensures accuracy in varying lab conditions. With 8192 refresh cycles and auto self-refresh, it maintains data integrity during long captures, making it a reliable choice for precision measurement.
Recomendado
Automotive Infotainment
In automotive infotainment systems, the H5TC4G63AFR-PBJ provides high-bandwidth memory for navigation, multimedia, and instrument clusters. Its industrial temperature grade supports under-hood and cabin environments. The 1.35V operation reduces power draw from the vehicle battery. Features like dynamic on-chip termination and write leveling ensure signal integrity in noisy automotive environments. The 96-ball TFBGA package withstands vibration, making it suitable for in-vehicle electronics.
Recomendado
Medical Devices
Medical devices such as patient monitors and diagnostic equipment require reliable, high-capacity memory. The H5TC4G63AFR-PBJ's industrial temperature grade ensures operation in clinical environments. Its 4Gb density supports complex algorithms and data logging. The 1.35V low-power operation is critical for battery-powered portable devices. Features like auto self-refresh and data mask enhance data integrity, making it suitable for life-critical applications where memory reliability is paramount.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para H5TC4G63AFR-PBJ — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | H5TC4G63AFR-PBR | H5TC4G63AFR-PBA | K4B4G1646D-BCK00 | MT41K256M16RE-125:D |
|---|---|---|---|---|---|
| Package | 96-ball TFBGA | 96-ball TFBGA | 96-ball TFBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | SK Hynix | SK Hynix | SK Hynix | Samsung | Micron |
| Memory Size | 4 Gb | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Temperature Grade | Industrial (-40°C to +95°C) | Industrial (-40°C to +95°C) | Commercial (0°C to +95°C) | Commercial (0°C to +95°C) | Commercial (0°C to +95°C) |
| Refresh Cycles | 8192 | 8192 | 8192 | 8192 | 8192 |
Principais diferenciais
- Industrial temperature grade (-40°C to +95°C) (vs K4B4G1646D-BCK00)
- Same-brand drop-in variants with different speed grades (vs H5TC4G63AFR-PBA)
- Cross-brand availability from Samsung and Micron (vs K4B4G1646D-BCK00)
Notas de projeto
For optimal signal integrity, route DDR3L traces with controlled impedance (typically 40-60 ohms single-ended, 80-120 ohms differential). Keep trace lengths matched within 50 mils for address/control and 20 mils for data. Place the ZQ pin's 240-ohm resistor (1% tolerance) as close to the ball as possible, with a clean ground return. Use a solid ground plane beneath the memory device to minimize noise.
Decouple the VDD and VDDQ pins with 0.1uF and 1uF ceramic capacitors placed within 100 mils of each ball. Use a 10uF bulk capacitor near the memory power input. The 1.35V supply should have low ripple (<50mV) to ensure reliable operation. Consider using a dedicated DDR3L power regulator with good transient response.
The industrial temperature grade allows operation up to +95°C, but ensure adequate airflow or heatsinking if the device is in a confined enclosure. The 96-ball TFBGA package has a thermal resistance that depends on PCB copper area; provide at least 4 thermal vias under the exposed pad to improve heat dissipation. Monitor junction temperature to stay within the specified range.
Informações de conformidade
Compliance information not explicitly provided in the verified data. Check the manufacturer datasheet or contact SK Hynix for RoHS/REACH status.
