NT5CC256M16ER-EKI - 4Gb DDR3L SDRAM 256Mx16 | Nanya
N.º da peça: NT5CC256M16ER-EKI ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $28.6364 | $28,64 |
| 10 | $20.6818 | $206,82 |
| 100 | $18.2955 | $1.829,55 |
| 500 | $17.5 | $8.750,00 |
| 1.000 | $16.7045 | $16.704,50 |
NT5CC256M16ER-EKI Visão geral
DDR3L SDRAM is a type of double data rate synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high bandwidth. It is part of the memory hierarchy in computing systems, serving as the main system memory for processors, and is widely used in embedded systems, networking equipment, and industrial PCs.
Key features include a 4Gb density, 16-bit data bus, 1.35V core voltage, and support for industrial temperature range. The device uses an 8n-prefetch architecture and supports burst lengths of 8 and 4 (with burst chop). It also features on-die termination (ODT) for improved signal integrity and a programmable CAS latency. The TFBGA-96 package provides a compact footprint suitable for space-constrained designs.
Technically, the NT5CC256M16ER-EKI is fabricated using Nanya's advanced DRAM process technology, offering high reliability and low power consumption. The device includes a mode register set (MRS) for configuration, and supports DLL (delay-locked loop) for precise timing. It is compliant with JEDEC DDR3L standards, ensuring interoperability with a wide range of controllers.
Typical applications include industrial computing, networking routers and switches, embedded systems, and automotive infotainment. Its industrial temperature rating makes it suitable for harsh environments. The low voltage operation is ideal for battery-powered and energy-efficient designs.
When designing with this component, ensure proper decoupling capacitors near the power pins and follow the PCB layout guidelines in the datasheet to minimize signal integrity issues. Also, verify the memory controller supports 1.35V operation for optimal performance.
Alternativas drop-in para NT5CC256M16ER-EKI — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com NT5CC256M16ER-EKI (mesmo formato e footprint) — diferindo em Package, Supply Voltage, Burst Length, Data Rate, CAS Latency.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
NT5CC256M16ER-EK
✓ Em estoque
$24 / unidade
Ver ficha técnica →MT41K256M16HA-125
✓ Em estoque
$6.3636 / unidade
Ver ficha técnica →K4B4G1646F-BYMA
✓ Em estoque
$6.3 / unidade
Ver ficha técnica →H5TQ1G83AFR
📋 Alternativa de referência (fora do catálogo)
AS4C256M16D3LC-10BCN
📋 Alternativa de referência (fora do catálogo)
NT5CC256M16ER-EKI Classificações máximas e características elétricas
| Tipo de memória | DDR3L SDRAM |
| Density | 4 Gbit |
| Organização da memória | 256M x 16 |
| Tensão de alimentação | 1.35 V (1.5 V compatible) |
| Taxa de dados | 933 MHz (DDR3L-1866) |
| Encapsulamento | 96-ball TFBGA |
| Temperatura de operação | -40°C to +95°C |
| Auto Self-Refresh | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Write Leveling | Yes |
| Dynamic On-Chip Termination | Yes |
| ZQ Calibration | Yes |
| RoHS | Compliant |
| Tipo de montagem | Surface Mount |
Configuração de pinos do NT5CC256M16ER-EKI
| Pino A1 | VDD — Power supply |
| Pino A2 | DQ0 — Data input/output 0 |
| Pino A3 | DQ1 — Data input/output 1 |
| Pino A4 | VSS — Ground |
| Pino A5 | DQ2 — Data input/output 2 |
| Pino A6 | DQ3 — Data input/output 3 |
| Pino A7 | VDD — Power supply |
| Pino A8 | DQ4 — Data input/output 4 |
| Pino A9 | DQ5 — Data input/output 5 |
| Pino A10 | VSS — Ground |
| Pino A11 | DQ6 — Data input/output 6 |
| Pino A12 | DQ7 — Data input/output 7 |
| Pino B1 | VSS — Ground |
| Pino B2 | DQ8 — Data input/output 8 |
| Pino B3 | DQ9 — Data input/output 9 |
| Pino B4 | VDD — Power supply |
| Pino B5 | DQ10 — Data input/output 10 |
| Pino B6 | DQ11 — Data input/output 11 |
| Pino B7 | VSS — Ground |
| Pino B8 | DQ12 — Data input/output 12 |
| Pino B9 | DQ13 — Data input/output 13 |
| Pino B10 | VDD — Power supply |
| Pino B11 | DQ14 — Data input/output 14 |
| Pino B12 | DQ15 — Data input/output 15 |
Aplicações típicas
NT5CC256M16ER-EKI é adequado para 6 aplicaçãos: Industrial Computing, Networking Equipment, Automotive Infotainment, Embedded Systems, Data Storage Systems, Test and Measurement.
Industrial Computing
The NT5CC256M16ER-EKI is ideal for industrial PCs and embedded systems that require reliable memory operation in harsh environments. Its industrial temperature range (-40°C to +95°C) ensures stable performance in factories and outdoor installations. The 4Gb density and 16-bit bus provide sufficient capacity for operating systems and applications, while the low 1.35V operation reduces power consumption and heat generation, which is critical in sealed enclosures. The DDR3L interface is widely supported by industrial processors from Intel and AMD, making integration straightforward.
Recomendado
Networking Equipment
In networking routers, switches, and firewalls, the NT5CC256M16ER-EKI provides high-bandwidth memory for packet buffering and routing tables. The 933MHz data rate supports line-rate processing, while the 4Gb density accommodates large forwarding databases. The auto self-refresh feature reduces power in idle states, which is important for energy-efficient network devices. The 96-ball TFBGA package allows compact PCB layouts, enabling high port density. Its industrial temperature rating ensures reliability in telecom cabinets with limited cooling.
Recomendado
Automotive Infotainment
The NT5CC256M16ER-EKI is suitable for automotive infotainment systems, providing memory for navigation, multimedia, and instrument clusters. Its wide temperature range (-40°C to +95°C) meets automotive requirements, and the 1.35V operation reduces power draw from the vehicle's electrical system. The DDR3L interface is compatible with automotive SoCs from NXP and Renesas. The 4Gb density supports complex UI graphics and audio/video playback. The device's robustness and long-term availability make it a reliable choice for automotive applications.
Recomendado
Embedded Systems
For general embedded systems, the NT5CC256M16ER-EKI offers a balance of capacity, speed, and power efficiency. Its 4Gb density is suitable for applications like medical devices, test equipment, and robotics. The 1.35V operation is ideal for battery-powered devices, extending operational life. The 96-ball TFBGA package is compact, fitting into space-constrained designs. The device supports standard DDR3L features like write leveling and ODT, simplifying PCB design. Its industrial temperature range allows use in outdoor and extreme environments.
Recomendado
Data Storage Systems
In NAS, SAN, and server systems, the NT5CC256M16ER-EKI provides high-speed memory for caching and metadata management. The 933MHz data rate ensures fast I/O processing, while the 4Gb density supports large cache pools. The low 1.35V operation reduces power consumption in data centers, contributing to energy savings. The device's reliability and industrial temperature range make it suitable for 24/7 operation. The 16-bit bus width allows easy integration with storage controllers and SoCs.
Recomendado
Test and Measurement
The NT5CC256M16ER-EKI is used in oscilloscopes, logic analyzers, and signal generators for data acquisition and processing. Its high bandwidth (933MHz) enables fast sampling and real-time analysis. The 4Gb density provides ample buffer for waveform storage. The industrial temperature range ensures accuracy in lab and field environments. The 1.35V operation reduces heat, improving instrument stability. The device's compatibility with standard DDR3L controllers simplifies design in custom test equipment.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para NT5CC256M16ER-EKI — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | NT5CC256M16ER-EK | MT41K256M16HA-125 | K4B4G1646F | H5TQ1G83AFR |
|---|---|---|---|---|---|
| Package | 96-ball TFBGA | 96-ball TFBGA | 96-ball TFBGA | 96-ball TFBGA | 96-ball TFBGA |
| Brand | Nanya Technology | Nanya Technology | Micron Technology | Samsung Electronics | SK Hynix |
| Density | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V (1.5V compatible) | 1.35V | 1.35V | 1.35V | 1.35V |
| Data Rate | 933 MHz | 933 MHz | 933 MHz | 933 MHz | 933 MHz |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant |
Principais diferenciais
- Industrial temperature range (vs MT41K256M16HA-125)
- Low voltage operation (vs K4B4G1646F)
- Same-brand drop-in (vs NT5CC256M16ER-EK)
Notas de projeto
Ensure proper decoupling capacitors (0.1uF and 1uF) are placed close to each VDD and VDDQ pin to minimize power supply noise. Follow the layout guidelines in the Nanya datasheet for trace impedance matching (typically 50 ohms for data lines) and length matching for DQ, DQS, and address/control signals to ensure signal integrity at 933MHz.
The NT5CC256M16ER-EKI operates over -40°C to +95°C. In high-temperature environments, ensure adequate airflow or heatsinking to keep the junction temperature within limits. The 1.35V operation reduces power dissipation compared to 1.5V DDR3, but still consider the thermal resistance of the TFBGA package and provide thermal vias under the package if needed.
Verify that the memory controller supports 1.35V DDR3L operation. Some controllers may only support 1.5V DDR3, which could cause compatibility issues. Also, ensure the ZQ calibration resistor (240 ohm ±1%) is connected to the ZQ pin, and that the ODT settings are correctly programmed in the mode registers to match the system topology.
Informações de conformidade
RoHS compliant per LCSC and JLCPCB listings. REACH and conflict minerals status not specified in provided data.
