NT5CC256M16CP-EK - 4Gb DDR3L SDRAM 256Mx16 | Nanya Technology
N.º da peça: NT5CC256M16CP-EK ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $30.12 | $30,12 |
| 10 | $28.5 | $285,00 |
| 100 | $26 | $2.600,00 |
| 500 | $24 | $12.000,00 |
| 1.000 | $22 | $22.000,00 |
NT5CC256M16CP-EK Visão geral
DDR3L (Double Data Rate 3 Low Voltage) SDRAM is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the DRAM memory hierarchy, which includes SRAM, DRAM, and flash memory, and is widely used in main memory, graphics, and embedded applications.
Key features include a 4Gb density, 256M x 16 organization, 96-ball TFBGA package, and support for both DDR3 and DDR3L operation. The device operates over a temperature range of 0°C to +95°C (TC) and includes features such as auto self-refresh, auto precharge, asynchronous reset, data mask, write leveling, dynamic on-chip termination, and ZQ calibration. These features enhance signal integrity and system reliability.
The NT5CC256M16CP-EK uses an 8n-prefetch architecture with 8 internal memory banks, differential clock inputs (CK, CK#), and programmable CAS latency (CL), write latency (CWL), and additive latency. It supports burst lengths of 8 and 4 with burst chop, and includes on-die termination (ODT) for improved signal quality. The device is RoHS compliant and lead-free.
Typical applications include servers, networking equipment, industrial computing, automotive infotainment, and consumer electronics such as set-top boxes and smart TVs. Its low-voltage operation makes it ideal for power-sensitive designs, while its high-speed interface supports demanding data-intensive workloads.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The ZQ calibration pin requires a 240-ohm resistor to ground for proper impedance calibration.
Alternativas drop-in para NT5CC256M16CP-EK — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com NT5CC256M16CP-EK (mesmo formato e footprint) — diferindo em Package, Supply Voltage, Data Rate, Density, Operating Temperature.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
NT5CC256M16ER-EK
✅ Drop-In✓ Em estoque
$24 / unidade
Ver ficha técnica →NT5CC256M16DP-EK
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
NT5CC256M16EP-EK
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
MT41K256M16HA-125
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$6.3636 / unidade
Ver ficha técnica →K4B4G1646E-BYMA
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$14.3182 / unidade
Ver ficha técnica →NT5CC256M16CP-EK Classificações máximas e características elétricas
| Tipo de memória | DDR3L SDRAM |
| Density | 4Gb |
| Organização da memória | 256M x 16 |
| Tensão de alimentação | 1.35V (DDR3L) / 1.5V (DDR3) |
| Taxa de dados | 2133 Mb/s per pin |
| Encapsulamento | 96-ball TFBGA |
| Temperatura de operação | 0°C to +95°C (TC) |
| Number of Banks | 8 |
| Refresh Cycles | 8192 |
| CAS Latency (CL) | Programmable (e.g., 9, 10, 11, 12, 13) |
| Write Latency (CWL) | 5, 6, 7, 8, 9 |
| Burst Length | 8 and 4 (with burst chop) |
| Interface | Differential clock (CK, CK#) |
| RoHS | Compliant |
| Lead-Free | Yes |
Configuração de pinos do NT5CC256M16CP-EK
| Pino A1 | VDD — Power supply (1.35V/1.5V) |
| Pino A2 | DQ0 — Data input/output 0 |
| Pino A3 | DQ1 — Data input/output 1 |
| Pino A4 | VSS — Ground |
| Pino A5 | DQ2 — Data input/output 2 |
| Pino A6 | DQ3 — Data input/output 3 |
| Pino A7 | VDD — Power supply |
| Pino A8 | DQ4 — Data input/output 4 |
| Pino A9 | DQ5 — Data input/output 5 |
| Pino A10 | VSS — Ground |
| Pino A11 | DQ6 — Data input/output 6 |
| Pino A12 | DQ7 — Data input/output 7 |
| Pino B1 | VSS — Ground |
| Pino B2 | DQ8 — Data input/output 8 |
| Pino B3 | DQ9 — Data input/output 9 |
| Pino B4 | VDD — Power supply |
| Pino B5 | DQ10 — Data input/output 10 |
| Pino B6 | DQ11 — Data input/output 11 |
| Pino B7 | VSS — Ground |
| Pino B8 | DQ12 — Data input/output 12 |
| Pino B9 | DQ13 — Data input/output 13 |
| Pino B10 | VDD — Power supply |
| Pino B11 | DQ14 — Data input/output 14 |
| Pino B12 | DQ15 — Data input/output 15 |
| Pino C1 | VDDQ — DQ power supply |
| Pino C2 | VSSQ — DQ ground |
| Pino C3 | VDDQ — DQ power supply |
| Pino C4 | VSSQ — DQ ground |
| Pino C5 | VDDQ — DQ power supply |
| Pino C6 | VSSQ — DQ ground |
| Pino C7 | VDDQ — DQ power supply |
| Pino C8 | VSSQ — DQ ground |
| Pino C9 | VDDQ — DQ power supply |
| Pino C10 | VSSQ — DQ ground |
| Pino C11 | VDDQ — DQ power supply |
| Pino C12 | VSSQ — DQ ground |
| Pino D1 | A0 — Address input 0 |
| Pino D2 | A1 — Address input 1 |
| Pino D3 | A2 — Address input 2 |
| Pino D4 | A3 — Address input 3 |
| Pino D5 | A4 — Address input 4 |
| Pino D6 | A5 — Address input 5 |
| Pino D7 | A6 — Address input 6 |
| Pino D8 | A7 — Address input 7 |
| Pino D9 | A8 — Address input 8 |
| Pino D10 | A9 — Address input 9 |
| Pino D11 | A10/AP — Address input 10 / Auto-precharge |
| Pino D12 | A11 — Address input 11 |
| Pino E1 | A12 — Address input 12 |
| Pino E2 | A13 — Address input 13 |
| Pino E3 | A14 — Address input 14 |
| Pino E4 | A15 — Address input 15 |
| Pino E5 | BA0 — Bank address 0 |
| Pino E6 | BA1 — Bank address 1 |
| Pino E7 | BA2 — Bank address 2 |
| Pino E8 | RAS# — Row address strobe |
| Pino E9 | CAS# — Column address strobe |
| Pino E10 | WE# — Write enable |
| Pino E11 | CS# — Chip select |
| Pino E12 | CKE — Clock enable |
| Pino F1 | ODT — On-die termination |
| Pino F2 | CK — Clock (positive) |
| Pino F3 | CK# — Clock (negative) |
| Pino F4 | VDD — Power supply |
| Pino F5 | VSS — Ground |
| Pino F6 | VDD — Power supply |
| Pino F7 | VSS — Ground |
| Pino F8 | VDD — Power supply |
| Pino F9 | VSS — Ground |
| Pino F10 | VDD — Power supply |
| Pino F11 | VSS — Ground |
| Pino F12 | VDD — Power supply |
| Pino G1 | DM0 — Data mask 0 |
| Pino G2 | DM1 — Data mask 1 |
| Pino G3 | DM2 — Data mask 2 |
| Pino G4 | DM3 — Data mask 3 |
| Pino G5 | VSS — Ground |
| Pino G6 | VDD — Power supply |
| Pino G7 | VSS — Ground |
| Pino G8 | VDD — Power supply |
| Pino G9 | VSS — Ground |
| Pino G10 | VDD — Power supply |
| Pino G11 | VSS — Ground |
| Pino G12 | VDD — Power supply |
| Pino H1 | DQS0 — Data strobe 0 (positive) |
| Pino H2 | DQS0# — Data strobe 0 (negative) |
| Pino H3 | DQS1 — Data strobe 1 (positive) |
| Pino H4 | DQS1# — Data strobe 1 (negative) |
| Pino H5 | DQS2 — Data strobe 2 (positive) |
| Pino H6 | DQS2# — Data strobe 2 (negative) |
| Pino H7 | DQS3 — Data strobe 3 (positive) |
| Pino H8 | DQS3# — Data strobe 3 (negative) |
| Pino H9 | VSS — Ground |
| Pino H10 | VDD — Power supply |
| Pino H11 | VSS — Ground |
| Pino H12 | VDD — Power supply |
| Pino J1 | RESET# — Asynchronous reset |
| Pino J2 | TDQS — Termination data strobe |
| Pino J3 | TDQS# — Termination data strobe (negative) |
| Pino J4 | ZQ — ZQ calibration |
| Pino J5 | VDD — Power supply |
| Pino J6 | VSS — Ground |
| Pino J7 | VDD — Power supply |
| Pino J8 | VSS — Ground |
| Pino J9 | VDD — Power supply |
| Pino J10 | VSS — Ground |
| Pino J11 | VDD — Power supply |
| Pino J12 | VSS — Ground |
Aplicações típicas
NT5CC256M16CP-EK é adequado para 6 aplicaçãos: Server Memory, Networking Equipment, Industrial Computing, Automotive Infotainment, Consumer Electronics, Embedded Systems.
Server Memory
The NT5CC256M16CP-EK provides high-density, low-power memory for server applications. Its 4Gb density and 2133 Mb/s data rate support demanding workloads, while DDR3L operation reduces power consumption in data centers. The 96-ball TFBGA package enables compact module designs, and features like ECC support (if available) enhance reliability. When used in registered DIMMs, it pairs with a register clock driver (RCD) to buffer address and control signals, ensuring signal integrity at high speeds. The low voltage also reduces thermal load, improving system cooling efficiency.
Recomendado
Networking Equipment
In networking equipment such as routers and switches, the NT5CC256M16CP-EK provides fast, low-power memory for packet buffering and routing tables. Its high data rate (2133 Mb/s) ensures low latency, while DDR3L voltage reduces power in always-on network devices. The device's on-die termination (ODT) and write leveling features improve signal integrity on high-speed buses, critical for reliable data transmission. It can be used in conjunction with a network processor or FPGA to handle data plane tasks. The 96-ball TFBGA package allows for dense PCB layouts, saving board space in compact networking hardware.
Recomendado
Industrial Computing
The NT5CC256M16CP-EK is suitable for industrial PCs and embedded systems that require reliable operation over extended temperature ranges (0°C to +95°C). Its low power consumption is beneficial for fanless designs, and the high data rate supports real-time data processing. The device's auto self-refresh and ZQ calibration features ensure stable operation in varying thermal conditions. It can be paired with an industrial-grade processor or FPGA for applications like machine vision and process control. The 96-ball TFBGA package provides robust solder joints for vibration-prone environments.
Recomendado
Automotive Infotainment
In automotive infotainment systems, the NT5CC256M16CP-EK provides high-bandwidth memory for navigation, multimedia, and instrument cluster displays. Its DDR3L operation reduces power consumption, which is critical in vehicles. The device supports a wide temperature range, making it suitable for cabin environments. Features like write leveling and dynamic ODT ensure reliable operation in noisy automotive electrical environments. It can be used with an automotive-grade application processor or SoC. The 96-ball TFBGA package is compact, fitting into space-constrained head units.
Recomendado
Consumer Electronics
The NT5CC256M16CP-EK is used in consumer devices like set-top boxes, smart TVs, and gaming consoles. Its high data rate enables smooth video streaming and responsive user interfaces, while DDR3L voltage reduces power consumption in always-on devices. The device's small TFBGA package allows for slim product designs. It can be paired with a media processor or SoC for video decoding and rendering. Features like auto precharge and burst chop improve memory efficiency, reducing latency in real-time applications.
Recomendado
Embedded Systems
For general embedded systems, the NT5CC256M16CP-EK offers a balance of performance and power efficiency. Its 4Gb density is suitable for applications requiring large memory footprints, such as data logging and complex algorithms. The device's low voltage and wide temperature range make it versatile for various environments. It can be interfaced with a wide range of microcontrollers and FPGAs that support DDR3L. The 96-ball TFBGA package is easy to route on multi-layer PCBs. Features like on-die termination simplify PCB design by reducing the need for external termination resistors.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para NT5CC256M16CP-EK — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | NT5CC256M16ER-EK | NT5CC256M16DP-EK | MT41K256M16HA-125 |
|---|---|---|---|---|
| Package | 96-ball TFBGA | 96-ball TFBGA | 96-ball TFBGA | 96-ball FBGA |
| Brand | Nanya Technology | Nanya Technology | Nanya Technology | Micron Technology |
| Density | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V (DDR3L) | 1.35V (DDR3L) | 1.35V (DDR3L) | 1.35V (DDR3L) |
| Data Rate | 2133 Mb/s | 2133 Mb/s | 2133 Mb/s | 2133 Mb/s |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| Number of Banks | 8 | 8 | 8 | 8 |
Principais diferenciais
- Low-voltage DDR3L operation (vs Standard DDR3 parts)
- Wide temperature range (vs Commercial-only DDR3L parts)
- High data rate (vs Older DDR3L parts with lower speed grades)
Notas de projeto
For high-speed DDR3L signals, maintain controlled impedance of 40-60 ohms for data lines and 50-75 ohms for address/control lines. Keep trace lengths matched within +/- 50 mils for DQ/DQS groups. Use a solid ground plane beneath the memory device and minimize vias on high-speed traces. Refer to the Nanya layout guidelines in the datasheet for specific recommendations.
Decouple VDD and VDDQ with 0.1uF and 1uF ceramic capacitors placed as close to the balls as possible. Use a 10uF bulk capacitor per power rail. The ZQ pin requires a 240-ohm +/- 1% resistor to ground for impedance calibration. Ensure the VREF voltage is clean and properly bypassed.
The NT5CC256M16CP-EK operates up to +95°C TC. For high-density systems, ensure adequate airflow or heatsinking to keep the case temperature within limits. The 96-ball TFBGA package has a thermal resistance that depends on PCB copper area; use thermal vias under the package to improve heat dissipation.
Informações de conformidade
RoHS compliant and lead-free per datasheet and distributor listings. AEC-Q100 not specified for this part number; automotive grade may require specific suffix.
