NT5CC256M16ER-EK - 4Gb DDR3L SDRAM 256Mx16 | Nanya
N.º da peça: NT5CC256M16ER-EK ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $30.12 | $30,12 |
| 10 | $28.5 | $285,00 |
| 100 | $26.8 | $2.680,00 |
| 500 | $25.2 | $12.600,00 |
| 1.000 | $24 | $24.000,00 |
NT5CC256M16ER-EK Visão geral
DDR3L (Double Data Rate 3 Low Voltage) SDRAM is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high bandwidth. It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, and is widely used in laptops, servers, and industrial applications where energy efficiency is critical.
Key features include a 4Gb density, 16-bit I/O width, 933MHz clock speed, and support for 1.35V operation. The device also features programmable CAS latency, burst lengths of 8 and 4 (with burst chop), and on-die termination (ODT) for improved signal integrity. The TFBGA-96 package offers a compact footprint suitable for space-constrained designs.
Technically, the NT5CC256M16ER-EK uses an 8n-prefetch architecture, achieving high data rates with low power. It includes a mode register for configuration, and supports DLL (Delay-Locked Loop) for precise timing. The device is RoHS compliant and lead-free, meeting environmental standards.
Typical applications include DDR3L memory modules for laptops, embedded systems, networking equipment, and industrial PCs. Its low voltage and high density make it ideal for power-sensitive applications.
When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at high speeds.
Alternativas drop-in para NT5CC256M16ER-EK — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com NT5CC256M16ER-EK (mesmo formato e footprint) — diferindo em Supply Voltage, Data Rate, CAS Latency, Package, Density.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
NT5CC256M16ER-EKI
✅ Drop-In✓ Em estoque
$16.7045 / unidade
Ver ficha técnica →MT41K256M16TW-107:P
✅ Drop-In✓ Em estoque
$16 / unidade
Ver ficha técnica →AS4C256M16D3LC-10BCN
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IS43TR16512B-107MBL
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
K4B4G1646E-HCK0
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
H5TQ2G83AFR-PBC
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
NT5CC256M16ER-EK Classificações máximas e características elétricas
| Tipo de memória | DDR3L SDRAM |
| Density | 4 Gbit |
| Organização da memória | 256M x 16 |
| Tensão de alimentação | 1.35 V |
| Taxa de dados | 933 MHz (DDR3L-1866) |
| Encapsulamento | TFBGA-96 |
| Temperatura de operação | 0°C to +95°C |
| Burst Length | 8, 4 (with burst chop) |
| Interface | Parallel |
| Tipo de montagem | Surface Mount |
| Status RoHS | Compliant |
| Lead-Free | Yes |
| Auto Self-Refresh | Yes |
| Write Leveling | Yes |
| Dynamic ODT | Yes |
| ZQ Calibration | Yes |
Configuração de pinos do NT5CC256M16ER-EK
| Pino A1 | VDD — Power supply |
| Pino A2 | DQ0 — Data input/output 0 |
| Pino A3 | DQ1 — Data input/output 1 |
| Pino A4 | VSS — Ground |
| Pino A5 | DQ2 — Data input/output 2 |
| Pino A6 | DQ3 — Data input/output 3 |
| Pino A7 | VDD — Power supply |
| Pino A8 | DQ4 — Data input/output 4 |
| Pino A9 | DQ5 — Data input/output 5 |
| Pino A10 | VSS — Ground |
| Pino A11 | DQ6 — Data input/output 6 |
| Pino A12 | DQ7 — Data input/output 7 |
| Pino B1 | VDD — Power supply |
| Pino B2 | DQ8 — Data input/output 8 |
| Pino B3 | DQ9 — Data input/output 9 |
| Pino B4 | VSS — Ground |
| Pino B5 | DQ10 — Data input/output 10 |
| Pino B6 | DQ11 — Data input/output 11 |
| Pino B7 | VDD — Power supply |
| Pino B8 | DQ12 — Data input/output 12 |
| Pino B9 | DQ13 — Data input/output 13 |
| Pino B10 | VSS — Ground |
| Pino B11 | DQ14 — Data input/output 14 |
| Pino B12 | DQ15 — Data input/output 15 |
| Pino C1 | VDD — Power supply |
| Pino C2 | DQS0 — Data strobe 0 |
| Pino C3 | DQS0# — Data strobe 0 complement |
| Pino C4 | VSS — Ground |
| Pino C5 | DQS1 — Data strobe 1 |
| Pino C6 | DQS1# — Data strobe 1 complement |
| Pino C7 | VDD — Power supply |
| Pino C8 | DQS2 — Data strobe 2 |
| Pino C9 | DQS2# — Data strobe 2 complement |
| Pino C10 | VSS — Ground |
| Pino C11 | DQS3 — Data strobe 3 |
| Pino C12 | DQS3# — Data strobe 3 complement |
| Pino D1 | VDD — Power supply |
| Pino D2 | A0 — Address input 0 |
| Pino D3 | A1 — Address input 1 |
| Pino D4 | VSS — Ground |
| Pino D5 | A2 — Address input 2 |
| Pino D6 | A3 — Address input 3 |
| Pino D7 | VDD — Power supply |
| Pino D8 | A4 — Address input 4 |
| Pino D9 | A5 — Address input 5 |
| Pino D10 | VSS — Ground |
| Pino D11 | A6 — Address input 6 |
| Pino D12 | A7 — Address input 7 |
| Pino E1 | VDD — Power supply |
| Pino E2 | A8 — Address input 8 |
| Pino E3 | A9 — Address input 9 |
| Pino E4 | VSS — Ground |
| Pino E5 | A10/AP — Address input 10 / Auto precharge |
| Pino E6 | A11 — Address input 11 |
| Pino E7 | VDD — Power supply |
| Pino E8 | A12 — Address input 12 |
| Pino E9 | A13 — Address input 13 |
| Pino E10 | VSS — Ground |
| Pino E11 | A14 — Address input 14 |
| Pino E12 | A15 — Address input 15 |
| Pino F1 | VDD — Power supply |
| Pino F2 | BA0 — Bank address 0 |
| Pino F3 | BA1 — Bank address 1 |
| Pino F4 | VSS — Ground |
| Pino F5 | BA2 — Bank address 2 |
| Pino F6 | RAS# — Row address strobe |
| Pino F7 | VDD — Power supply |
| Pino F8 | CAS# — Column address strobe |
| Pino F9 | WE# — Write enable |
| Pino F10 | VSS — Ground |
| Pino F11 | CS# — Chip select |
| Pino F12 | CKE — Clock enable |
| Pino G1 | VDD — Power supply |
| Pino G2 | ODT — On-die termination |
| Pino G3 | CK — Clock |
| Pino G4 | VSS — Ground |
| Pino G5 | CK# — Clock complement |
| Pino G6 | RESET# — Reset |
| Pino G7 | VDD — Power supply |
| Pino G8 | DM0 — Data mask 0 |
| Pino G9 | DM1 — Data mask 1 |
| Pino G10 | VSS — Ground |
| Pino G11 | DM2 — Data mask 2 |
| Pino G12 | DM3 — Data mask 3 |
| Pino H1 | VDD — Power supply |
| Pino H2 | VDDQ — DQ power supply |
| Pino H3 | VSSQ — DQ ground |
| Pino H4 | VSS — Ground |
| Pino H5 | VDDQ — DQ power supply |
| Pino H6 | VSSQ — DQ ground |
| Pino H7 | VDD — Power supply |
| Pino H8 | VDDQ — DQ power supply |
| Pino H9 | VSSQ — DQ ground |
| Pino H10 | VSS — Ground |
| Pino H11 | VDDQ — DQ power supply |
| Pino H12 | VSSQ — DQ ground |
Aplicações típicas
NT5CC256M16ER-EK é adequado para 6 aplicaçãos: Laptop Memory, Embedded Systems, Networking Equipment, Industrial PCs, Consumer Electronics, Automotive Infotainment.
Laptop Memory
The NT5CC256M16ER-EK is ideal for laptop memory modules due to its 1.35V low-voltage operation, which reduces power consumption and extends battery life. Its 4Gb density and 256Mx16 organization provide sufficient capacity for mainstream laptops. The 933MHz data rate ensures smooth multitasking and responsive performance. When used in SODIMM modules, it must be paired with a compatible memory controller that supports DDR3L. The low voltage also reduces heat generation, improving thermal management in thin and light laptops.
Recomendado
Embedded Systems
In embedded systems, the NT5CC256M16ER-EK provides high-density volatile storage for applications like industrial controllers, networking equipment, and medical devices. Its wide temperature range (0°C to +95°C) supports industrial environments. The 1.35V operation is compatible with low-power embedded processors. The device's auto self-refresh and write leveling features simplify system design. For reliable operation, ensure proper decoupling and follow the layout guidelines in the datasheet.
Recomendado
Networking Equipment
The NT5CC256M16ER-EK is suitable for networking equipment such as routers, switches, and firewalls, where high-bandwidth memory is required for packet buffering and routing tables. Its 933MHz data rate provides fast data throughput, and the 4Gb density allows large buffers. The low-voltage operation reduces power consumption in always-on network devices. The TFBGA-96 package is compact, enabling high-density PCB layouts. For optimal performance, use with a DDR3L controller that supports ECC if needed.
Recomendado
Industrial PCs
Industrial PCs require reliable memory that can operate in harsh environments. The NT5CC256M16ER-EK's 0°C to +95°C temperature range covers most industrial settings. Its 1.35V operation reduces power and heat, which is critical in sealed enclosures. The 4Gb density supports demanding industrial applications like machine vision and process control. The device's robust design includes features like auto self-refresh to maintain data integrity. When designing, consider using industrial-grade variants like the -EKI for extended temperature ranges.
Recomendado
Consumer Electronics
In consumer electronics such as smart TVs, set-top boxes, and gaming consoles, the NT5CC256M16ER-EK provides high-speed memory for multimedia processing. Its 933MHz data rate supports HD video streaming and gaming. The low-voltage operation is ideal for energy-efficient devices. The 4Gb density allows multiple applications to run simultaneously. The TFBGA-96 package is suitable for compact consumer devices. For best performance, pair with a processor that supports DDR3L-1866.
Recomendado
Automotive Infotainment
The NT5CC256M16ER-EK can be used in automotive infotainment systems, providing memory for navigation, audio, and video playback. Its 1.35V operation reduces power consumption in vehicles. The 0°C to +95°C temperature range is suitable for cabin environments. The 4Gb density supports complex infotainment software. However, for automotive-grade requirements, consider the -EKI variant with industrial temperature range. Ensure compliance with AEC-Q100 if required.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para NT5CC256M16ER-EK — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | NT5CC256M16ER-EKI | MT41K256M16TW-107:P | AS4C256M16D3LC-10BCN | IS43TR16512B-107MBL | K4B4G1646E-HCK0 | H5TQ2G83AFR-PBC |
|---|---|---|---|---|---|---|---|
| Package | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 |
| Brand | Nanya Technology | Nanya Technology | Micron Technology | Alliance Memory | ISSI | Samsung Electronics | SK Hynix |
| Density | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Data Rate | 933 MHz | 933 MHz | 933 MHz | 933 MHz | 933 MHz | 933 MHz | 933 MHz |
| Operating Temperature | 0°C to +95°C | -40°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
Principais diferenciais
- Low-voltage operation at 1.35V (vs Standard DDR3 parts at 1.5V)
- Wide temperature range up to +95°C (vs Some competitors limited to +85°C)
- High density 4Gb in 256Mx16 (vs Lower density parts like 2Gb)
Notas de projeto
For high-speed DDR3L signals, maintain controlled impedance of 40-60 ohms for data lines and 50-60 ohms for address/control lines. Keep trace lengths matched within 100 mils for each byte lane. Use ground planes beneath the memory area to reduce noise and ensure signal integrity.
Decouple the VDD and VDDQ pins with 0.1uF and 1uF ceramic capacitors placed as close as possible to the pins. Use a 10uF bulk capacitor on the power rail. The 1.35V supply must be stable and low-noise; consider a dedicated LDO or DC-DC converter with adequate load transient response.
The NT5CC256M16ER-EK operates up to +95°C. Ensure adequate airflow or heatsinking in high-temperature environments. The TFBGA-96 package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values. For industrial applications, consider the -EKI variant with wider temperature range.
Informações de conformidade
RoHS compliant per LCSC and JLCPCB listings. Lead-free per product description.
