STW45NM50 vs IRFP260MPBF Сравнение
Подробное сравнение бок о бок STW45NM50 от STMicroelectronics и IRFP260MPBF от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
STMicroelectronics
STW45NM50 - 45A, 500V N-Channel Power MOSFET | STMicroelectronics
STW45NM50 ✓ Активен
Сравнение характеристик
| Параметр | STW45NM50 | IRFP260MPBF |
|---|---|---|
| Бренд | STMicroelectronics | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $9,55 | $2,85 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 500 V | 200 V |
| Continuous Drain Current (ID) at 25°C | 45 A | — |
| Continuous Drain Current (ID) at 100°C | 30 A | — |
| Pulsed Drain Current (IDM) | 180 A | [DATA_NEEDED: IDM] |
| Gate-Source Voltage (VGS) | ±30 V | — |
| On-Resistance (RDS(on)) | 0.09 ohm | — |
| Gate Charge (Qg) | 120 nC | — |
| Avalanche Energy (EAS) | 1.2 J | — |
| Power Dissipation (PD) | 450 W | — |
| Диапазон рабочих температур | -55°C to +150°C | -55C to +175C |
| Корпус | TO-247 | — |
| Тип монтажа | Through Hole | Through Hole |
| Статус RoHS | Compliant | Compliant |
| Без галогенов | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Part Status | — | Active |
| FET Type | — | N-Channel |
| Technology | — | MOSFET (Metal Oxide Semiconductor) |
| Continuous Drain Current (ID) at Tc=25C | — | 50 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Power Dissipation (PD) at Tc=25C | — | 300 W |
| On-Resistance RDS(on) max | — | 40 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th)] |
| Input Capacitance Ciss | — | 1560 pF |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg] |
| Корпус / Типоразмер | — | TO-247AC (3-lead through-hole) |
| Lead-Free | — | Yes |
| Avalanche Rated | — | Yes |
| Уровень MSL | — | Not Applicable (through-hole) |