STW45NM50 vs IRFP260MPBF 对比

详细并排对比 STW45NM50 出自 STMicroelectronics 和 IRFP260MPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

STMicroelectronics
STW45NM50 STW45NM50 - 45A, 500V N-Channel Power MOSFET | STMicroelectronics

STW45NM50 - 45A, 500V N-Channel Power MOSFET | STMicroelectronics

STW45NM50 ✓ 量产中

规格对比

参数 STW45NM50 IRFP260MPBF
品牌 STMicroelectronics Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $9.55 $2.85
Polarity N-Channel —
Drain-Source Voltage (VDS) 500 V 200 V
Continuous Drain Current (ID) at 25°C 45 A —
Continuous Drain Current (ID) at 100°C 30 A —
Pulsed Drain Current (IDM) 180 A [DATA_NEEDED: IDM]
Gate-Source Voltage (VGS) ±30 V —
On-Resistance (RDS(on)) 0.09 ohm —
Gate Charge (Qg) 120 nC —
Avalanche Energy (EAS) 1.2 J —
Power Dissipation (PD) 450 W —
工作温度范围 -55°C to +150°C -55C to +175C
封装 TO-247 —
安装类型 Through Hole Through Hole
RoHS 状态 Compliant Compliant
无卤 Yes —
Manufacturer — Infineon Technologies
Part Status — Active
FET Type — N-Channel
Technology — MOSFET (Metal Oxide Semiconductor)
Continuous Drain Current (ID) at Tc=25C — 50 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Power Dissipation (PD) at Tc=25C — 300 W
On-Resistance RDS(on) max — 40 mOhm
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th)]
Input Capacitance Ciss — 1560 pF
Total Gate Charge Qg — [DATA_NEEDED: Qg]
封装 / 外壳 — TO-247AC (3-lead through-hole)
Lead-Free — Yes
Avalanche Rated — Yes
MSL 等级 — Not Applicable (through-hole)

数据手册与资源

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