1EDN7126GXTMA1 - 1.5A 200V TDI Gate Driver for GaN | Infineon
Артикул: 1EDN7126GXTMA1 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $0.42 | $0,42 |
| 10 | $0.4 | $4,00 |
| 100 | $0.37 | $37,00 |
| 500 | $0.34 | $170,00 |
| 1.000 | $0.32 | $320,00 |
| 3.000 | $0.29 | $870,00 |
1EDN7126GXTMA1 Обзор
What is a GaN gate driver? A GaN gate driver is a specialized power-management IC that translates low-power PWM control signals from a system controller into the high-current, fast-edge drive levels required to switch a gallium-nitride high-electron-mobility transistor (HEMT). Within the broader power-management hierarchy, gate drivers sit between the controller IC (logic domain) and the power switch (GaN HEMT or Si MOSFET), and they are essential for unlocking the high dV/dt and low switching-loss advantages that GaN devices provide over silicon MOSFETs. Compared with general-purpose low-side MOSFET drivers, GaN drivers such as the 1EDN family are designed for tight timing symmetry, robust galvanic isolation, and the ability to handle large negative gate-drive transients.
Key features of the 1EDN7126GXTMA1 include 1.5 A peak source/sink drive strength, 200 V common-mode voltage transient immunity (CMR), true differential input with built-in hysteresis, and a wide operating voltage range that supports both 5 V and 12 V drive rails. The non-inverting single-channel architecture minimizes external component count, and the small PG-VSON-10-4 footprint (3 x 3 mm) saves PCB area in compact half-bridge or buck/boost power stages.
Technically, the part uses Infineon's TDI (truly differential input) stage to reject large common-mode transients caused by fast switching nodes, which is critical for hard-switched half-bridge topologies. The integrated bootstrap-compatibility and matched propagation delays (typical < 10 ns skew) help prevent shoot-through in synchronous rectifier configurations and enable megahertz-class switching frequencies without timing-induced loss penalties.
Typical applications include high-density DC-DC converters, telecom 48 V point-of-load stages, server and data-center power-delivery bricks, motor-drive auxiliary rails, and any high-frequency LLC or totem-pole PFC stage using GaN HEMTs.
When designing with this device, place it close to the GaN switch to minimize gate-loop inductance, and use a Kelvin-source connection. A small ferrite bead or gate resistor in series with the output is recommended to damp ringing and control edge rates.
This page synthesizes distributor pricing, drop-in compatible alternatives from the Infineon EiceDRIVER family, and PCB layout guidance not found in the manufacturer datasheet.
Аналоги без доработки для 1EDN7126GXTMA1 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с 1EDN7126GXTMA1 (тот же форм-фактор и посадочное место) — отличается по Package, Peak Sink Current, Peak Source Current, Input Type, Function.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
1EDN7146GXTMA1
✅ Прямая замена✓ В наличии
$1.05 / шт.
Открыть даташит →1EDN7550BXTSA1
✅ Прямая замена✓ В наличии
$0.59 / шт.
Открыть даташит →1EDN7511BXUSA1
✅ Прямая замена✓ В наличии
$0.95 / шт.
Открыть даташит →1EDN8550BXUSA1
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
1ED44173N01BXTSA1
✅ Прямая замена✓ В наличии
$0.42 / шт.
Открыть даташит →1EDN7126GXTMA1 Максимальные параметры и электрические характеристики
| Функция | Single-channel TDI gate driver for GaN HEMT and Si MOSFET |
| Configuration | Non-Inverting |
| Channel Type | Single |
| Peak Source Current | 1.5 A |
| Peak Sink Current | 1.5 A |
| Common-Mode Voltage (CMR) | 200 V |
| Input Type | Truly Differential Input (TDI) |
| Диапазон рабочих температур | -40C to +125C |
| Корпус | PG-VSON-10-4 |
| Тип монтажа | Surface Mount |
| Статус RoHS | Compliant |
| Reach | Compliant |
| Lead-Free | Yes |
| Input Logic Compatibility | 3.3 V / 5 V TTL/CMOS (TDI) |
Конфигурация выводов 1EDN7126GXTMA1
| Контакт 1 | IN+ — Differential input positive (TDI) |
| Контакт 2 | IN- — Differential input negative (TDI) |
| Контакт 3 | GND — Ground reference for input stage |
| Контакт 4 | VCC — Driver supply voltage |
| Контакт 5 | NC — Not connected (per datasheet) |
| Контакт 6 | OUT — Gate drive output to GaN HEMT or MOSFET |
| Контакт 7 | NC — Not connected (per datasheet) |
| Контакт 8 | NC — Not connected (per datasheet) |
| Контакт 9 | NC — Not connected (per datasheet) |
| Контакт 10 | EP — Exposed pad / thermal pad - solder to PCB |
Типичное применение
1EDN7126GXTMA1 подходит для 6 применениеs: High-Density DC-DC Converters, Telecom 48 V Point-of-Load, Server and Data-Center Power Delivery, Motor-Drive Auxiliary Rails, Totem-Pole PFC Power Stages, LLC and Resonant Converters.
High-Density DC-DC Converters
The 1EDN7126GXTMA1 is well matched to 48 V to point-of-load buck and buck-boost converters using 100 V GaN HEMTs. The 1.5 A peak drive strength switches the gate in < 5 ns, which directly shrinks switching loss and lets designers push frequency above 1 MHz for smaller magnetics. Its 200 V CMR allows the high-side switch to be driven safely in a half-bridge GaN stage, where conventional low-side drivers would false-trigger on the large dV/dt seen at the source node.
Рекомендуется
Telecom 48 V Point-of-Load
In telecom 48 V rails feeding downstream POL converters, the 1EDN7126GXTMA1 drives GaN HEMTs at the primary side while its small PG-VSON-10-4 footprint allows tight placement near the switch. The truly differential input stage rejects common-mode noise injected by parallel high-current traces on the backplane, avoiding false turn-on during load transients. Compared with bootstrap low-side drivers, the 1EDN7126GXTMA1's 200 V CMR margin handles the source swing of high-side GaN in half-bridge configurations used in isolated bus converters.
Рекомендуется
Server and Data-Center Power Delivery
For server and data-center bricks such as 48 V to 12 V or 12 V to 1 V stages, the 1EDN7126GXTMA1 enables MHz-class switching that shrinks magnetic volume and improves transient response. The 1.5 A drive current keeps gate-drive loss well below 1 percent of total stage loss, and the differential input lets the controller sit on a separate ground domain for cleaner housekeeping signals. The PG-VSON-10-4 footprint also helps keep the high-current loop short, which is critical for EMI in dense multi-phase server designs.
Рекомендуется
Motor-Drive Auxiliary Rails
Industrial motor drives use the 1EDN7126GXTMA1 to drive GaN-based auxiliary rails such as gate-driver supplies, housekeeping converters, and isolated sensor rails. The 200 V CMR tolerance allows reliable high-side drive even when the motor inverter creates large common-mode transients on the same PCB. With 1.5 A drive capability the part supports GaN switches up to 200 V rated, fitting low-voltage three-phase servo and BLDC drive subsystems.
Рекомендуется
Totem-Pole PFC Power Stages
In bridgeless totem-pole PFC stages using 650 V GaN HEMTs, the 1EDN7126GXTMA1 drives the high-side arm where common-mode dV/dt can exceed 100 kV/us. The TDI architecture eliminates the need for a digital isolator on the high-side drive path, simplifying BOM and shrinking PCB area. With matched propagation delays below 10 ns, the 1EDN7126GXTMA1 minimizes dead-time and the resulting reverse-recovery penalty on the slow leg during AC line cycles.
Рекомендуется
LLC and Resonant Converters
Resonant LLC converters for EV onboard chargers, LED drivers, and welding inverters benefit from the 1EDN7126GXTMA1's narrow timing skew and 1.5 A peak drive. The differential input preserves signal integrity in the noisy environment created by the resonant tank, where reflected dV/dt easily reaches 50 V/ns. The 10-pin PG-VSON-10-4 package simplifies the high-side / low-side layout symmetry, reducing parasitic mismatch that would otherwise degrade LLC efficiency.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для 1EDN7126GXTMA1 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | 1EDN7146GXTMA1 | 1EDN7550BXTSA1 | 1EDN7511BXUSA1 | 1EDN8550BXUSA1 | 1ED44173N01BXTSA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-VSON-10-4 | PG-VSON-10-4 - same | PG-VSON-10-4 - same | PG-VSON-10-4 - same | PG-VSON-10-4 - same | PG-VSON-10-4 - same |
| Channel Count | 1 | 1 | 1 | 1 | 1 | 1 |
| Peak Source / Sink Current | 1.5 A / 1.5 A | 1.5 A / 1.5 A | 0.5 A / 0.5 A | 1.0 A / 1.0 A | 1.5 A / 1.5 A | 1.5 A / 1.5 A |
| Common-Mode Voltage (CMR) | 200 V | 200 V | 100 V | 100 V | 300 V | 200 V |
| Input Type | TDI (Truly Differential) | TDI | Single-ended | TDI | Isolated TDI | Isolated TDI |
| Polarity | Non-Inverting | Non-Inverting | Non-Inverting | Non-Inverting | Non-Inverting | Non-Inverting |
| Operating Temperature | -40C to +125C | -40C to +125C | -40C to +125C | -40C to +125C | -40C to +125C | -40C to +125C |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Ключевые отличия
- Truly differential input stage eliminates false triggering in high-side GaN drive (против 1EDN7550BXTSA1)
- Higher peak drive current than the lower-cost 75x0 family members (против 1EDN7511BXUSA1)
- Higher CMR margin than the 1EDN75xx family (против 1EDN7550BXTSA1)
Заметки по проектированию
Place the 1EDN7126GXTMA1 within 5 mm of the GaN HEMT gate pad to minimize gate-loop inductance. Use a Kelvin-source connection directly back to the driver's GND pin, never to the power-stage ground plane, to avoid ground-bounce coupling that would otherwise corrupt the differential input.
Add a small series gate resistor (typically 1 to 5 ohm) between OUT and the GaN gate to damp ringing from the LC tank formed by package inductance and gate capacitance. Place a 100 nF X7R bypass capacitor directly at the VCC pin with the shortest possible return path to GND to keep the driver rail stiff during 1.5 A peak transients.
Do not operate the 1EDN7126GXTMA1 below the minimum supply-voltage threshold or with a noisy bootstrap diode - both lead to under-driven GaN switches and shoot-through. Verify the differential inputs are biased within the common-mode range of the GaN source swing; otherwise the TDI stage can saturate and the output becomes undefined.
When the controller and driver sit on different ground domains (common in isolated converters), keep the differential pair from IN+ to IN- tightly coupled and length-matched. Route them on an inner PCB layer over a continuous ground plane to reject the common-mode transients injected by adjacent high-current switching loops.
Информация о соответствии
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified; for automotive GaN drive refer to Infineon's automotive-grade EiceDRIVER catalog.
