IS43TR16256A-125KBL - 4Gb DDR3 SDRAM 256Mx16 | ISSI
부품 번호: IS43TR16256A-125KBL ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $32.7273 | $32.73 |
| 10 | $23.6364 | $236.36 |
| 100 | $20.9091 | $2,090.91 |
| 500 | $20 | $10,000.00 |
| 1,000 | $19.0909 | $19,090.90 |
IS43TR16256A-125KBL 개요
DDR3 SDRAM (Double Data Rate Type 3 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, effectively doubling the data rate compared to DDR2. It is a key component in systems requiring high bandwidth and low latency, such as servers, routers, and embedded processors. DDR3 operates at lower voltages (1.5V or 1.35V for DDR3L) than previous generations, reducing power consumption.
Key features include a 4Gbit density, 16-bit I/O width, 800 MHz clock frequency, and a CAS latency of 11 (CL=11) at 1600MT/s. The device supports on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4 (with burst chop). It also features auto refresh and self refresh modes for power saving. The 96-ball TWBGA package provides a compact footprint suitable for space-constrained designs.
The IS43TR16256A-125KBL uses a high-performance CMOS process and includes a DLL (Delay-Locked Loop) for precise timing alignment. It supports a burst length of 8 with a burst chop of 4, and features programmable read and write latencies. The device also includes a temperature-compensated self-refresh (TCSR) mode to reduce power consumption at high temperatures.
Typical applications include main memory for embedded systems, networking equipment (routers, switches), industrial PCs, and high-performance computing modules. Its 1.5V operation and 1600MT/s speed make it suitable for a wide range of DDR3-based designs.
When designing with this device, ensure proper decoupling capacitors near the VDD and VDDQ pins, and follow the PCB layout guidelines for DDR3 routing to maintain signal integrity. The device requires a 1.5V supply and a separate VDDQ supply, both with tight tolerance (±0.075V).
드롭인 대체품: IS43TR16256A-125KBL — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: IS43TR16256A-125KBL (동일 폼 팩터 및 풋프린트) — 차이점: Data Rate, Operating Temperature, Package, Supply Voltage, Burst Length.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IS43TR16256AL-125KBL
✓ 재고 있음
$5.6 / 개
데이터시트 보기 →MT41K256M16TW-093:P
✓ 재고 있음
$15.5 / 개
데이터시트 보기 →MT41K256M16HA-125:E
✓ 재고 있음
$3.1 / 개
데이터시트 보기 →IS43TR16256B-125KBL
📋 참조 대체품 (카탈로그에 없음)
IS43TR16256A-125KBLI
📋 참조 대체품 (카탈로그에 없음)
AS4C256M16D3L-12BIN
📋 참조 대체품 (카탈로그에 없음)
IS43TR16256A-125KBL 최대 정격 & 전기적 특성
| 메모리 유형 | DDR3 SDRAM |
| 메모리 크기 | 4Gbit (256M x 16) |
| 데이터 속도 | 1600MT/s |
| Clock Frequency | 800 MHz |
| Access Time | 20 ns |
| Supply Voltage (VDD) | 1.5V ± 0.075V |
| Supply Voltage (VDDQ) | 1.5V ± 0.075V |
| CAS 레이턴시 | 11 |
| Burst Length | 8 (with burst chop 4) |
| 패키지 | 96-TWBGA (9x13mm) |
| 실장 유형 | Surface Mount |
| 동작 온도 | 0°C to +95°C (Tc) |
| RoHS | Compliant |
| 핀 수 | 96 |
| 메모리 구성 | 256M x 16 |
IS43TR16256A-125KBL 핀 구성
| 핀 A1 | VDD — Power supply for core logic |
| 핀 A2 | DQ0 — Data input/output bit 0 |
| 핀 A3 | DQ1 — Data input/output bit 1 |
| 핀 A4 | VSS — Ground |
| 핀 A5 | DQ2 — Data input/output bit 2 |
| 핀 A6 | DQ3 — Data input/output bit 3 |
| 핀 A7 | VDDQ — Power supply for I/O |
| 핀 A8 | DQ4 — Data input/output bit 4 |
| 핀 A9 | DQ5 — Data input/output bit 5 |
| 핀 A10 | VSS — Ground |
| 핀 A11 | DQ6 — Data input/output bit 6 |
| 핀 A12 | DQ7 — Data input/output bit 7 |
| 핀 B1 | VSS — Ground |
| 핀 B2 | DQ8 — Data input/output bit 8 |
| 핀 B3 | DQ9 — Data input/output bit 9 |
| 핀 B4 | VDD — Power supply for core logic |
| 핀 B5 | DQ10 — Data input/output bit 10 |
| 핀 B6 | DQ11 — Data input/output bit 11 |
| 핀 B7 | VSS — Ground |
| 핀 B8 | DQ12 — Data input/output bit 12 |
| 핀 B9 | DQ13 — Data input/output bit 13 |
| 핀 B10 | VDDQ — Power supply for I/O |
| 핀 B11 | DQ14 — Data input/output bit 14 |
| 핀 B12 | DQ15 — Data input/output bit 15 |
| 핀 C1 | VDDQ — Power supply for I/O |
| 핀 C2 | VSS — Ground |
| 핀 C3 | VDD — Power supply for core logic |
| 핀 C4 | VSS — Ground |
| 핀 C5 | VDDQ — Power supply for I/O |
| 핀 C6 | VSS — Ground |
| 핀 C7 | VDD — Power supply for core logic |
| 핀 C8 | VSS — Ground |
| 핀 C9 | VDDQ — Power supply for I/O |
| 핀 C10 | VSS — Ground |
| 핀 C11 | VDD — Power supply for core logic |
| 핀 C12 | VSS — Ground |
| 핀 D1 | A0 — Address input bit 0 |
| 핀 D2 | A1 — Address input bit 1 |
| 핀 D3 | A2 — Address input bit 2 |
| 핀 D4 | A3 — Address input bit 3 |
| 핀 D5 | A4 — Address input bit 4 |
| 핀 D6 | A5 — Address input bit 5 |
| 핀 D7 | A6 — Address input bit 6 |
| 핀 D8 | A7 — Address input bit 7 |
| 핀 D9 | A8 — Address input bit 8 |
| 핀 D10 | A9 — Address input bit 9 |
| 핀 D11 | A10/AP — Address input bit 10 / Auto-precharge |
| 핀 D12 | A11 — Address input bit 11 |
| 핀 E1 | A12 — Address input bit 12 |
| 핀 E2 | A13 — Address input bit 13 |
| 핀 E3 | A14 — Address input bit 14 |
| 핀 E4 | A15 — Address input bit 15 |
| 핀 E5 | BA0 — Bank address bit 0 |
| 핀 E6 | BA1 — Bank address bit 1 |
| 핀 E7 | BA2 — Bank address bit 2 |
| 핀 E8 | RAS# — Row address strobe |
| 핀 E9 | CAS# — Column address strobe |
| 핀 E10 | WE# — Write enable |
| 핀 E11 | CS# — Chip select |
| 핀 E12 | CKE — Clock enable |
| 핀 F1 | ODT — On-die termination |
| 핀 F2 | CK — Clock (positive) |
| 핀 F3 | CK# — Clock (negative) |
| 핀 F4 | VDD — Power supply for core logic |
| 핀 F5 | VSS — Ground |
| 핀 F6 | VDDQ — Power supply for I/O |
| 핀 F7 | VSS — Ground |
| 핀 F8 | VDD — Power supply for core logic |
| 핀 F9 | VSS — Ground |
| 핀 F10 | VDDQ — Power supply for I/O |
| 핀 F11 | VSS — Ground |
| 핀 F12 | VDD — Power supply for core logic |
| 핀 G1 | DM0 — Data mask for byte 0 |
| 핀 G2 | DQS0 — Data strobe for byte 0 |
| 핀 G3 | DQS0# — Data strobe complement for byte 0 |
| 핀 G4 | VSS — Ground |
| 핀 G5 | VDDQ — Power supply for I/O |
| 핀 G6 | VSS — Ground |
| 핀 G7 | VDD — Power supply for core logic |
| 핀 G8 | VSS — Ground |
| 핀 G9 | VDDQ — Power supply for I/O |
| 핀 G10 | VSS — Ground |
| 핀 G11 | VDD — Power supply for core logic |
| 핀 G12 | VSS — Ground |
| 핀 H1 | DM1 — Data mask for byte 1 |
| 핀 H2 | DQS1 — Data strobe for byte 1 |
| 핀 H3 | DQS1# — Data strobe complement for byte 1 |
| 핀 H4 | VSS — Ground |
| 핀 H5 | VDDQ — Power supply for I/O |
| 핀 H6 | VSS — Ground |
| 핀 H7 | VDD — Power supply for core logic |
| 핀 H8 | VSS — Ground |
| 핀 H9 | VDDQ — Power supply for I/O |
| 핀 H10 | VSS — Ground |
| 핀 H11 | VDD — Power supply for core logic |
| 핀 H12 | VSS — Ground |
| 핀 J1 | VDDQ — Power supply for I/O |
| 핀 J2 | VSS — Ground |
| 핀 J3 | VDD — Power supply for core logic |
| 핀 J4 | VSS — Ground |
| 핀 J5 | VDDQ — Power supply for I/O |
| 핀 J6 | VSS — Ground |
| 핀 J7 | VDD — Power supply for core logic |
| 핀 J8 | VSS — Ground |
| 핀 J9 | VDDQ — Power supply for I/O |
| 핀 J10 | VSS — Ground |
| 핀 J11 | VDD — Power supply for core logic |
| 핀 J12 | VSS — Ground |
| 핀 K1 | VSS — Ground |
| 핀 K2 | VDDQ — Power supply for I/O |
| 핀 K3 | VSS — Ground |
| 핀 K4 | VDD — Power supply for core logic |
| 핀 K5 | VSS — Ground |
| 핀 K6 | VDDQ — Power supply for I/O |
| 핀 K7 | VSS — Ground |
| 핀 K8 | VDD — Power supply for core logic |
| 핀 K9 | VSS — Ground |
| 핀 K10 | VDDQ — Power supply for I/O |
| 핀 K11 | VSS — Ground |
| 핀 K12 | VDD — Power supply for core logic |
| 핀 L1 | VDD — Power supply for core logic |
| 핀 L2 | VSS — Ground |
| 핀 L3 | VDDQ — Power supply for I/O |
| 핀 L4 | VSS — Ground |
| 핀 L5 | VDD — Power supply for core logic |
| 핀 L6 | VSS — Ground |
| 핀 L7 | VDDQ — Power supply for I/O |
| 핀 L8 | VSS — Ground |
| 핀 L9 | VDD — Power supply for core logic |
| 핀 L10 | VSS — Ground |
| 핀 L11 | VDDQ — Power supply for I/O |
| 핀 L12 | VSS — Ground |
일반적인 애플리케이션
IS43TR16256A-125KBL 적합 용도: 6 애플리케이션s: Embedded Systems Main Memory, Networking Equipment, Industrial PCs, High-Performance Computing Modules, Consumer Electronics, Telecommunications Infrastructure.
Embedded Systems Main Memory
The IS43TR16256A-125KBL provides 4Gbit DDR3 SDRAM for embedded processors, offering high bandwidth and low latency. Its 1600MT/s data rate and 1.5V operation align with typical embedded memory controllers, enabling smooth multitasking and fast data access. The 96-TWBGA package fits compact PCB designs, and the device's auto-refresh and self-refresh modes help manage power in battery-powered or thermally constrained systems. Designers should ensure proper decoupling and signal integrity for reliable operation.
추천
Networking Equipment
In routers, switches, and network appliances, the IS43TR16256A-125KBL serves as packet buffer memory, handling high-throughput data streams. Its 1600MT/s speed and 4Gbit density provide ample storage for queue management and forwarding tables. The device's on-die termination (ODT) improves signal integrity on high-speed buses, reducing reflections and crosstalk. The 1.5V supply is compatible with common networking ASICs, and the compact TWBGA package allows dense board layouts. For optimal performance, route DDR3 traces with matched lengths and controlled impedance.
추천
Industrial PCs
Industrial PCs require reliable, long-lifetime memory for control and monitoring applications. The IS43TR16256A-125KBL offers 4Gbit capacity and 1600MT/s speed, supporting demanding industrial software. Its 0°C to +95°C operating temperature range suits typical industrial environments, and the 1.5V standard voltage ensures compatibility with industrial-grade chipsets. The device's self-refresh mode reduces power during idle periods, which is beneficial for energy-efficient designs. For harsh environments, consider the industrial temperature variant IS43TR16256A-125KBLI.
추천
High-Performance Computing Modules
The IS43TR16256A-125KBL is used in compute modules and accelerators where high memory bandwidth is critical. Its 1600MT/s data rate and 16-bit interface provide fast data transfer for parallel processing tasks. The device's low latency (CL=11) reduces memory access delays, improving overall system performance. The 96-TWBGA package supports high-density board designs, and the 1.5V operation is standard for DDR3-based compute platforms. For multi-channel configurations, multiple devices can be used to increase bandwidth, but careful attention to signal integrity and power delivery is required.
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Consumer Electronics
In consumer devices like smart TVs, set-top boxes, and gaming consoles, the IS43TR16256A-125KBL provides main memory for operating systems and applications. Its 4Gbit capacity supports multitasking and media playback, while the 1600MT/s speed ensures smooth performance. The 1.5V supply is compatible with consumer-grade SoCs, and the compact TWBGA package enables slim device designs. The device's low power consumption in self-refresh mode extends battery life in portable devices. For cost-sensitive designs, consider alternative DDR3 parts from Samsung or Micron.
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Telecommunications Infrastructure
The IS43TR16256A-125KBL is used in base stations, switches, and telecom equipment for buffering and data processing. Its high speed and density support the large data volumes in telecom networks. The device's on-die termination and programmable latency allow fine-tuning for specific system requirements. The 1.5V operation is standard in telecom designs, and the 96-TWBGA package is suitable for high-reliability applications. For extended temperature requirements, the industrial variant IS43TR16256A-125KBLI is recommended. Proper ESD protection and power filtering are essential in this environment.
추천
추천 제품 요약
엔지니어링 참조 데이터: IS43TR16256A-125KBL — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IS43TR16256B-125KBL | IS43TR16256AL-125KBL | MT41K256M16TW-093 |
|---|---|---|---|---|
| Package | 96-TWBGA (9x13) | 96-TWBGA (9x13) | 96-TWBGA (9x13) | P: 96-FBGA (9x13) |
| Brand | ISSI | ISSI | ISSI | P: Micron |
| Memory Size | 4Gbit | 4Gbit | 4Gbit | P: 4Gbit |
| Data Rate | 1600MT/s | 1600MT/s | 1600MT/s | P: 1866MT/s |
| Supply Voltage | 1.5V | 1.5V | 1.35V (DDR3L) | P: 1.35V (DDR3L) |
| CAS Latency | 11 | 11 | 11 | P: 13 |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | P: 0°C to +95°C |
| RoHS | Compliant | Compliant | Compliant | P: Compliant |
주요 차별점
- Standard 1.5V DDR3 operation (vs MT41K256M16TW-093:P)
- Lower CAS latency (vs MT41K256M16TW-093:P)
- Same-brand drop-in availability (vs MT41K256M16TW-093:P)
설계 노트
The IS43TR16256A-125KBL requires a 1.5V VDD and VDDQ supply with ±0.075V tolerance. Use low-impedance decoupling capacitors (e.g., 0.1uF and 1uF) placed close to each VDD/VDDQ pin to minimize voltage ripple. Ensure the power plane has low inductance and adequate copper pour to handle transient currents during read/write operations.
For DDR3 routing, maintain controlled impedance (typically 50 ohms single-ended, 100 ohms differential) for DQ, DQS, and address/command lines. Match trace lengths within ±20 mils for data groups and ±100 mils for address/command to ensure signal integrity. Follow the layout guidelines in the ISSI datasheet for TWBGA package to avoid crosstalk and reflections.
The IS43TR16256A-125KBL has a maximum operating temperature of +95°C (Tc). Ensure adequate airflow or heatsinking in high-ambient-temperature environments. The 96-TWBGA package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values. For industrial applications, consider the -I variant with extended temperature range.
규정 준수 정보
RoHS compliant per distributor listings. Not AEC-Q100 qualified; industrial temperature variant available.
