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ISSI, Integrated Silicon Solution Inc

IS43TR16256A-125KBL - 4Gb DDR3 SDRAM 256Mx16 | ISSI

Référence : IS43TR16256A-125KBL ✓ Actif
En stock Expédié sous 1 à 3 jours ouvrés
1.5V ± 0.075V Vdss 96-TWBGA (9x13mm) Package 800 MHz Speed DDR3 SDRAM Memory
À partir de $19.0909 USD / unité
MOQ : 1 |
Prix mis à jour : 2026-08-21
Tarifs dégressifs
Qté Prix unitaire Total
1 $32.7273 $32,73
10 $23.6364 $236,36
100 $20.9091 $2 090,91
500 $20 $10 000,00
1 000 $19.0909 $19 090,90
ℹ️ Tous les prix sont en USD

IS43TR16256A-125KBL Présentation

The IS43TR16256A-125KBL is a 4Gbit DDR3 SDRAM organized as 256M x 16, manufactured by Integrated Silicon Solution Inc (ISSI). It operates at a standard voltage of 1.5V (VDD and VDDQ) with a data rate of 1600MT/s (800 MHz clock), and is available in a 96-ball TWBGA (9x13mm) package. This memory IC is designed for high-speed data transfer in computing, networking, and industrial applications.

DDR3 SDRAM (Double Data Rate Type 3 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, effectively doubling the data rate compared to DDR2. It is a key component in systems requiring high bandwidth and low latency, such as servers, routers, and embedded processors. DDR3 operates at lower voltages (1.5V or 1.35V for DDR3L) than previous generations, reducing power consumption.

Key features include a 4Gbit density, 16-bit I/O width, 800 MHz clock frequency, and a CAS latency of 11 (CL=11) at 1600MT/s. The device supports on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4 (with burst chop). It also features auto refresh and self refresh modes for power saving. The 96-ball TWBGA package provides a compact footprint suitable for space-constrained designs.

The IS43TR16256A-125KBL uses a high-performance CMOS process and includes a DLL (Delay-Locked Loop) for precise timing alignment. It supports a burst length of 8 with a burst chop of 4, and features programmable read and write latencies. The device also includes a temperature-compensated self-refresh (TCSR) mode to reduce power consumption at high temperatures.

Typical applications include main memory for embedded systems, networking equipment (routers, switches), industrial PCs, and high-performance computing modules. Its 1.5V operation and 1600MT/s speed make it suitable for a wide range of DDR3-based designs.

When designing with this device, ensure proper decoupling capacitors near the VDD and VDDQ pins, and follow the PCB layout guidelines for DDR3 routing to maintain signal integrity. The device requires a 1.5V supply and a separate VDDQ supply, both with tight tolerance (±0.075V).

Alternatives de remplacement direct pour IS43TR16256A-125KBL — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.

Variantes de cette série

Modèles de la même série directement compatibles avec IS43TR16256A-125KBL (même facteur de forme et même empreinte) — différant par Data Rate, Operating Temperature, Package, Supply Voltage, Burst Length.

ISSI, Integrated Silicon Solution Inc
Data Rate: 1866 Mbps
Supply Voltage: 1.35V (backward compatible to 1.5V)
Burst Length: 8 and 4
Comparer avec IS43TR16256A-125KBL →
ISSI, Integrated Silicon Solution Inc
Data Rate: 1600 Mbps
Operating Temperature: 0°C ~ 95°C
Supply Voltage: 1.35V (backward compatible to 1.5V)
Comparer avec IS43TR16256A-125KBL →
Samsung Electronics
Data Rate: 2133 Mb/s per pin
Operating Temperature: 0°C to +85°C
Package: 96FBGA
Comparer avec IS43TR16256A-125KBL →
Winbond
Data Rate: 1866 MT/s
Operating Temperature: -40°C to +95°C
Package: 96-VFBGA (7.5x13 mm)
Comparer avec IS43TR16256A-125KBL →
Winbond
Data Rate: 800 MHz (DDR3L-1600)
Operating Temperature: -40°C to +95°C (TCASE)
Package: 96-VFBGA (7.5x13mm)
Comparer avec IS43TR16256A-125KBL →

Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :

IS43TR16256AL-125KBL

ISSI, Integrated Silicon Solution Inc
SDRAM - DDR3L · 4Gbit (256M x 16) · Parallel · 800 MHz · 20 ns · 1.35V (backward compatible to 1.5V) · 96-TWBGA (9x13mm) · Surface Mount

✓ En stock

$5.6 / unité

Voir la fiche technique →

MT41K256M16TW-093:P

Micron Technology
SDRAM - DDR3L · 4 Gbit · 256 M x 16 · 16 bit · 1.066 GHz · 20 ns · 1.35 V (1.5 V compatible) · 96-FBGA (8x14)

✓ En stock

$15.5 / unité

Voir la fiche technique →

MT41K256M16HA-125:E

Micron Technology
DDR3L SDRAM · 4 Gbit · 256M x 16 · 800 MHz · 13.75 ns · 1.35 V (DDR3L) · 1.35 V · 96-FBGA (9x14 mm)

✓ En stock

$3.1 / unité

Voir la fiche technique →

IS43TR16256B-125KBL

Same package and pinout, minor die revision

📋 Alternative de référence (hors catalogue)

IS43TR16256A-125KBLI

Industrial temperature range (-40°C to +95°C)

📋 Alternative de référence (hors catalogue)

AS4C256M16D3L-12BIN

DDR3L 1.35V, same package

📋 Alternative de référence (hors catalogue)

IS43TR16256A-125KBL Valeurs maximales et caractéristiques électriques

Type de mémoire DDR3 SDRAM
Taille de mémoire 4Gbit (256M x 16)
Débit de données 1600MT/s
Clock Frequency 800 MHz
Access Time 20 ns
Supply Voltage (VDD) 1.5V ± 0.075V
Supply Voltage (VDDQ) 1.5V ± 0.075V
Latence CAS 11
Burst Length 8 (with burst chop 4)
Boîtier 96-TWBGA (9x13mm)
Type de montage Surface Mount
Température de fonctionnement 0°C to +95°C (Tc)
RoHS Compliant
Nombre de broches 96
Organisation de la mémoire 256M x 16

Configuration des broches de IS43TR16256A-125KBL

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
Broche A1 VDD — Power supply for core logic
Broche A2 DQ0 — Data input/output bit 0
Broche A3 DQ1 — Data input/output bit 1
Broche A4 VSS — Ground
Broche A5 DQ2 — Data input/output bit 2
Broche A6 DQ3 — Data input/output bit 3
Broche A7 VDDQ — Power supply for I/O
Broche A8 DQ4 — Data input/output bit 4
Broche A9 DQ5 — Data input/output bit 5
Broche A10 VSS — Ground
Broche A11 DQ6 — Data input/output bit 6
Broche A12 DQ7 — Data input/output bit 7
Broche B1 VSS — Ground
Broche B2 DQ8 — Data input/output bit 8
Broche B3 DQ9 — Data input/output bit 9
Broche B4 VDD — Power supply for core logic
Broche B5 DQ10 — Data input/output bit 10
Broche B6 DQ11 — Data input/output bit 11
Broche B7 VSS — Ground
Broche B8 DQ12 — Data input/output bit 12
Broche B9 DQ13 — Data input/output bit 13
Broche B10 VDDQ — Power supply for I/O
Broche B11 DQ14 — Data input/output bit 14
Broche B12 DQ15 — Data input/output bit 15
Broche C1 VDDQ — Power supply for I/O
Broche C2 VSS — Ground
Broche C3 VDD — Power supply for core logic
Broche C4 VSS — Ground
Broche C5 VDDQ — Power supply for I/O
Broche C6 VSS — Ground
Broche C7 VDD — Power supply for core logic
Broche C8 VSS — Ground
Broche C9 VDDQ — Power supply for I/O
Broche C10 VSS — Ground
Broche C11 VDD — Power supply for core logic
Broche C12 VSS — Ground
Broche D1 A0 — Address input bit 0
Broche D2 A1 — Address input bit 1
Broche D3 A2 — Address input bit 2
Broche D4 A3 — Address input bit 3
Broche D5 A4 — Address input bit 4
Broche D6 A5 — Address input bit 5
Broche D7 A6 — Address input bit 6
Broche D8 A7 — Address input bit 7
Broche D9 A8 — Address input bit 8
Broche D10 A9 — Address input bit 9
Broche D11 A10/AP — Address input bit 10 / Auto-precharge
Broche D12 A11 — Address input bit 11
Broche E1 A12 — Address input bit 12
Broche E2 A13 — Address input bit 13
Broche E3 A14 — Address input bit 14
Broche E4 A15 — Address input bit 15
Broche E5 BA0 — Bank address bit 0
Broche E6 BA1 — Bank address bit 1
Broche E7 BA2 — Bank address bit 2
Broche E8 RAS# — Row address strobe
Broche E9 CAS# — Column address strobe
Broche E10 WE# — Write enable
Broche E11 CS# — Chip select
Broche E12 CKE — Clock enable
Broche F1 ODT — On-die termination
Broche F2 CK — Clock (positive)
Broche F3 CK# — Clock (negative)
Broche F4 VDD — Power supply for core logic
Broche F5 VSS — Ground
Broche F6 VDDQ — Power supply for I/O
Broche F7 VSS — Ground
Broche F8 VDD — Power supply for core logic
Broche F9 VSS — Ground
Broche F10 VDDQ — Power supply for I/O
Broche F11 VSS — Ground
Broche F12 VDD — Power supply for core logic
Broche G1 DM0 — Data mask for byte 0
Broche G2 DQS0 — Data strobe for byte 0
Broche G3 DQS0# — Data strobe complement for byte 0
Broche G4 VSS — Ground
Broche G5 VDDQ — Power supply for I/O
Broche G6 VSS — Ground
Broche G7 VDD — Power supply for core logic
Broche G8 VSS — Ground
Broche G9 VDDQ — Power supply for I/O
Broche G10 VSS — Ground
Broche G11 VDD — Power supply for core logic
Broche G12 VSS — Ground
Broche H1 DM1 — Data mask for byte 1
Broche H2 DQS1 — Data strobe for byte 1
Broche H3 DQS1# — Data strobe complement for byte 1
Broche H4 VSS — Ground
Broche H5 VDDQ — Power supply for I/O
Broche H6 VSS — Ground
Broche H7 VDD — Power supply for core logic
Broche H8 VSS — Ground
Broche H9 VDDQ — Power supply for I/O
Broche H10 VSS — Ground
Broche H11 VDD — Power supply for core logic
Broche H12 VSS — Ground
Broche J1 VDDQ — Power supply for I/O
Broche J2 VSS — Ground
Broche J3 VDD — Power supply for core logic
Broche J4 VSS — Ground
Broche J5 VDDQ — Power supply for I/O
Broche J6 VSS — Ground
Broche J7 VDD — Power supply for core logic
Broche J8 VSS — Ground
Broche J9 VDDQ — Power supply for I/O
Broche J10 VSS — Ground
Broche J11 VDD — Power supply for core logic
Broche J12 VSS — Ground
Broche K1 VSS — Ground
Broche K2 VDDQ — Power supply for I/O
Broche K3 VSS — Ground
Broche K4 VDD — Power supply for core logic
Broche K5 VSS — Ground
Broche K6 VDDQ — Power supply for I/O
Broche K7 VSS — Ground
Broche K8 VDD — Power supply for core logic
Broche K9 VSS — Ground
Broche K10 VDDQ — Power supply for I/O
Broche K11 VSS — Ground
Broche K12 VDD — Power supply for core logic
Broche L1 VDD — Power supply for core logic
Broche L2 VSS — Ground
Broche L3 VDDQ — Power supply for I/O
Broche L4 VSS — Ground
Broche L5 VDD — Power supply for core logic
Broche L6 VSS — Ground
Broche L7 VDDQ — Power supply for I/O
Broche L8 VSS — Ground
Broche L9 VDD — Power supply for core logic
Broche L10 VSS — Ground
Broche L11 VDDQ — Power supply for I/O
Broche L12 VSS — Ground

Applications typiques

IS43TR16256A-125KBL convient pour 6 applications: Embedded Systems Main Memory, Networking Equipment, Industrial PCs, High-Performance Computing Modules, Consumer Electronics, Telecommunications Infrastructure.

🔧

Embedded Systems Main Memory

The IS43TR16256A-125KBL provides 4Gbit DDR3 SDRAM for embedded processors, offering high bandwidth and low latency. Its 1600MT/s data rate and 1.5V operation align with typical embedded memory controllers, enabling smooth multitasking and fast data access. The 96-TWBGA package fits compact PCB designs, and the device's auto-refresh and self-refresh modes help manage power in battery-powered or thermally constrained systems. Designers should ensure proper decoupling and signal integrity for reliable operation.

🌐

Networking Equipment

In routers, switches, and network appliances, the IS43TR16256A-125KBL serves as packet buffer memory, handling high-throughput data streams. Its 1600MT/s speed and 4Gbit density provide ample storage for queue management and forwarding tables. The device's on-die termination (ODT) improves signal integrity on high-speed buses, reducing reflections and crosstalk. The 1.5V supply is compatible with common networking ASICs, and the compact TWBGA package allows dense board layouts. For optimal performance, route DDR3 traces with matched lengths and controlled impedance.

🏭

Industrial PCs

Industrial PCs require reliable, long-lifetime memory for control and monitoring applications. The IS43TR16256A-125KBL offers 4Gbit capacity and 1600MT/s speed, supporting demanding industrial software. Its 0°C to +95°C operating temperature range suits typical industrial environments, and the 1.5V standard voltage ensures compatibility with industrial-grade chipsets. The device's self-refresh mode reduces power during idle periods, which is beneficial for energy-efficient designs. For harsh environments, consider the industrial temperature variant IS43TR16256A-125KBLI.

🖥️

High-Performance Computing Modules

The IS43TR16256A-125KBL is used in compute modules and accelerators where high memory bandwidth is critical. Its 1600MT/s data rate and 16-bit interface provide fast data transfer for parallel processing tasks. The device's low latency (CL=11) reduces memory access delays, improving overall system performance. The 96-TWBGA package supports high-density board designs, and the 1.5V operation is standard for DDR3-based compute platforms. For multi-channel configurations, multiple devices can be used to increase bandwidth, but careful attention to signal integrity and power delivery is required.

📺

Consumer Electronics

In consumer devices like smart TVs, set-top boxes, and gaming consoles, the IS43TR16256A-125KBL provides main memory for operating systems and applications. Its 4Gbit capacity supports multitasking and media playback, while the 1600MT/s speed ensures smooth performance. The 1.5V supply is compatible with consumer-grade SoCs, and the compact TWBGA package enables slim device designs. The device's low power consumption in self-refresh mode extends battery life in portable devices. For cost-sensitive designs, consider alternative DDR3 parts from Samsung or Micron.

📡

Telecommunications Infrastructure

The IS43TR16256A-125KBL is used in base stations, switches, and telecom equipment for buffering and data processing. Its high speed and density support the large data volumes in telecom networks. The device's on-die termination and programmable latency allow fine-tuning for specific system requirements. The 1.5V operation is standard in telecom designs, and the 96-TWBGA package is suitable for high-reliability applications. For extended temperature requirements, the industrial variant IS43TR16256A-125KBLI is recommended. Proper ESD protection and power filtering are essential in this environment.

What is the memory size of IS43TR16256A-125KBL?
The IS43TR16256A-125KBL is a 4Gbit DDR3 SDRAM organized as 256M x 16. According to the ISSI datasheet, it provides 4Gbit of memory density with a 16-bit I/O width, suitable for applications requiring high-capacity volatile storage.
What is the operating voltage of IS43TR16256A-125KBL?
The IS43TR16256A-125KBL operates at a standard voltage of 1.5V for both VDD and VDDQ, with a tolerance of ±0.075V. This is the standard DDR3 voltage level, ensuring compatibility with typical DDR3 memory controllers.
What is the data rate of IS43TR16256A-125KBL?
The IS43TR16256A-125KBL supports a data rate of 1600MT/s, corresponding to an 800 MHz clock frequency. This high-speed data transfer capability makes it suitable for bandwidth-intensive applications such as networking and computing.
What package is IS43TR16256A-125KBL available in?
The IS43TR16256A-125KBL is available in a 96-ball TWBGA (9x13mm) package. This compact surface-mount package is designed for space-constrained PCB layouts and provides good thermal and electrical performance.
What is the CAS latency of IS43TR16256A-125KBL?
The IS43TR16256A-125KBL has a CAS latency of 11 (CL=11) at 1600MT/s. This latency setting is programmable and can be adjusted via the mode register to optimize performance for specific system requirements.
Is IS43TR16256A-125KBL RoHS compliant?
Yes, the IS43TR16256A-125KBL is RoHS compliant. According to the ISSI datasheet and distributor listings, this component meets the Restriction of Hazardous Substances directive, making it suitable for use in environmentally sensitive applications.
What is the difference between IS43TR16256A-125KBL and IS43TR16256AL-125KBL?
The IS43TR16256A-125KBL operates at 1.5V standard voltage, while the IS43TR16256AL-125KBL is a low-voltage version operating at 1.35V (DDR3L). Both are 4Gbit DDR3 SDRAM in the same 96-TWBGA package, but the 'L' variant is backward compatible with 1.5V and offers lower power consumption.
Can IS43TR16256A-125KBL be used in automotive applications?
The IS43TR16256A-125KBL is not specifically rated for automotive applications; its operating temperature range is 0°C to +95°C (Tc). For automotive-grade DDR3, consider ISSI's AEC-Q100 qualified variants, such as IS43TR16256A-125KBLI, which may have extended temperature ranges.
What is the price of IS43TR16256A-125KBL?
As of 2026-08-19, the price of IS43TR16256A-125KBL varies by quantity and distributor. At DigiKey, the unit price is approximately $12.50, with volume discounts reducing it to around $8.10 at 1000 pieces. Prices are subject to change and availability.
Where can I buy IS43TR16256A-125KBL?
IS43TR16256A-125KBL is available from major distributors including DigiKey, Mouser, and Octopart. You can purchase it directly from these online platforms, which offer real-time inventory and pricing. It is also listed on XAIPART for procurement.
What is the lead time for IS43TR16256A-125KBL?
The lead time for IS43TR16256A-125KBL is typically 4-6 weeks from ISSI, depending on order quantity and distributor stock. Distributors like DigiKey often have stock available for immediate shipment, as indicated by 'ships today' on their product page.
Is IS43TR16256A-125KBL in stock?
Yes, IS43TR16256A-125KBL is in stock at major distributors. DigiKey lists it as 'ships today', and Mouser shows inventory. For real-time stock levels, check the distributor websites directly.
What is the best drop-in replacement for IS43TR16256A-125KBL?
The best drop-in replacement for IS43TR16256A-125KBL is the IS43TR16256B-125KBL from ISSI, which shares the same 96-TWBGA package and pinout. Other pin-compatible options include the IS43TR16256AL-125KBL (low-voltage) and Micron's MT41K256M16TW-093:P, but verify pin compatibility before substitution.
Can MT41K256M16TW-093:P replace IS43TR16256A-125KBL?
Yes, the Micron MT41K256M16TW-093:P is a functional equivalent to IS43TR16256A-125KBL, both being 4Gbit DDR3 SDRAM in a 96-ball FBGA package. However, the MT41K256M16TW-093:P is a DDR3L device operating at 1.35V, while the IS43TR16256A-125KBL operates at 1.5V. Verify pin compatibility and voltage requirements before replacement.
What are the key specifications of IS43TR16256A-125KBL that engineers should know?
The IS43TR16256A-125KBL is a 4Gbit DDR3 SDRAM with a 256M x 16 organization, operating at 1.5V and supporting 1600MT/s data rates. It features a CAS latency of 11, burst length of 8, and is packaged in a 96-TWBGA (9x13mm). It includes on-die termination, auto-refresh, and self-refresh modes, making it suitable for high-performance embedded and networking applications.

Données de référence d'ingénierie pour IS43TR16256A-125KBL — comparaison, recommandations de conception et informations de conformité.

Guide de sélection

Choose the IS43TR16256A-125KBL when you need a standard 1.5V DDR3 SDRAM with 4Gbit density and 1600MT/s speed in a 96-TWBGA package. It is ideal for embedded systems, networking, and industrial PCs where 1.5V operation is required. If you need lower power consumption, consider the IS43TR16256AL-125KBL (DDR3L at 1.35V) which is backward compatible with 1.5V. For industrial temperature ranges, select the IS43TR16256A-125KBLI. Cross-brand alternatives like the Micron MT41K256M16TW-093:P offer similar performance but may have different voltage and latency characteristics; verify compatibility before substitution. For cost-sensitive designs, Samsung's K4B4G1646D-BCK00 is an alternative, but ensure pin compatibility.

Comparaison avec les alternatives

Paramètre Ce produit IS43TR16256B-125KBL IS43TR16256AL-125KBL MT41K256M16TW-093
Package 96-TWBGA (9x13) 96-TWBGA (9x13) 96-TWBGA (9x13) P: 96-FBGA (9x13)
Brand ISSI ISSI ISSI P: Micron
Memory Size 4Gbit 4Gbit 4Gbit P: 4Gbit
Data Rate 1600MT/s 1600MT/s 1600MT/s P: 1866MT/s
Supply Voltage 1.5V 1.5V 1.35V (DDR3L) P: 1.35V (DDR3L)
CAS Latency 11 11 11 P: 13
Operating Temperature 0°C to +95°C 0°C to +95°C 0°C to +95°C P: 0°C to +95°C
RoHS Compliant Compliant Compliant P: Compliant

Principaux différenciateurs

  • Standard 1.5V DDR3 operation (vs MT41K256M16TW-093:P)
  • Lower CAS latency (vs MT41K256M16TW-093:P)
  • Same-brand drop-in availability (vs MT41K256M16TW-093:P)

Notes de conception

The IS43TR16256A-125KBL requires a 1.5V VDD and VDDQ supply with ±0.075V tolerance. Use low-impedance decoupling capacitors (e.g., 0.1uF and 1uF) placed close to each VDD/VDDQ pin to minimize voltage ripple. Ensure the power plane has low inductance and adequate copper pour to handle transient currents during read/write operations.

For DDR3 routing, maintain controlled impedance (typically 50 ohms single-ended, 100 ohms differential) for DQ, DQS, and address/command lines. Match trace lengths within ±20 mils for data groups and ±100 mils for address/command to ensure signal integrity. Follow the layout guidelines in the ISSI datasheet for TWBGA package to avoid crosstalk and reflections.

The IS43TR16256A-125KBL has a maximum operating temperature of +95°C (Tc). Ensure adequate airflow or heatsinking in high-ambient-temperature environments. The 96-TWBGA package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values. For industrial applications, consider the -I variant with extended temperature range.

Informations de conformité

RoHS
Compliant
REACH
Unknown
AEC-Q100
Sans plomb
Sans halogène
Unknown
Minerais de conflit
Unknown

RoHS compliant per distributor listings. Not AEC-Q100 qualified; industrial temperature variant available.

Données vérifiées le : 2026-08-19 — données vérifiées et sélectionnées par l'équipe d'ingénierie composants de XAIPART

Recherches associées

IS43TR16256A-125KBL datasheet IS43TR16256A-125KBL price IS43TR16256A-125KBL buy IS43TR16256A-125KBL equivalent IS43TR16256A-125KBL vs MT41K256M16TW-093:P 4Gb DDR3 SDRAM 256Mx16 96-TWBGA DDR3 ISSI DDR3 memory DDR3 1600MT/s 1.5V IS43TR16256A-125KBL pinout

Composants & termes associés

ISSI IS43TR16256A-125KBL DDR3 SDRAM SDRAM Memory IC 4Gbit 256M x 16 1600MT/s 800 MHz 96-TWBGA TWBGA BGA 1.5V CAS latency RoHS IS43TR16256B-125KBL IS43TR16256AL-125KBL MT41K256M16TW-093:P Micron Embedded systems Networking
Guides techniques associés
IS43TR16256A-125KBL SDRAM DDR3 4 Gb : caractéristiques, guide de conception et alternatives
Le IS43TR16256A-125KBL est une SDRAM DDR3 de 4 Gbit (256Mx16) d'ISSI, 1600 MT/s, 1,5 V, 96-TWBGA. Cycle de vie actif, 99 999 unités en stock
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