K4A8G165WB-BIWE - 8Gb DDR4 SDRAM 3200Mbps | Samsung
Артикул: K4A8G165WB-BIWE ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $16.62 | $16,62 |
| 10 | $16.02 | $160,20 |
| 100 | $15.42 | $1.542,00 |
| 500 | $14.82 | $7.410,00 |
| 1.000 | $14.22 | $14.220,00 |
K4A8G165WB-BIWE Обзор
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, effectively doubling the data rate. It is the successor to DDR3 and offers higher speed, lower voltage (1.2V vs 1.5V), and improved power efficiency. DDR4 is a key component in the memory hierarchy, sitting between the CPU and storage, and is essential for system performance in servers, PCs, and embedded devices.
Key features of the K4A8G165WB-BIWE include a density of 8Gb, a 16-bit I/O width, and a data rate of 3200 Mbps. The device supports on-die termination (ODT), programmable read/write latency, and burst lengths of 8 and 16. It also features auto-refresh and self-refresh modes for power saving. The 96-ball FBGA package ensures a compact footprint and excellent thermal performance.
Technically, the K4A8G165WB-BIWE is built on Samsung's advanced DRAM process technology, offering high cell density and low power consumption. It complies with JEDEC DDR4 standards, ensuring interoperability with a wide range of memory controllers. The device includes a temperature-compensated self-refresh (TCSR) feature that adjusts refresh rate based on die temperature, enhancing reliability in harsh environments.
Typical applications include high-performance computing, networking equipment, industrial automation, and automotive infotainment systems. Its wide temperature range and high speed make it ideal for edge computing and AI inference platforms where memory bandwidth is critical.
When designing with this device, ensure proper decoupling capacitors are placed near the power pins to minimize noise. Also, follow the JEDEC DDR4 layout guidelines for signal integrity, especially for high-speed data lines.
Аналоги без доработки для K4A8G165WB-BIWE — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с K4A8G165WB-BIWE (тот же форм-фактор и посадочное место) — отличается по Package, Data Rate, Interface, Refresh, Supply Voltage.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
K4A8G165WC-BIWE
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
K4A8G165WG-BIWE
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MT40A1G8WE-075E
✅ Прямая замена✓ В наличии
$11.9 / шт.
Открыть даташит →H5AN8G6NDJR-UHC
✅ Прямая замена✓ В наличии
$34.6 / шт.
Открыть даташит →NT6AN8T1G43HZ
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
K4A8G165WB-BIWE Максимальные параметры и электрические характеристики
| Тип памяти | DDR4 SDRAM |
| Density | 8 Gb |
| Организация памяти | 512M x 16 |
| Скорость передачи данных | 3200 Mbps |
| Напряжение питания | 1.2 V |
| Рабочая температура | -40°C to +95°C |
| Корпус | 96-ball FBGA |
| Интерфейс | Parallel |
| Burst Length | 8, 16 |
| Refresh | Auto-refresh, Self-refresh |
| On-Die Termination | Yes |
| RoHS | Compliant |
| Тип монтажа | Surface Mount |
| Количество выводов | 96 |
Конфигурация выводов K4A8G165WB-BIWE
| Контакт A1 | VDD — Power supply |
| Контакт A2 | DQ0 — Data input/output 0 |
| Контакт A3 | DQ1 — Data input/output 1 |
| Контакт B1 | VSS — Ground |
| Контакт B2 | DQ2 — Data input/output 2 |
| Контакт B3 | DQ3 — Data input/output 3 |
| Контакт C1 | VDDQ — Power supply for output |
| Контакт C2 | DQ4 — Data input/output 4 |
| Контакт C3 | DQ5 — Data input/output 5 |
| Контакт D1 | VSSQ — Ground for output |
| Контакт D2 | DQ6 — Data input/output 6 |
| Контакт D3 | DQ7 — Data input/output 7 |
Типичное применение
K4A8G165WB-BIWE подходит для 6 применениеs: High-Performance Computing, Networking Equipment, Industrial Automation, Automotive Infotainment, Edge AI and Machine Learning, Data Center Servers.
High-Performance Computing
The K4A8G165WB-BIWE delivers 3200 Mbps data rate and 8Gb density, making it ideal for HPC systems that require high memory bandwidth for complex simulations and data analytics. Its 1.2V operation reduces power consumption, and the wide temperature range ensures reliability in dense server environments. The 96-ball FBGA package allows for compact PCB layouts, enabling high-density memory modules.
Рекомендуется
Networking Equipment
In networking switches and routers, the K4A8G165WB-BIWE provides the fast, reliable memory needed for packet buffering and routing tables. Its 3200 Mbps speed ensures low latency, while the 8Gb capacity supports large forwarding databases. The industrial temperature range (-40°C to +95°C) makes it suitable for outdoor and harsh environment networking gear.
Рекомендуется
Industrial Automation
The K4A8G165WB-BIWE is well-suited for industrial automation controllers that require high-speed data processing and reliability. Its wide temperature range and 1.2V low-power operation make it ideal for factory floor environments. The 512M x 16 organization provides ample memory for real-time control algorithms and data logging.
Рекомендуется
Automotive Infotainment
For automotive infotainment systems, the K4A8G165WB-BIWE offers the high bandwidth needed for navigation, multimedia, and driver assistance features. Its -40°C to +95°C temperature range meets automotive requirements, and the 8Gb density supports complex user interfaces. The 1.2V supply helps reduce overall vehicle power consumption.
Рекомендуется
Edge AI and Machine Learning
The K4A8G165WB-BIWE is ideal for edge AI devices that need to process neural networks locally. Its 3200 Mbps data rate provides the memory bandwidth required for inference tasks, while the 8Gb capacity supports large models. The low power consumption of 1.2V is crucial for battery-powered edge devices.
Рекомендуется
Data Center Servers
In data center servers, the K4A8G165WB-BIWE provides high-density, high-speed memory for virtualization and cloud computing. Its 8Gb density allows for large memory pools, and the 3200 Mbps speed ensures fast data access. The 1.2V operation reduces power and cooling costs, making it a cost-effective solution for hyperscale data centers.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для K4A8G165WB-BIWE — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | K4A8G165WC-BIWE | K4A8G165WG-BIWE | MT40A1G8WE-075E | H5AN8G6NDJR-UHC | NT6AN8T1G43HZ |
|---|---|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | SK Hynix | Nanya Technology |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Ключевые отличия
- Wide temperature range (против MT40A1G8WE-075E)
- High speed 3200 Mbps (против NT6AN8T1G43HZ)
- Proven B-die architecture (против H5AN8G6NDJR-UHC)
Заметки по проектированию
For high-speed DDR4 signals, maintain controlled impedance of 40-50 ohms for data lines and 39 ohms for address/command lines. Use ground planes and minimize vias to reduce signal integrity issues. Follow JEDEC layout guidelines for DDR4 routing.
Decouple the VDD and VDDQ pins with 0.1uF and 1uF capacitors placed as close as possible to the device. Use a dedicated power plane for VDD and VDDQ to minimize noise. Ensure the power supply can handle peak current demands during refresh operations.
The K4A8G165WB-BIWE operates up to +95°C, but for reliable operation, ensure adequate airflow or heatsinking in high-temperature environments. The 96-ball FBGA package has a thermal resistance that should be considered in the design. Use thermal vias under the package to improve heat dissipation.
Информация о соответствии
RoHS compliant per LCSC listing. AEC-Q100 not applicable for DRAM.
