MT40A512M16TD-062E AUT:R - 8Gbit DDR4 SDRAM | Micron
Артикул: MT40A512M16TD-062E AUT:R ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $5.4 | $5,40 |
| 10 | $4.95 | $49,50 |
| 100 | $4.55 | $455,00 |
| 500 | $4.2 | $2.100,00 |
| 1.000 | $3.9 | $3.900,00 |
MT40A512M16TD-062E AUT:R Обзор
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the DDR DRAM family, a volatile memory technology that stores each bit in a capacitor-based cell refreshed on a regular cycle. In the memory hierarchy, it sits between CPU caches and storage, serving as the main working memory in automotive computing, industrial control, and networking systems.
Key features of this device include the 8 Gbit monolithic die density, a x16 organization that simplifies 16-bit or 32-bit bus designs without byte-lane splitting, and the 1.2 V core supply that reduces power versus the 1.5 V DDR3 generation. The -062E speed grade supports DDR4-1600 class operation with 19 ns access latency.
Architecturally, the part is a parallel-interface SDRAM with bank groups, on-die termination support, and an automotive temperature operating range denoted by the AUT grade in the part number. The -R suffix designates tape-and-reel packaging for automated surface-mount assembly.
Typical applications include automotive infotainment and ADAS domain controllers, telematics gateways, and industrial HMI or edge-AI modules that require qualified DRAM with long-term supply.
Design consideration: implement DDR4 controller training (write leveling, read training) and follow the Micron system design guidelines for fly-by routing and VTT termination on address/command lines.
This page synthesizes distributor availability data, drop-in alternatives, and practical design notes not consolidated in the manufacturer datasheet.
Аналоги без доработки для MT40A512M16TD-062E AUT:R — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с MT40A512M16TD-062E AUT:R (тот же форм-фактор и посадочное место) — отличается по Package, Memory Type, Interface, Clock Frequency, Memory Size.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
MT40A512M16LY-062E AAT:E
✅ Прямая замена✓ В наличии
$9.2 / шт.
Открыть даташит →MT40A512M16AD-062E
✅ Прямая замена✓ В наличии
$9.2 / шт.
Открыть даташит →MT40A512M16JY-083E
✅ Прямая замена✓ В наличии
$5.85 / шт.
Открыть даташит →K4A4G165WG-BCWE
✅ Прямая замена✓ В наличии
$16.9 / шт.
Открыть даташит →NT5AD512M16C4-JRU
✅ Прямая замена✓ В наличии
$83 / шт.
Открыть даташит →MT40A512M16TD-062E AUT:R Максимальные параметры и электрические характеристики
| Тип памяти | DDR4 SDRAM |
| Размер памяти | 8 Gbit |
| Организация памяти | 512M x 16 |
| Интерфейс | Parallel |
| Clock Frequency / Data Rate | 1.6 GHz |
| Access Time | 19 ns |
| Напряжение питания | 1.2 V |
| Корпус | 96-FBGA (7.5 x 13 mm) |
| Тип монтажа | Surface Mount |
| Automotive Qualification | AEC-Q100 (AUT grade) |
| Packaging Suffix | -R (Tape & Reel) |
| Speed Grade | -062E |
| Technology Family | DDR4 SDRAM (SDR/DDR family) |
Руководство по цоколевке MT40A512M16TD-062E AUT:R в корпусе 96-fbga (7.5 x 13 mm)
Цоколевка для MT40A512M16TD-062E AUT:R (корпус 96-fbga (7.5 x 13 mm)). Эта цифровая ИС включает выводы GPIO, интерфейсы связи (UART, SPI, I2C) и выводы питания. Обратитесь к техническому описанию производителя для альтернативных функций выводов и вариантов конфигурации. Необходимо для проектирования встраиваемых систем и трассировки печатных плат.
Нет подробных данных о распиновке для MT40A512M16TD-062E AUT:R.
Обратитесь к даташиту для полной конфигурации выводов.
Типичное применение
MT40A512M16TD-062E AUT:R подходит для 6 применениеs: Automotive Infotainment, ADAS Domain Controllers, Telematics and Gateways, Industrial HMI and Edge AI, Networking and Communication Equipment, Test and Measurement Instruments.
Automotive Infotainment
The MT40A512M16TD-062E AUT:R fits automotive infotainment head units and cluster controllers that require AEC-Q100-qualified DDR4 behind an SoC such as an NXP i.MX or Renesas R-Car. Its 8 Gbit density in a single x16 device supports graphics frame buffers and navigation databases, while the 1.2 V operation reduces rail power versus DDR3. Placed on a fly-by-routed address bus with on-die termination, the -062E speed grade sustains DDR4-1600 class bandwidth for smooth UI rendering. The AUT grade and tape-and-reel -R packaging align with high-volume automotive SMT assembly lines.
Рекомендуется
ADAS Domain Controllers
ADAS perception controllers process camera, radar, and lidar streams, demanding high-bandwidth volatile memory with automotive qualification. The MT40A512M16TD-062E AUT:R provides 8 Gbit of DDR4 storage in one 512M x 16 device; two devices form a 32-bit bus delivering DDR4-1600 class aggregate bandwidth for sensor fusion workloads. The 19 ns access time and AUT qualification support functional-safety programs requiring traceable, qualified DRAM. Designers should budget for controller read/write training and follow Micron's DDR4 system design guidelines for signal integrity at speed.
Рекомендуется
Telematics and Gateways
Vehicle telematics units and connectivity gateways store network stacks, security payloads, and logging buffers in DRAM. The MT40A512M16TD-062E AUT:R's automotive grade meets the qualification demands of under-dash and TCU environments, while 1.2 V DDR4 keeps standby and active power within tight automotive rail budgets. Its x16 organization allows a single-device 16-bit memory subsystem in cost-optimized gateway designs. The 96-ball FBGA (7.5 x 13 mm) footprint conserves PCB area on compact telematics boards where routing channels are limited.
Рекомендуется
Industrial HMI and Edge AI
Industrial human-machine interfaces and edge-AI inference modules benefit from the MT40A512M16TD-062E AUT:R's overspecification relative to commercial requirements: the automotive-qualified device provides extra margin in high-vibration, wide-temperature factory environments. The 8 Gbit capacity accommodates model weights and frame buffers for lightweight CNN inference, and the -062E grade keeps memory bandwidth sufficient for real-time dashboard rendering. Using a single x16 DDR4 device simplifies memory controller configuration and reduces BOM count versus multiple x8 parts on the same board.
Рекомендуется
Networking and Communication Equipment
Enterprise access points, industrial switches, and 5G small-cell equipment use DDR4 x16 devices for packet buffering and control-plane memory. The MT40A512M16TD-062E AUT:R supplies 8 Gbit at DDR4-1600 class data rates, giving deterministic buffer memory alongside the processor's packet engines. Its 1.2 V core aligns with modern networking power budgets, and the 96-FBGA package suits the dense multilayer stackups typical of switch fabrics. The automotive qualification is a bonus for industrial-networking variants of the same platform hardware.
Рекомендуется
Test and Measurement Instruments
Bench instruments and data-acquisition systems require large, fast capture buffers. The MT40A512M16TD-062E AUT:R offers 8 Gbit of buffering per device, letting a 32-bit-wide pair capture extended sample streams at sustained DDR4 bandwidth. The 19 ns access time and -062E grade support high-throughput streaming into post-processing blocks, while the qualified AUT build adds reliability margin for instruments expected to run continuous duty cycles. Tape-and-reel packaging supports the mid-volume SMT assembly runs typical of instrument production.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для MT40A512M16TD-062E AUT:R — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | MT40A512M16LY-062E AAT:E | MT40A512M16AD-062E | MT40A512M16JY-083E | K4A4G165WG-BCWE | NT5AD512M16C4-JRU |
|---|---|---|---|---|---|---|
| Package | 96-FBGA (7.5 x 13 mm) | 96-FBGA (7.5 x 13 mm) - same | 96-FBGA - same | 96-FBGA - same | 96-FBGA - same footprint | 96-FBGA - same footprint |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics | Nanya Technology |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 256M x 16 | 512M x 16 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Automotive Qualification | Yes (AUT, AEC-Q100) | No (AAT commercial grade) | No (standard grade) | No (standard grade) | No (standard grade) | No (standard grade) |
Ключевые отличия
- Automotive AEC-Q100 qualified build (против MT40A512M16LY-062E AAT:E)
- 8 Gbit density in a single x16 device (против K4A4G165WG-BCWE)
- Faster -062E speed grade (против MT40A512M16JY-083E)
Заметки по проектированию
DDR4 fly-by routing: terminate address/command/control lines to VTT (0.6 V) with series 22-33 ohm resistors near the controller, and route DQ/DQS/DM as length-matched groups per byte lane. Follow Micron's DDR4 system design guidelines for the 96-FBGA x16 footprint; keep DQ skews within +/-25 mil per byte lane and clock-to-address skew per the -062E timing budget. Reference Micron application notes on DDR4 write leveling and read training for controller tuning.
Estimated: at 1.2 V DDR4-1600 class operation, plan the VDD rail per the datasheet IDD specifications for your activity factor; VPP (2.5 V nominal) powers the cell array and should be decoupled separately. Use a dedicated VTT termination regulator (e.g., synchronous sink-source LDO) sized for peak termination current, plus bulk and high-frequency decoupling at each VDD/VDDQ ball group. Confirm exact IDD figures in the Micron datasheet rather than using generic DDR4 estimates.
The 96-ball FBGA (7.5 x 13 mm) requires via-in-pad or dogbone fanout on a minimum 4-layer stack; dedicate internal layers to solid VDD/VSS planes to minimize loop inductance. Keep the DRAM within 2 inches of the controller for DDR4-1600 class operation without advanced equalization. Ensure the land pattern follows Micron's recommended PCB footprint, and inspect with X-ray/AOI after reflow since BGA joints are hidden.
Do not mix AUT-qualified and commercial-grade (AAT/standard) DDR4 on the same automotive ECU build - maintain qualification traceability. Confirm the exact -062E speed grade timing set in the Micron datasheet against your memory controller's supported DDR4 speed bins; assuming a generic 'DDR4-1600' profile can miss tRFC or tFAW requirements at 8 Gbit density, which is longer than lower-density dies.
Информация о соответствии
AEC-Q100 automotive qualification is indicated by the AUT grade suffix in the part number and by Arrow's listing description ('Automotive AEC-Q100'). RoHS/REACH/lead-free declarations were not found in the retrieved data; confirm via Micron's product compliance documentation.
