2EDF9275FXUMA1 vs 1EDN7116GXTMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng 2EDF9275FXUMA1 sa pamamagitan ng Infineon at 1EDN7116GXTMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
1EDN7116GXTMA1 - 200V Single-Channel GaN Gate Driver IC | Infineon
1EDN7116GXTMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | 2EDF9275FXUMA1 | 1EDN7116GXTMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | Power MOSFET Drivers | Power MOSFET Drivers |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Driver Configuration | Half-Bridge (High Side + Low Side) | Non-inverting, single low-side |
| Number of Drivers | 2 | 1 |
| Bilang ng Outputs | 2 | — |
| Source Current | 4 A | — |
| Sink Current | 8 A | — |
| Propagation Delay (Typ.) | 37 ns | — |
| Channel-to-Channel Matching | [DATA_NEEDED: channel-to-channel matching] | — |
| Common-Mode Transient Immunity (CMTI) | 150 V/ns | — |
| Isolation Type | Functional (Galvanic, Coreless Transformer) | — |
| Input Logic Compatibility | CMOS / TTL (Non-Inverting) | — |
| Supply Voltage Range | [DATA_NEEDED: VCC range] | — |
| Hanay ng Temperature na Operasyon | -40 °C to +125 °C | -40 °C to +125 °C |
| Oras ng Pagtaas | [DATA_NEEDED: rise time] | — |
| Time ng Pagbaba | 4.5 ns | — |
| Style ng Pagpapasok | SMD/SMT | — |
| Packhaging | PG-DSO-16-11 (150-mil DSO-16) | PG-VSON-10-4 (3.0 mm × 3.0 mm) |
| Packaging | Cut Tape, MouseReel, Reel | — |
| Optimized For | CoolSiC™ MOSFETs (Wide-Bandgap) | — |
| Tindminan RoHS | Compliant | Compliant |
| REACH Status | [DATA_NEEDED: REACH status] | — |
| Fungsi | — | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs |
| Peak Source Current | — | 2 A (typ) |
| Peak Sink Current | — | 4 A (typ) |
| Input Type | — | Truly Differential Input (TDI) |
| Supply Voltage (VCC) | — | 4.5 V to 5.5 V |
| Switch-Node Blocking Voltage | — | 200 V (max) |
| Propagation Delay (Typ) | — | 9 ns |
| Rise Time (Typ) | — | 3 ns |
| Fall Time (Typ) | — | 3 ns |
| Quiescent Current (Typ) | — | 0.6 mA |
| Miller Clamp | — | Integrated, active |
| UVLO | — | Yes (VCC and gate-rail monitored) |
| Uri ng Pagpapasok | — | Surface Mount |
| Level ng MSL | — | MSL3 |
| Target Switch Technology | — | GaN HEMT (CoolGaN) or Si MOSFET |