2EDF9275FXUMA1 vs 1EDN7116GXTMA1 比較

詳細並排比較 2EDF9275FXUMA1 由 Infineon 與 1EDN7116GXTMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
2EDF9275FXUMA1 2EDF9275FXUMA1 - 4A/8A Isolated Gate Driver | Infineon

2EDF9275FXUMA1 - 4A/8A Isolated Gate Driver | Infineon

2EDF9275FXUMA1 ✓ 啟用中

規格比較

參數 2EDF9275FXUMA1 1EDN7116GXTMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Driver Configuration Half-Bridge (High Side + Low Side) Non-inverting, single low-side
Number of Drivers 2 1
輸出數量 2 —
Source Current 4 A —
Sink Current 8 A —
Propagation Delay (Typ.) 37 ns —
Channel-to-Channel Matching [DATA_NEEDED: channel-to-channel matching] —
Common-Mode Transient Immunity (CMTI) 150 V/ns —
Isolation Type Functional (Galvanic, Coreless Transformer) —
Input Logic Compatibility CMOS / TTL (Non-Inverting) —
Supply Voltage Range [DATA_NEEDED: VCC range] —
工作溫度範圍 -40 °C to +125 °C -40 °C to +125 °C
上升時間 [DATA_NEEDED: rise time] —
下降時間 4.5 ns —
安裝方式 SMD/SMT —
封裝 PG-DSO-16-11 (150-mil DSO-16) PG-VSON-10-4 (3.0 mm × 3.0 mm)
Packaging Cut Tape, MouseReel, Reel —
Optimized For CoolSiC™ MOSFETs (Wide-Bandgap) —
RoHS 狀態 Compliant Compliant
REACH Status [DATA_NEEDED: REACH status] —
功能 — Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs
Peak Source Current — 2 A (typ)
Peak Sink Current — 4 A (typ)
Input Type — Truly Differential Input (TDI)
Supply Voltage (VCC) — 4.5 V to 5.5 V
Switch-Node Blocking Voltage — 200 V (max)
Propagation Delay (Typ) — 9 ns
Rise Time (Typ) — 3 ns
Fall Time (Typ) — 3 ns
Quiescent Current (Typ) — 0.6 mA
Miller Clamp — Integrated, active
UVLO — Yes (VCC and gate-rail monitored)
安裝類型 — Surface Mount
MSL 等級 — MSL3
Target Switch Technology — GaN HEMT (CoolGaN) or Si MOSFET

資料表與資源

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