AFT26P100-4WSR3 vs MRF8P26080HSR3 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng AFT26P100-4WSR3 sa pamamagitan ng NXP Semiconductors at MRF8P26080HSR3 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
MRF8P26080HSR3 - 14W, 2.6GHz W-CDMA/LTE RF Power MOSFET | NXP
MRF8P26080HSR3 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | AFT26P100-4WSR3 | MRF8P26080HSR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Product Family | Airfast RF Power LDMOS | — |
| Uri ng Transistor | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS, Dual) | N-Channel Enhancement-Mode Lateral MOSFET |
| Configuration | Symmetrical Doherty, Dual-section | — |
| Frequency Range | 2496 MHz to 2690 MHz | 2500 MHz to 2700 MHz |
| Test Frequency | 2.69 GHz | — |
| Drain Voltage (Vds) | 28 V (typical), 65 V (maximum rating) | — |
| Average Output Power | 22 W (Doherty) | — |
| Power Gain | 15.1 dB (typical at 200 mA) | — |
| Test Quiescent Current (Idq) | 200 mA | — |
| Packhaging | NI-780S-4 (NI-780S-6 variant), ceramic air-cavity | NI-780S-4 (ceramic, flange-mount, air-cavity) |
| Uri ng Pagpapasok | Surface Mount / Chassis Mount (bolt-down) | Through-hole flange-mount with screw attachment |
| Technology | LDMOS, lateral diffused | Gen8 LDMOS (Silicon, Lateral) |
| Operating Mode | Class AB / Doherty | — |
| Polarity | N-Channel | — |
| Level ng MSL | [DATA_NEEDED: MSL rating] | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | — |
| Lead-Free | [DATA_NEEDED: lead-free status] | — |
| Average Output Power (P3dB) | — | 14 W (W-CDMA, single-carrier) |
| Peak Output Power (CW) | — | 80 W |
| Drain-Source Voltage (VDSS max) | — | 65 V |
| Operating Drain Voltage (VDD) | — | 28 V nominal |
| Test Mode | — | Typical Doherty Single-Carrier W-CDMA |
| Application Class | — | Class AB or Class C capable |
| Modulation Formats | — | W-CDMA, LTE, OFDM, multi-carrier |
| Lead Finish | — | Gold-plated (NiPdAu) |
| Lead-Free / RoHS | — | Compliant |
| Hanay ng Temperature na Operasyon | — | -40C to +150C (junction) |