AFT26P100-4WSR3 vs MRF8P26080HSR3 比較
詳細並排比較 AFT26P100-4WSR3 由 NXP Semiconductors 與 MRF8P26080HSR3 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
NXP Semiconductors
MRF8P26080HSR3 - 14W, 2.6GHz W-CDMA/LTE RF Power MOSFET | NXP
MRF8P26080HSR3 ✓ 啟用中規格比較
| 參數 | AFT26P100-4WSR3 | MRF8P26080HSR3 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Product Family | Airfast RF Power LDMOS | — |
| 電晶體類型 | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS, Dual) | N-Channel Enhancement-Mode Lateral MOSFET |
| Configuration | Symmetrical Doherty, Dual-section | — |
| Frequency Range | 2496 MHz to 2690 MHz | 2500 MHz to 2700 MHz |
| Test Frequency | 2.69 GHz | — |
| Drain Voltage (Vds) | 28 V (typical), 65 V (maximum rating) | — |
| Average Output Power | 22 W (Doherty) | — |
| Power Gain | 15.1 dB (typical at 200 mA) | — |
| Test Quiescent Current (Idq) | 200 mA | — |
| 封裝 | NI-780S-4 (NI-780S-6 variant), ceramic air-cavity | NI-780S-4 (ceramic, flange-mount, air-cavity) |
| 安裝類型 | Surface Mount / Chassis Mount (bolt-down) | Through-hole flange-mount with screw attachment |
| Technology | LDMOS, lateral diffused | Gen8 LDMOS (Silicon, Lateral) |
| Operating Mode | Class AB / Doherty | — |
| Polarity | N-Channel | — |
| MSL 等級 | [DATA_NEEDED: MSL rating] | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | — |
| Lead-Free | [DATA_NEEDED: lead-free status] | — |
| Average Output Power (P3dB) | — | 14 W (W-CDMA, single-carrier) |
| Peak Output Power (CW) | — | 80 W |
| Drain-Source Voltage (VDSS max) | — | 65 V |
| Operating Drain Voltage (VDD) | — | 28 V nominal |
| Test Mode | — | Typical Doherty Single-Carrier W-CDMA |
| Application Class | — | Class AB or Class C capable |
| Modulation Formats | — | W-CDMA, LTE, OFDM, multi-carrier |
| Lead Finish | — | Gold-plated (NiPdAu) |
| Lead-Free / RoHS | — | Compliant |
| 工作溫度範圍 | — | -40C to +150C (junction) |