BSC027N04LSGATMA1 vs BSC059N04LS6ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC027N04LSGATMA1 sa pamamagitan ng Infineon at BSC059N04LS6ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC059N04LS6ATMA1 BSC059N04LS6ATMA1 - 40V 59A OptiMOS 6 N-MOSFET | Infineon

BSC059N04LS6ATMA1 - 40V 59A OptiMOS 6 N-MOSFET | Infineon

BSC059N04LS6ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC027N04LSGATMA1 BSC059N04LS6ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Product Family OptiMOS 3 —
Uri ng Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V 40 V
Gate-Source Voltage (VGS) max ±20 V +/-20 V
Continuous Drain Current (ID) at Ta=25°C 24 A —
Continuous Drain Current (ID) at Tc=25°C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max @ VGS=10V 2.7 mΩ —
Power Dissipation (Ta=25°C) 2.5 W —
Pwersang Pinahihigpit (TC=25°C) 83 W —
Hanay ng Temperature na Operasyon -55°C to +150°C -55C to +150C
Packhaging PG-TDSON-8-1 (SuperSO8 5x6) PG-TDSON-8-6 (SuperSO8 5x6 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Technology OptiMOS 3 (Trench) OptiMOS 6 (N-channel MOSFET)
Level ng MSL 1 —
Tindminan RoHS Compliant Compliant
Wala sa Halogen Yes —
Continuous Drain Current (ID) at TA=25C — 17 A
Continuous Drain Current (ID) at TC=25C — 49 A
Pulsed Drain Current (ID,pulse) at TC=25C — 59 A
On-Resistance RDS(on) max — 5.9 mOhm at VGS=10 V
Total Power Dissipation at TA=25C — 3 W
Total Power Dissipation at TC=25C — 38 W
Diode Continuous Forward Current (IS) — 38 A at TC=25C
Diode Pulse Current (IS,pulse) — 236 A at TC=25C
Lead-Free — Yes

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