BSL308CH6327XTSA1 vs BSP92PH6327XTSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSL308CH6327XTSA1 sa pamamagitan ng Infineon at BSP92PH6327XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSL308CH6327XTSA1 - 30V 2.3A Dual N/P MOSFET Array | Infineon
BSL308CH6327XTSA1 ✓ NakahandaInfineon
BSP92PH6327XTSA1 - P-Channel 250V 260mA MOSFET SOT-223 | Infineon
BSP92PH6327XTSA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSL308CH6327XTSA1 | BSP92PH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™ low-voltage power MOSFETs | OptiMOS P-Channel Small-Signal Power MOSFET |
| Configuration | Complementary dual MOSFET (1 N-channel + 1 P-channel) | — |
| Packhaging | PG-TSOP6-6 (TSOP-6, 6 pins) | PG-SOT223-4 (SOT-223-4) |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current - N-channel (ID, N-ch) | 2.3 A | — |
| Continuous Drain Current - P-channel (ID, P-ch) | 2 A | — |
| Total Power Dissipation (Ptot) | 500 mW | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th) typical and min/max] |
| On-State Resistance N-channel (RDS(on) @ VGS=10V) | [DATA_NEEDED: RDS(on) N-ch] | — |
| On-State Resistance P-channel (RDS(on) @ VGS=10V) | [DATA_NEEDED: RDS(on) P-ch] | — |
| Total Gate Charge (Qg) | 5 nC @ 10 V | — |
| Input Capacitance (Ciss) | 18 pF | — |
| Hanay ng Temperature na Operasyon | -55 °C to +150 °C | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | 1 (per JEDEC J-STD-020) | 1 (unlimited) |
| Automotive Qualified | Yes (per Infineon part-number suffix, automotive grade) | — |
| Tindminan RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Wala sa Halogen | Yes (per Infineon product family convention) | — |
| Uri ng Transistor | — | P-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (VDS) | — | -250 V |
| Continuous Drain Current (ID) | — | -260 mA (Ta) |
| Power Dissipation (PD) | — | 1.8 W (Ta) |
| Channel Polarity | — | P-Channel |
| Temperature na Operasyon | — | -55C to +150C (Tj) |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=-10V] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Lead-Free / RoHS | — | Yes / Compliant |
| Bilang ng Pin | — | 4 (Gate, Drain, Drain, Source) |