BSL308PEH6327XTSA1 vs BSL215CH6327XTSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSL308PEH6327XTSA1 sa pamamagitan ng Infineon at BSL215CH6327XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSL215CH6327XTSA1 - 20V 1.5A N+P Complementary OptiMOS | Infineon
BSL215CH6327XTSA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSL308PEH6327XTSA1 | BSL215CH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | OptiMOS |
| FET Type | 2x P-Channel (Dual) | N-Channel and P-Channel Complementary Pair |
| Drain-Source Voltage (VDS) | -30 V | — |
| Continuous Drain Current (ID) | -2 A (Ta) | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| Packhaging | PG-TSOP6-6 (TSOT-23-6) | — |
| Configuration | Dual, common source | Half-bridge (1 N + 1 P) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | -55 C to +150 C (TJ) | -55C to +150C |
| Automotive Qualification | AEC-Q101 | — |
| Bilang ng Pins | 6 | — |
| Channel Mode | Enhancement | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V / 4.5V] | — |
| Tindminan RoHS | Compliant | Compliant |
| Drain-Source Voltage (V_DS) | — | 20 V |
| Continuous Drain Current (I_D) | — | 1.5 A |
| R_DS(on) Max @ V_GS=4.5V | — | 250 mOhm |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Power Dissipation (P_D) | — | 500 mW |
| Packhaging / Kaso | — | PG-TSOP6-6 (6-pin TSOP) |
| Technology | — | OptiMOS trench MOSFET |
| Level ng MSL | — | 1 (unlimited) |
| Lead-Free | — | Yes |