BSP316PH6327XTSA1 vs BSD235CH6327XTSA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSP316PH6327XTSA1 sa pamamagitan ng Infineon at BSD235CH6327XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSP316PH6327XTSA1 BSP316PH6327XTSA1 - P-Ch 100V 680mA MOSFET | Infineon | SOT-223

BSP316PH6327XTSA1 - P-Ch 100V 680mA MOSFET | Infineon | SOT-223

BSP316PH6327XTSA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSP316PH6327XTSA1 BSD235CH6327XTSA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type P-Channel —
Drain-to-Source Voltage (VDS) -100 V 20 V
Continuous Drain Current (ID) at TA=25C -680 mA —
Total Power Dissipation (Ptot) at TA=25C 1.8 W —
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=-10V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Packhaging PG-SOT223-4 (TO-261-4) —
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -55 C to +150 C (junction) -55 °C to +150 °C (junction)
Bilang ng Pins 3 + thermal tab —
Channel Mode Enhancement Enhancement
Technology SIPMOS (P-channel MOSFET) OptiMOS™ low-voltage
Tindminan RoHS Compliant Compliant (lead-free)
Level ng MSL 1 1
Packaging Tape & Reel (H6327 suffix) —
Manufacturer — Infineon Technologies
Part Family — OptiMOS™
Configuration — N+P complementary dual MOSFET
N-Channel Continuous Drain Current (ID) — 950 mA
P-Channel Continuous Drain Current (ID) — 530 mA (negative polarity)
Total Power Dissipation (Ptot) — 500 mW
Package Type — PG-SOT363-6-1 (SOT-363, 6-pin)
Polarity — N-channel + P-channel
Bilang ng Pin — 6

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