BSS606NH6327XTSA1 vs BSS87H6327FTSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSS606NH6327XTSA1 sa pamamagitan ng Infineon at BSS87H6327FTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | BSS606NH6327XTSA1 | BSS87H6327FTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS Small Signal/Power | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | 240 V |
| Continuous Drain Current (ID) | 3.2 A (Ta) | 260 mA (Ta) |
| Power Dissipation (PD) | 1 W (Ta) | 1 W (Ta) |
| On-Resistance (RDS(on)) | 60 mΩ max @ VGS=10 V | — |
| Packhaging | PG-SOT-89 (TO-243AA) | PG-SOT89-4-2 (SOT-89) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | [DATA_NEEDED: VGS(th) typical/min/max] |
| Temperature ng Junction na Operasyon | -55°C to +150°C | — |
| Qualification | Automotive (per family page) | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Level ng MSL | 1 (per SOT-89 family standard) | 1 (per JEDEC J-STD-020) |
| Reel Quantity | 1000 pcs | — |
| FET Type | — | N-Channel enhancement-mode |
| Drain-Source On-Resistance (RDS(on)) | — | 6 ohm max at VGS=10V |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| Hanay ng Temperature na Operasyon | — | -55C to +150C (junction) |
| Bilang ng Pin | — | 3 (Gate / Drain / Source) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Lead-Free / Pb-Free | — | Yes (Pb-free plating) |
| Process Technology | — | Vertical DMOS |