EP3SE260H780C3 vs EP3SE260H780C3N Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng EP3SE260H780C3 sa pamamagitan ng Intel at EP3SE260H780C3N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro EP3SE260H780C3 EP3SE260H780C3N
Brand Intel Intel
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle Aktibo Aktibo
Device Family Stratix III Enhanced (Stratix III E) —
Series EP3SE Stratix® III E
Logic Elements 255,000 —
Logic Array Blocks (LABs) 10200 —
Embedded Memory 16,672,768 bits (16.67 Mbit) —
User I/Os 488 488
Operating Voltage (Core) 0.9 V —
Operating Voltage (Auxiliary) 1.1 V —
Process Technology 65 nm CMOS 40 nm CMOS
Speed Grade C3 —
Temperature na Operasyon Commercial, 0C to +85C 0 °C to +85 °C (C grade, commercial)
Maximum Core Frequency 500 MHz [DATA_NEEDED: maximum core frequency MHz]
Packhaging 780-ball FCBGA (HBGA), flip-chip 780-BBGA, FCBGA (H780)
Uri ng Pagpapasok Surface Mount (BGA) Surface Mount
Level ng Sensitivity sa Asid ng Moisture (MSL) 3 (168 hours) [DATA_NEEDED: MSL level per JEDEC J-STD-020]
Packaging Type Tray —
Configuration Memory Support Fast passive parallel, JTAG, Active Serial —
Tindminan RoHS Compliant (per product listings) Compliant (lead-free 'N' suffix)
Logic Elements (LE) — 255,000
Embedded Memory (bits) — 16,672,768
Number of LABs/CLBs — 10,200
Number of Pins / Balls — 780
Supply Voltage (VCCINT) — [DATA_NEEDED: VCCINT nominal V]
Transceivers — [DATA_NEEDED: number of embedded transceivers and max data rate]
DSP Blocks — [DATA_NEEDED: number of DSP blocks and precision]
Configuration Method — SRAM-based, configured via JTAG / passive / active serial / fast passive parallel
Design Toolchain — Altera Quartus II (legacy); Intel Quartus Prime

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