EP3SE260H780C4L vs EP3SE260H780C4N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP3SE260H780C4L sa pamamagitan ng Intel at EP3SE260H780C4N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP3SE260H780C4L | EP3SE260H780C4N |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | NRND | NRND |
| Family | Stratix III E | Stratix III E (Enhanced) |
| Logic Elements | 255,000 | 255,000 |
| LABs/CLBs | 10,200 | — |
| Total RAM Bits | 16,672,768 (16.7 Mbit) | 16,672,768 |
| User I/O Count | 488 | — |
| Packhaging | 780-ball FCBGA (HBGA 33x33 mm) | 780-ball FCBGA (Flip Chip BGA) |
| Speed Grade | C4 (middle/slow tier) | — |
| Core Voltage | 0.9 V (nominal) | 0.86 V to 1.15 V |
| Temperature ng Junction na Operasyon | 0C to +85C (commercial) | — |
| Uri ng Pagpapasok | Surface Mount (flip-chip BGA) | Surface Mount |
| Level ng MSL | [DATA_NEEDED: MSL level] | — |
| Tindminan RoHS | Compliant (lead-free per datasheet) | — |
| Transceivers | Up to 24 multi-gigabit transceivers | — |
| Memory Interface | DDR3, DDR2, QDRII+, RLDRAM II controllers | — |
| Configuration Mode | PS, FPP, JTAG with EPCS/EPCQ | — |
| Logic Array Blocks (LABs) | — | 10,200 |
| Embedded Memory | — | M9K and M144K blocks |
| User I/O Pins | — | 488 |
| DSP Blocks (18x18 Multipliers) | — | 768 |
| PLLs | — | 12 |
| Process Node | — | 65 nm CMOS |
| Maximum Core Clock Frequency | — | 450 MHz |
| Level ng Sensitivity sa Asid ng Moisture (MSL) | — | 3 (168 hours) |
| Temperature na Operasyon | — | 0C to +85C (commercial) |
| Configuration Method | — | Serial/Parallel via Quartus II |