EP3SE50F780C4N vs EP3SE110F780C4LN Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng EP3SE50F780C4N sa pamamagitan ng Intel at EP3SE110F780C4LN sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro EP3SE50F780C4N EP3SE110F780C4LN
Brand Intel Intel
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle NRND Aktibo
Family Stratix III E Stratix III E
Logic Elements (LE) 47,500 107,500
Embedded Memory Bits 5,760,000 —
Embedded Memory (M9K/M144K blocks) 488 (per family datasheet) —
Number of LABs 1900 —
Maximum User I/Os 488 —
DSP Blocks (18x18 multipliers) 432 —
PLLs 12 (per family datasheet) —
Maximum Operating Frequency 717 MHz —
Transceiver Channels Up to 12 (per family, model-dependent) —
Transceiver Data Rate Up to 6.375 Gbps (per Stratix III E family) —
Process Node 40 nm —
Packhaging 780-Ball FBGA, 29 mm x 29 mm, 1.0 mm pitch 780-BBGA, FCBGA (Fine-pitch)
Uri ng Pagpapasok Surface Mount (BGA) Surface Mount (SMT)
Volte ng Pagbibigay Core 0.9 V, I/O 1.2 V-3.3 V (multi-rail) —
Temperature na Operasyon 0C to +85C (C4 commercial grade) 0C to +85C (Commercial)
Configuration Modes JTAG, Passive Serial, Fast Passive Parallel —
Tindminan RoHS Lead-free / RoHS compliant —
Level ng MSL 3 (per JEDEC J-STD-020, FBGA package) 3 (per JEDEC J-STD-020)
Hard Memory Controller DDR2/DDR3 SDRAM (per Stratix III E family) —
Logic Array Blocks (LABs) — 4,300
Embedded Memory — 8,936,448 bits
User I/O Pins — 488
Supply Voltage Core — 0.9 V (typical)
Speed Grade — C4
Lead-Free / RoHS — Yes (N suffix)
Process Technology — 40 nm TSMC
DSP Blocks — Yes (18x18 multipliers)
Tray Packaging — Yes (per distributor listings)

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