H5ANAG4NBJR-UHC vs H5ANAG6NBJR-UHC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5ANAG4NBJR-UHC sa pamamagitan ng SK hynix at H5ANAG6NBJR-UHC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5ANAG4NBJR-UHC | H5ANAG6NBJR-UHC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | DRAM | DRAM |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gb |
| Organisasyon | 256M x16 | 256M x 16 |
| Supply Voltage (VDD) | 1.14 V to 1.26 V (nominal 1.2 V) | — |
| Clock / Data Rate | 1.6 GHz | — |
| Packhaging | FBGA-96 (PBGA96) | PBGA96 / FBGA-96 (TFBGA) |
| Temperature na Operasyon | -40C to +95C | -40C to +95C |
| Interface | CMOS, DDR4 (double data rate) | DDR4 (CMOS) |
| Data Mask (DM) | Yes | — |
| Asynchronous Reset | Yes | Supported |
| On-Die Termination (ODT) | Dynamic ODT | — |
| ZQ Calibration | Yes | Supported |
| Write Leveling | Yes | Supported |
| CRC Function | Yes | — |
| Auto Self-Refresh | Yes | — |
| Uri ng Pagpapasok | Surface Mount (BGA) | — |
| Tindminan RoHS | Compliant | RoHS Compliant |
| Latensya ng CAS | [DATA_NEEDED: CAS Latency / speed bin detail] | [DATA_NEEDED: CAS Latency] |
| Package Dimensions | — | 13 mm length (per JESD-30 R-PBGA-B96) |
| Access Mode | — | Multi Bank, Page Burst |
| Refresh | — | Auto / Self Refresh |
| Data Mask | — | Supported (DM function) |
| On-Chip Termination | — | Dynamic ODT |
| CRC | — | Supported |
| Supply Voltage Class | — | DDR4 (1.2 V class) |
| REACH Compliance | — | Compliant |
| ECCN | — | EAR99 |
| HTS Code | — | 8542.32.00.36 |
| Max Data Rate | — | [DATA_NEEDED: Max Data Rate] |