H5ANAG8NAMR-UHC vs H5ANAG8NCJR-XNC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5ANAG8NAMR-UHC sa pamamagitan ng SK hynix at H5ANAG8NCJR-XNC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5ANAG8NAMR-UHC | H5ANAG8NCJR-XNC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | — | In Stock |
| Presyo ng Yunit (USD) | — | $65.63 |
| Manufacturer | SK Hynix | — |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | 16 Gbit |
| Organisasyon | 2G x 8 | 2G x 8 |
| Rate ng Data | DDR4-2400 (2400 MT/s) | 3200 MT/s (DDR4-3200) |
| Volte ng Pagbibigay | 1.2 V | — |
| Packhaging | FBGA-78 | FBGA-78 (7.5 x 11 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Interface | Parallel, DDR4 | — |
| Bank Group Architecture | DDR4 bank-group architecture | — |
| On-Die Termination (ODT) | Yes | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | 0C to +95C |
| Refresh | Self-refresh and auto-refresh (DDR4) | [DATA_NEEDED: refresh specification] |
| Level ng MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Tindminan RoHS | Compliant (lead-free FBGA package) | Compliant |
| Applications | Data storage, firmware boot, industrial controllers, computing modules | — |
| Supply Voltage (VDD) | — | 1.2 V |
| Process Node | — | 1z nm (non-EUV) |
| Die Bit Density | — | 0.296 Gb/mm2 |
| Peak Bandwidth (per 64-bit channel) | — | 25.6 GB/s at DDR4-3200 |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS Latency] |
| Base Part Number Family | — | H5ANAG8NCJR (16Gb DDR4 CMOS SDRAM) |
| Speed Grade Suffix | — | -XNC (0~95C commercial) |