H5TC4G63AFR-PBJ vs MT41K256M16RE-125:D Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5TC4G63AFR-PBJ sa pamamagitan ng SK hynix at MT41K256M16RE-125:D sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT41K256M16RE-125:D - 4Gb DDR3L SDRAM 256Mx16 | Micron
MT41K256M16RE-125:D ✓ NakahandaPagsanggunian na paghahambing
| Parametro | H5TC4G63AFR-PBJ | MT41K256M16RE-125:D |
|---|---|---|
| Brand | SK hynix | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Laki ng Memory | 4 Gb (256M x 16) | — |
| Volte ng Pagbibigay | 1.35 V | 1.35 V |
| Packhaging | 96-ball TFBGA | FBGA-96 (9x14 mm) |
| Temperature Grade | Industrial (-40°C to +95°C) | — |
| Refresh Cycles | 8192 | — |
| Package Shape | Rectangular | — |
| Number of Terminals | 96 | — |
| Rate ng Data | [DATA_NEEDED: Data rate (e.g., 1600 Mbps)] | 1600 MT/s |
| Latensya ng CAS | [DATA_NEEDED: CAS Latency] | 11 |
| Access Time | 0.225 ns (from H5TC4G63AFR-PBR datasheet) | — |
| Auto Self-Refresh | Yes | — |
| Data Mask | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS Status] | — |
| Density | — | 4 Gb |
| Organisasyon | — | 256M x 16 |
| Temperature na Operasyon | — | 0C to +95C (TC) |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Burst Length | — | 8, 4 |
| On-Die Termination | — | Yes |
| Auto-Refresh | — | Yes |
| Self-Refresh | — | Yes |
| Ball Pitch | — | 0.8 mm |