IGLR70R270D2SXUMA1 vs IGI65D1414A3MSXUMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IGLR70R270D2SXUMA1 sa pamamagitan ng Infineon at IGI65D1414A3MSXUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IGLR70R270D2SXUMA1 - 700V GaN Transistor, 270mΩ CoolGaN G5 | Infineon
IGLR70R270D2SXUMA1 ✓ NakahandaInfineon
IGI65D1414A3MSXUMA1 - 650V CoolGaN Half-Bridge, 140mΩ QFN-32 | Infineon
IGI65D1414A3MSXUMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IGLR70R270D2SXUMA1 | IGI65D1414A3MSXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaN™ G5 | CoolGaN™ HEMT |
| Technology | Gallium Nitride (GaN) HEMT, enhancement-mode | Enhancement-mode GaN HEMT (eMode) |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 700 V | — |
| Continuous Drain Current (ID, Tc) | 7.3 A | — |
| Power Dissipation (PD, Tc) | 28 W | — |
| On-State Resistance (RDS(on), typ.) | 270 mΩ | — |
| Packhaging | PG-TSON-8-8 (ThinPAK) | PG-TIQFN-32-1 (QFN-32, 6x8 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Gate Drive | 0 to 12 V (enhancement-mode, internal gate diode) | — |
| Wafer Process | 200 mm (8-inch) GaN-on-Si | — |
| Tindminan RoHS | Compliant | — |
| Hanay ng Temperature na Operasyon | -40C to +150C (junction) | [DATA_NEEDED: operating temperature range] |
| Reverse Recovery Charge (Qrr) | 0 nC (no body diode) | — |
| Configuration | — | Half-Bridge (2 FETs in QFN-32, high-side + low-side) |
| Drain-Source Voltage (V_DS, max) | — | 650 V |
| On-Resistance (R_DS(on), typ) | — | 140 mΩ per FET |
| Continuous Drain Current | — | 13.7 A (per Newark listing) |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) value] |
| Total Gate Charge (Q_G, typ) | — | [DATA_NEEDED: Q_G total] |
| Output Charge (Q_OSS) | — | [DATA_NEEDED: Q_OSS value] |
| Reverse Recovery Charge (Q_RR) | — | 0 nC (intrinsic to GaN HEMT, no body diode recovery) |
| Thermal Resistance (R_thJA) | — | [DATA_NEEDED: R_thJA value] |
| Typical Applications | — | AC-DC chargers/adapters, totem-pole PFC, BLDC motor drives, Class-D audio, LED lighting |
| Level ng MSL | — | [DATA_NEEDED: MSL level] |
| RoHS Compliance | — | Compliant |