IGLR70R270D2SXUMA1 vs IGI65D1414A3MSXUMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IGLR70R270D2SXUMA1 tarafından Infineon ve IGI65D1414A3MSXUMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IGLR70R270D2SXUMA1 - 700V GaN Transistor, 270mΩ CoolGaN G5 | Infineon
IGLR70R270D2SXUMA1 ✓ AktifInfineon
IGI65D1414A3MSXUMA1 - 650V CoolGaN Half-Bridge, 140mΩ QFN-32 | Infineon
IGI65D1414A3MSXUMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | IGLR70R270D2SXUMA1 | IGI65D1414A3MSXUMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaN™ G5 | CoolGaN™ HEMT |
| Technology | Gallium Nitride (GaN) HEMT, enhancement-mode | Enhancement-mode GaN HEMT (eMode) |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 700 V | — |
| Continuous Drain Current (ID, Tc) | 7.3 A | — |
| Power Dissipation (PD, Tc) | 28 W | — |
| On-State Resistance (RDS(on), typ.) | 270 mΩ | — |
| Paket | PG-TSON-8-8 (ThinPAK) | PG-TIQFN-32-1 (QFN-32, 6x8 mm) |
| Montaj Türü | Surface Mount | Surface Mount |
| Gate Drive | 0 to 12 V (enhancement-mode, internal gate diode) | — |
| Wafer Process | 200 mm (8-inch) GaN-on-Si | — |
| RoHS Durumu | Compliant | — |
| İşletim Sıcaklığı Aralığı | -40C to +150C (junction) | [DATA_NEEDED: operating temperature range] |
| Reverse Recovery Charge (Qrr) | 0 nC (no body diode) | — |
| Configuration | — | Half-Bridge (2 FETs in QFN-32, high-side + low-side) |
| Drain-Source Voltage (V_DS, max) | — | 650 V |
| On-Resistance (R_DS(on), typ) | — | 140 mΩ per FET |
| Continuous Drain Current | — | 13.7 A (per Newark listing) |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) value] |
| Total Gate Charge (Q_G, typ) | — | [DATA_NEEDED: Q_G total] |
| Output Charge (Q_OSS) | — | [DATA_NEEDED: Q_OSS value] |
| Reverse Recovery Charge (Q_RR) | — | 0 nC (intrinsic to GaN HEMT, no body diode recovery) |
| Thermal Resistance (R_thJA) | — | [DATA_NEEDED: R_thJA value] |
| Typical Applications | — | AC-DC chargers/adapters, totem-pole PFC, BLDC motor drives, Class-D audio, LED lighting |
| MSL Seviyesi | — | [DATA_NEEDED: MSL level] |
| RoHS Compliance | — | Compliant |