IGLT65R035D2ATMA1 vs IDL04G65C5XUMA2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IGLT65R035D2ATMA1 sa pamamagitan ng Infineon at IDL04G65C5XUMA2 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IGLT65R035D2ATMA1 - 650V 47A CoolGaN™ G5 Transistor | Infineon
IGLT65R035D2ATMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IGLT65R035D2ATMA1 | IDL04G65C5XUMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | Diodes |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaN™ G5 TOLT | CoolSiC™ Schottky Diode Generation 5 |
| Uri ng Transistor | N-Channel enhancement-mode GaN HEMT | — |
| Drain-Source Voltage (Vdss) | 650 V | — |
| Continuous Drain Current (Id) at Tc | 47 A | — |
| Maximum Power Dissipation (Pd) at Tc | 154 W | — |
| On-Resistance (Rds(on)) | [DATA_NEEDED: typical Rds(on) in mohm] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: typical Vgs(th)] | — |
| Input Capacitance (Ciss) at Vds=400V | 540 pF | — |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: Tj min/max] | — |
| Packhaging | PG-HDSOP-16-8 (top-side cooled) | PG-VSON-4 (DPAK real2pin) Surface Mount |
| Uri ng Pagpapasok | Surface Mount | Surface Mount, Tape & Reel |
| Cooling Configuration | Top-side cooled (TOLT) | — |
| Level ng MSL | [DATA_NEEDED: MSL rating] | — |
| Tindminan RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Production Wafer Size | 200 mm (8 inch) | — |
| Diode Type | — | Silicon Carbide (SiC) Schottky |
| Repetitive Peak Reverse Voltage (V_RRM) | — | 650 V |
| Continuous Forward Current (I_F(AV)) | — | 4 A |
| Total Capacitive Charge (Q_C) | — | 7 nC (typical) |
| Forward Voltage (V_F) | — | 1.7 V at 4 A (typical, per datasheet) |
| Reverse Leakage Current (I_R) | — | 70 µA at 650 V |
| Junction Capacitance (C_J) | — | 130 pF at 1 V, 1 MHz |
| Reverse Recovery Time (t_rr) | — | 0 ns (Schottky, no minority-carrier storage) |
| Temperature ng Junction na Operasyon | — | -55°C to +175°C |
| Bilang ng Pin | — | 4 (with exposed thermal pad) |
| RoHS / REACH | — | RoHS Compliant (per Infineon product page) |