IGLT65R035D2ATMA1 vs IDL04G65C5XUMA2 比較

詳細並排比較 IGLT65R035D2ATMA1 由 Infineon 與 IDL04G65C5XUMA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IGLT65R035D2ATMA1 IGLT65R035D2ATMA1 - 650V 47A CoolGaN™ G5 Transistor | Infineon

IGLT65R035D2ATMA1 - 650V 47A CoolGaN™ G5 Transistor | Infineon

IGLT65R035D2ATMA1 ✓ 啟用中
Infineon
IDL04G65C5XUMA2 IDL04G65C5XUMA2 - 650V 4A SiC Schottky Diode | Infineon

IDL04G65C5XUMA2 - 650V 4A SiC Schottky Diode | Infineon

IDL04G65C5XUMA2 ✓ 啟用中

規格比較

參數 IGLT65R035D2ATMA1 IDL04G65C5XUMA2
品牌 Infineon Infineon
類別 MOSFETs Diodes
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolGaN™ G5 TOLT CoolSiC™ Schottky Diode Generation 5
電晶體類型 N-Channel enhancement-mode GaN HEMT —
Drain-Source Voltage (Vdss) 650 V —
Continuous Drain Current (Id) at Tc 47 A —
Maximum Power Dissipation (Pd) at Tc 154 W —
On-Resistance (Rds(on)) [DATA_NEEDED: typical Rds(on) in mohm] —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: typical Vgs(th)] —
Input Capacitance (Ciss) at Vds=400V 540 pF —
工作溫度範圍 [DATA_NEEDED: Tj min/max] —
封裝 PG-HDSOP-16-8 (top-side cooled) PG-VSON-4 (DPAK real2pin) Surface Mount
安裝類型 Surface Mount Surface Mount, Tape & Reel
Cooling Configuration Top-side cooled (TOLT) —
MSL 等級 [DATA_NEEDED: MSL rating] —
RoHS 狀態 Compliant —
Lead-Free Yes —
Production Wafer Size 200 mm (8 inch) —
Diode Type — Silicon Carbide (SiC) Schottky
Repetitive Peak Reverse Voltage (V_RRM) — 650 V
Continuous Forward Current (I_F(AV)) — 4 A
Total Capacitive Charge (Q_C) — 7 nC (typical)
Forward Voltage (V_F) — 1.7 V at 4 A (typical, per datasheet)
Reverse Leakage Current (I_R) — 70 µA at 650 V
Junction Capacitance (C_J) — 130 pF at 1 V, 1 MHz
Reverse Recovery Time (t_rr) — 0 ns (Schottky, no minority-carrier storage)
工作接面溫度 — -55°C to +175°C
腳位數 — 4 (with exposed thermal pad)
RoHS / REACH — RoHS Compliant (per Infineon product page)

資料表與資源

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