IPD046N08N5ATMA1 vs BSC0502NSIATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD046N08N5ATMA1 sa pamamagitan ng Infineon at BSC0502NSIATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPD046N08N5ATMA1 IPD046N08N5ATMA1 - 80V 90A 4.6mΩ OptiMOS 5 MOSFET | Infineon

IPD046N08N5ATMA1 - 80V 90A 4.6mΩ OptiMOS 5 MOSFET | Infineon

IPD046N08N5ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPD046N08N5ATMA1 BSC0502NSIATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Product Series OptiMOS™ 5 80V —
Uri ng Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) Max 80 V 30 V
Continuous Drain Current (ID) at Tc=25°C 90 A —
On-Resistance RDS(on) Max at VGS=10V 4.6 mΩ —
Gate-Source Voltage (VGS) Max ±20 V —
Power Dissipation (PD) at Tc=25°C 125 W —
Hanay ng Temperature ng Junction na Operasyon -55 °C to +175 °C —
Packhaging / Kaso PG-TO252-3 (DPAK), 3-pin (2 leads + tab) —
Uri ng Pagpapasok Surface Mount Surface Mount
Technology OptiMOS™ 5 trench MOSFET OptiMOS 5 (Trench MOSFET)
Tindminan RoHS ROHS3 Compliant Compliant
Level ng MSL 1 (per JEDEC J-STD-020) —
Configuration Single N-channel, 3-pin (Gate / Drain tab / Source) —
FET Type — N-Channel
Continuous Drain Current (ID) at TC — 100 A
Continuous Drain Current (ID) at TA — 26 A
RDS(on) Max at VGS=10V — 2.3 mOhm
Gate Charge QG (0V to 4.5V) Typ — 9.0 nC
Output Charge QOSS Typ — 13.5 nC
Power Dissipation at TA (Ta=25C) — 2.5 W
Power Dissipation at TC (Tc=25C) — 43 W
Gate Threshold Voltage VGS(th) Typ — [DATA_NEEDED: VGS(th) typical value]
Hanay ng Temperature na Operasyon — -55C to +150C
Packhaging — PG-TDSON-8 (SuperSO8 5x6)

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