IPD046N08N5ATMA1 vs BSC0502NSIATMA1 Comparison
Detailed side-by-side comparison of IPD046N08N5ATMA1 by Infineon and BSC0502NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0502NSIATMA1 - 30V N-Channel OptiMOS 5 MOSFET 2.3mOhm | Infineon
BSC0502NSIATMA1 ✓ ActiveSpecification Comparison
| Parameter | IPD046N08N5ATMA1 | BSC0502NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | — |
| Product Series | OptiMOS™ 5 80V | — |
| Transistor Type | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) Max | 80 V | 30 V |
| Continuous Drain Current (ID) at Tc=25°C | 90 A | — |
| On-Resistance RDS(on) Max at VGS=10V | 4.6 mΩ | — |
| Gate-Source Voltage (VGS) Max | ±20 V | — |
| Power Dissipation (PD) at Tc=25°C | 125 W | — |
| Operating Junction Temperature Range | -55 °C to +175 °C | — |
| Package / Case | PG-TO252-3 (DPAK), 3-pin (2 leads + tab) | — |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS™ 5 trench MOSFET | OptiMOS 5 (Trench MOSFET) |
| RoHS Status | ROHS3 Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | — |
| Configuration | Single N-channel, 3-pin (Gate / Drain tab / Source) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TC | — | 100 A |
| Continuous Drain Current (ID) at TA | — | 26 A |
| RDS(on) Max at VGS=10V | — | 2.3 mOhm |
| Gate Charge QG (0V to 4.5V) Typ | — | 9.0 nC |
| Output Charge QOSS Typ | — | 13.5 nC |
| Power Dissipation at TA (Ta=25C) | — | 2.5 W |
| Power Dissipation at TC (Tc=25C) | — | 43 W |
| Gate Threshold Voltage VGS(th) Typ | — | [DATA_NEEDED: VGS(th) typical value] |
| Operating Temperature Range | — | -55C to +150C |
| Package | — | PG-TDSON-8 (SuperSO8 5x6) |