IPD046N08N5ATMA1 vs BSC0502NSIATMA1 比較
詳細並排比較 IPD046N08N5ATMA1 由 Infineon 與 BSC0502NSIATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPD046N08N5ATMA1 | BSC0502NSIATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Product Series | OptiMOS™ 5 80V | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) Max | 80 V | 30 V |
| Continuous Drain Current (ID) at Tc=25°C | 90 A | — |
| On-Resistance RDS(on) Max at VGS=10V | 4.6 mΩ | — |
| Gate-Source Voltage (VGS) Max | ±20 V | — |
| Power Dissipation (PD) at Tc=25°C | 125 W | — |
| 工作接面溫度範圍 | -55 °C to +175 °C | — |
| 封裝 / 外殼 | PG-TO252-3 (DPAK), 3-pin (2 leads + tab) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | OptiMOS™ 5 trench MOSFET | OptiMOS 5 (Trench MOSFET) |
| RoHS 狀態 | ROHS3 Compliant | Compliant |
| MSL 等級 | 1 (per JEDEC J-STD-020) | — |
| Configuration | Single N-channel, 3-pin (Gate / Drain tab / Source) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TC | — | 100 A |
| Continuous Drain Current (ID) at TA | — | 26 A |
| RDS(on) Max at VGS=10V | — | 2.3 mOhm |
| Gate Charge QG (0V to 4.5V) Typ | — | 9.0 nC |
| Output Charge QOSS Typ | — | 13.5 nC |
| Power Dissipation at TA (Ta=25C) | — | 2.5 W |
| Power Dissipation at TC (Tc=25C) | — | 43 W |
| Gate Threshold Voltage VGS(th) Typ | — | [DATA_NEEDED: VGS(th) typical value] |
| 工作溫度範圍 | — | -55C to +150C |
| 封裝 | — | PG-TDSON-8 (SuperSO8 5x6) |