IPD50N10S3L16ATMA2 vs IPD50N10S3L16ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD50N10S3L16ATMA2 sa pamamagitan ng Infineon at IPD50N10S3L16ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPD50N10S3L16ATMA1 IPD50N10S3L16ATMA1 - 100V N-Ch 50A OptiMOS MOSFET DPAK | Infineon

IPD50N10S3L16ATMA1 - 100V N-Ch 50A OptiMOS MOSFET DPAK | Infineon

IPD50N10S3L16ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPD50N10S3L16ATMA2 IPD50N10S3L16ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS-T OptiMOS-T
FET Type N-Channel —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tc=25°C 50 A —
Pulsed Drain Current (IDM) 180 A —
Maximum R_DS(on) at VGS=10V 15 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Total Power Dissipation (Ptot) at Tc=25°C 100 W —
Hanay ng Temperature na Operasyon -55 °C to +175 °C (junction) -55C to +175C
Packhaging PG-TO252-3-11 (DPAK) PG-TO252-3-11 (DPAK)
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pin 3 (2 + Tab) —
Automotive Qualification AEC-Q101 qualified AEC-Q101
Tindminan RoHS Compliant Compliant
Level ng MSL 1 (per JEDEC J-STD-020) —
Delivery Form Tape and Reel (T&R) —
Part Number — IPD50N10S3L16ATMA1
Uri ng Transistor — N-Channel MOSFET
Drain-Source Voltage (V_DS) — 100 V
Continuous Drain Current (I_D, T_C=25C) — 50 A
Pulsed Drain Current (I_DM) — 200 A
R_DS(on) max @ V_GS=10V — 15 mΩ
Gate Threshold Voltage (V_GS(th)) — 2.5 V (typ)
Power Dissipation (P_D, T_C=25C) — 100 W
Packaging — Tape & Reel

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