IPD60R145CFD7ATMA1 vs IPD60R380C6ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD60R145CFD7ATMA1 sa pamamagitan ng Infineon at IPD60R380C6ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD60R145CFD7ATMA1 - 600V 16A 145mOhm CoolMOS CFD7 MOSFET | Infineon
IPD60R145CFD7ATMA1 ✓ NakahandaInfineon
IPD60R380C6ATMA1 - 600V CoolMOS C6 N-Channel MOSFET | Infineon
IPD60R380C6ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD60R145CFD7ATMA1 | IPD60R380C6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | N-Channel |
| Technology | CoolMOS CFD7 (superjunction) | CoolMOS C6 Superjunction |
| Drain-Source Voltage (V<sub>DS</sub>) | 600 V | — |
| Continuous Drain Current (I<sub>D</sub>) | 16 A (T<sub>C</sub> = 25C) | — |
| On-Resistance R<sub>DS(on)</sub> max | 145 mOhm | — |
| Power Dissipation (P<sub>D</sub>) | 83 W (T<sub>C</sub> = 25C) | — |
| Gate Threshold Voltage V<sub>GS(th)</sub> | [DATA_NEEDED: Vth typical/min/max] | — |
| Packhaging | TO-252AA (DPAK) surface mount | PG-TO252-3 (DPAK) |
| Body Diode | Integrated fast body diode (low Q<sub>rr</sub>) | — |
| Temperature na Operasyon | -55C to +150C (junction) | — |
| Uri ng Pagpapasok | Surface Mount (DPAK, 3-pin + tab) | Surface Mount |
| Bilang ng Pin | 3 (Gate, Drain, Source) | — |
| Series | CoolMOS CFD7 | — |
| Level ng MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Tindminan RoHS | Compliant | Compliant |
| Target Application | ZVS / LLC resonant converters, soft switching | — |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID) at TC=25C | — | 10.6 A |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance RDS(on) max @ VGS=10V | — | 380 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: gate-source voltage max] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at TC=25C | — | 83 W |
| Operating Junction Temperature (TJ) | — | -55C to +150C |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| Drain-Tab Connection | — | Exposed pad (electrically connected to drain) |