IPD60R145CFD7ATMA1 vs IPD60R380C6ATMA1 比較

詳細並排比較 IPD60R145CFD7ATMA1 由 Infineon 與 IPD60R380C6ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPD60R380C6ATMA1 IPD60R380C6ATMA1 - 600V CoolMOS C6 N-Channel MOSFET | Infineon

IPD60R380C6ATMA1 - 600V CoolMOS C6 N-Channel MOSFET | Infineon

IPD60R380C6ATMA1 ✓ 啟用中

規格比較

參數 IPD60R145CFD7ATMA1 IPD60R380C6ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel N-Channel
Technology CoolMOS CFD7 (superjunction) CoolMOS C6 Superjunction
Drain-Source Voltage (V<sub>DS</sub>) 600 V —
Continuous Drain Current (I<sub>D</sub>) 16 A (T<sub>C</sub> = 25C) —
On-Resistance R<sub>DS(on)</sub> max 145 mOhm —
Power Dissipation (P<sub>D</sub>) 83 W (T<sub>C</sub> = 25C) —
Gate Threshold Voltage V<sub>GS(th)</sub> [DATA_NEEDED: Vth typical/min/max] —
封裝 TO-252AA (DPAK) surface mount PG-TO252-3 (DPAK)
Body Diode Integrated fast body diode (low Q<sub>rr</sub>) —
工作溫度 -55C to +150C (junction) —
安裝類型 Surface Mount (DPAK, 3-pin + tab) Surface Mount
腳位數 3 (Gate, Drain, Source) —
Series CoolMOS CFD7 —
MSL 等級 [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
RoHS 狀態 Compliant Compliant
Target Application ZVS / LLC resonant converters, soft switching —
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID) at TC=25C — 10.6 A
Pulsed Drain Current (ID,pulse) — [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance RDS(on) max @ VGS=10V — 380 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: gate-source voltage max]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Power Dissipation (PD) at TC=25C — 83 W
Operating Junction Temperature (TJ) — -55C to +150C
Storage Temperature — [DATA_NEEDED: storage temperature]
Drain-Tab Connection — Exposed pad (electrically connected to drain)

資料表與資源

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