IRFB3207ZPBF vs IPP069N20NM6AKSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFB3207ZPBF sa pamamagitan ng Infineon at IPP069N20NM6AKSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPP069N20NM6AKSA1 - 200V 136A OptiMOS 6 N-Channel MOSFET | Infineon
IPP069N20NM6AKSA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IRFB3207ZPBF | IPP069N20NM6AKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRFB3207ZPBF | — |
| Series | HEXFET | — |
| Technology | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) | OptiMOS 6 trench MOSFET |
| Drain-Source Voltage (VDS) | 75 V | 200 V |
| Continuous Drain Current (ID) at TC=25C | 120 A | 136 A |
| Silicon-Limited Drain Current | 170 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | — |
| On-Resistance RDS(on) typ @ VGS=10V | 3.3 mOhm | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.1 mOhm | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissition (PD) at TC=25C | 300 W | — |
| Temperature ng Junction na Operasyon | -55 C to +175 C | — |
| Packhaging | TO-220AB (3-lead through-hole) | PG-TO220-3-1 (TO-220-3 through-hole, 3+tab) |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | — |
| Level ng MSL | N/A (through-hole) | N/A (through-hole package) |
| Avalanche Rated | Yes (improved Z-variant ruggedness) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 15.3 A |
| Power Dissipation (PD) at TC=25C | — | 300 W |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| On-Resistance RDS(on) max at VGS=10V | — | 6.9 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Total Gate Charge at VGS=10V (Qg) | — | [DATA_NEEDED: Qg value] |
| Hanay ng Temperature na Operasyon | — | -55C to +175C |
| Tindminan RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Tab Connection | — | Electrically connected to Drain |