IRFB3207ZPBF vs IPP069N20NM6AKSA1 比較
詳細並排比較 IRFB3207ZPBF 由 Infineon 與 IPP069N20NM6AKSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPP069N20NM6AKSA1 - 200V 136A OptiMOS 6 N-Channel MOSFET | Infineon
IPP069N20NM6AKSA1 ✓ 啟用中規格比較
| 參數 | IRFB3207ZPBF | IPP069N20NM6AKSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRFB3207ZPBF | — |
| Series | HEXFET | — |
| Technology | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) | OptiMOS 6 trench MOSFET |
| Drain-Source Voltage (VDS) | 75 V | 200 V |
| Continuous Drain Current (ID) at TC=25C | 120 A | 136 A |
| Silicon-Limited Drain Current | 170 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | — |
| On-Resistance RDS(on) typ @ VGS=10V | 3.3 mOhm | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.1 mOhm | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissition (PD) at TC=25C | 300 W | — |
| 工作接面溫度 | -55 C to +175 C | — |
| 封裝 | TO-220AB (3-lead through-hole) | PG-TO220-3-1 (TO-220-3 through-hole, 3+tab) |
| 安裝類型 | Through Hole | Through Hole |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | — |
| MSL 等級 | N/A (through-hole) | N/A (through-hole package) |
| Avalanche Rated | Yes (improved Z-variant ruggedness) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 15.3 A |
| Power Dissipation (PD) at TC=25C | — | 300 W |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| On-Resistance RDS(on) max at VGS=10V | — | 6.9 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Total Gate Charge at VGS=10V (Qg) | — | [DATA_NEEDED: Qg value] |
| 工作溫度範圍 | — | -55C to +175C |
| RoHS 狀態 | — | Compliant |
| Lead-Free | — | Yes |
| Tab Connection | — | Electrically connected to Drain |