IRFB3207ZPBF vs IRFB7437PBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFB3207ZPBF sa pamamagitan ng Infineon at IRFB7437PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRFB3207ZPBF | IRFB7437PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon (formerly International Rectifier) |
| Part Number | IRFB3207ZPBF | — |
| Series | HEXFET | — |
| Technology | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) | StrongIRFET™, N-Channel Trench MOSFET |
| Drain-Source Voltage (VDS) | 75 V | 40 V |
| Continuous Drain Current (ID) at TC=25C | 120 A | — |
| Silicon-Limited Drain Current | 170 A | 250 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | 3.3 mOhm | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.1 mOhm | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissition (PD) at TC=25C | 300 W | — |
| Temperature ng Junction na Operasyon | -55 C to +175 C | -55°C to +175°C |
| Packhaging | TO-220AB (3-lead through-hole) | TO-220AB (through-hole, 3 leads) |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | — |
| Level ng MSL | N/A (through-hole) | Not Applicable (through-hole package) |
| Avalanche Rated | Yes (improved Z-variant ruggedness) | — |
| Continuous Drain Current (ID, Tc=25°C) | — | 195 A |
| R_DS(on) typ @ VGS=10V | — | 1.5 mΩ |
| R_DS(on) max @ VGS=10V | — | 2.0 mΩ |
| Gate-Source Threshold Voltage (VGS(th) typ) | — | 3.0 V (1.7 V min, 3.9 V max per datasheet family) |
| Total Gate Charge (Qg) | — | 150 nC |
| Miller Plateau Charge (Qgd) | — | 49 nC |
| Power Dissipation (PD @ Tc=25°C) | — | 230 W |
| Thermal Resistance Junction-to-Case (RθJC) | — | 0.62 °C/W |
| Lead Finish | — | Lead-free (PBF - Pb-free plating) |
| Tindminan RoHS | — | Compliant |
| AEC-Q101 Automotive | — | Not qualified (industrial/consumer) |