IRFB3207ZPBF vs IRFB7437PBF 比較

詳細並排比較 IRFB3207ZPBF 由 Infineon 與 IRFB7437PBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRFB3207ZPBF IRFB7437PBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon (formerly International Rectifier)
Part Number IRFB3207ZPBF —
Series HEXFET —
Technology N-Channel MOSFET (HEXFET, Z-suffix ruggedized) StrongIRFET™, N-Channel Trench MOSFET
Drain-Source Voltage (VDS) 75 V 40 V
Continuous Drain Current (ID) at TC=25C 120 A —
Silicon-Limited Drain Current 170 A 250 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) typ @ VGS=10V 3.3 mOhm —
On-Resistance RDS(on) max @ VGS=10V 4.1 mOhm —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th)] —
Total Gate Charge Qg [DATA_NEEDED: total gate charge] —
Power Dissition (PD) at TC=25C 300 W —
工作接面溫度 -55 C to +175 C -55°C to +175°C
封裝 TO-220AB (3-lead through-hole) TO-220AB (through-hole, 3 leads)
安裝類型 Through Hole Through Hole
Lead-Free / RoHS Yes (PBF suffix = lead-free) —
MSL 等級 N/A (through-hole) Not Applicable (through-hole package)
Avalanche Rated Yes (improved Z-variant ruggedness) —
Continuous Drain Current (ID, Tc=25°C) — 195 A
R_DS(on) typ @ VGS=10V — 1.5 mΩ
R_DS(on) max @ VGS=10V — 2.0 mΩ
Gate-Source Threshold Voltage (VGS(th) typ) — 3.0 V (1.7 V min, 3.9 V max per datasheet family)
Total Gate Charge (Qg) — 150 nC
Miller Plateau Charge (Qgd) — 49 nC
Power Dissipation (PD @ Tc=25°C) — 230 W
Thermal Resistance Junction-to-Case (RθJC) — 0.62 °C/W
Lead Finish — Lead-free (PBF - Pb-free plating)
RoHS 狀態 — Compliant
AEC-Q101 Automotive — Not qualified (industrial/consumer)

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