IRFB4020PBF vs IRFB4410PBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFB4020PBF sa pamamagitan ng Infineon at IRFB4410PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFB4020PBF IRFB4410PBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel N-Channel
Technology IR MOSFET (HEXFET) MOSFET (Metal Oxide) - HEXFET
Drain-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at TC 18 A —
Power Dissipation (PD) at TC 100 W —
RDS(on) Maximum 100 mOhm —
Gate-Source Voltage (VGS) Maximum 20 V —
Thermal Resistance, Junction-to-Case (RthJC) 1.43 C/W —
Temperature ng Junction na Operasyon 175 C (max) —
Packhaging TO-220AB (through-hole) TO-220AB (through-hole)
Uri ng Pagpapasok Through Hole Through Hole
Bilang ng Pin 3 (Gate, Drain, Source) —
Lead-Free (PbF suffix) Yes —
Market Qualification Consumer —
Recommended Use Class-D audio amplifier and high-efficiency switching applications —
Drain-to-Source Voltage (Vdss) — 100 V
Continuous Drain Current (Id) @ 25C — 88 A (Tc)
Continuous Drain Current (Id) @ 100C — [DATA_NEEDED: Id @ 100C]
Pulsed Drain Current (Idm) — [DATA_NEEDED: Idm pulse]
Gate-to-Source Voltage (Vgs) — [DATA_NEEDED: Vgs max]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th)]
RDS(on) max @ VGS=10V — 10 mOhm
Total Gate Charge (Qg) — 120 nC
Power Dissipation (Pd) — 200 W (Tc)
Hanay ng Temperature na Operasyon — -55C to +175C (Tj)
Avalanche Energy Rating — Single-pulse avalanche rated
Level ng MSL — 1 (unlimited)
Tindminan RoHS — Compliant (Pb-free PBF suffix)
Series — HEXFET

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