IRFB4020PBF vs IRFB4410PBF 比較
詳細並排比較 IRFB4020PBF 由 Infineon 與 IRFB4410PBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRFB4020PBF | IRFB4410PBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | N-Channel |
| Technology | IR MOSFET (HEXFET) | MOSFET (Metal Oxide) - HEXFET |
| Drain-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at TC | 18 A | — |
| Power Dissipation (PD) at TC | 100 W | — |
| RDS(on) Maximum | 100 mOhm | — |
| Gate-Source Voltage (VGS) Maximum | 20 V | — |
| Thermal Resistance, Junction-to-Case (RthJC) | 1.43 C/W | — |
| 工作接面溫度 | 175 C (max) | — |
| 封裝 | TO-220AB (through-hole) | TO-220AB (through-hole) |
| 安裝類型 | Through Hole | Through Hole |
| 腳位數 | 3 (Gate, Drain, Source) | — |
| Lead-Free (PbF suffix) | Yes | — |
| Market Qualification | Consumer | — |
| Recommended Use | Class-D audio amplifier and high-efficiency switching applications | — |
| Drain-to-Source Voltage (Vdss) | — | 100 V |
| Continuous Drain Current (Id) @ 25C | — | 88 A (Tc) |
| Continuous Drain Current (Id) @ 100C | — | [DATA_NEEDED: Id @ 100C] |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: Idm pulse] |
| Gate-to-Source Voltage (Vgs) | — | [DATA_NEEDED: Vgs max] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th)] |
| RDS(on) max @ VGS=10V | — | 10 mOhm |
| Total Gate Charge (Qg) | — | 120 nC |
| Power Dissipation (Pd) | — | 200 W (Tc) |
| 工作溫度範圍 | — | -55C to +175C (Tj) |
| Avalanche Energy Rating | — | Single-pulse avalanche rated |
| MSL 等級 | — | 1 (unlimited) |
| RoHS 狀態 | — | Compliant (Pb-free PBF suffix) |
| Series | — | HEXFET |