IRFR9024NTRPBF vs IRFR9024NTRLPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFR9024NTRPBF sa pamamagitan ng Infineon at IRFR9024NTRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRFR9024NTRPBF | IRFR9024NTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | $0.17 | — |
| Polarity | P-Channel | P-Channel |
| VDS (Drain-Source Voltage) | -55 V | — |
| Continuous Drain Current (Tc=25C) | -11 A | — |
| Pulsed Drain Kuru-kuryente | [DATA_NEEDED: pulsed drain current] | — |
| VGS (Gate-Source Voltage) | ±20 V | — |
| VGS(th) (Threshold Voltage) | [DATA_NEEDED: VGS(th) typical] | — |
| RDS(on) Max at VGS=-10V | 175 mOhm | — |
| Total Gate Charge (Qg) | 12.7 nC | — |
| Maximum Power Dissipation (Tc=25C) | 38 W | — |
| Temperature ng Junction na Operasyon | -55C to +175C | — |
| Packhaging | TO-252AA (DPAK) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 3 | 3 (Drain, Gate, Source + Tab) |
| Technology | HEXFET (Gen 5) | HEXFET (Generation 5) |
| Tindminan RoHS | Compliant | — |
| MOSFET Operating Mode | — | Enhancement |
| Drain-Source Voltage (VDS) | — | -55 V |
| Continuous Drain Current (ID) at TC=25C | — | -11 A |
| On-Resistance RDS(on) max at VGS=-10V | — | 175 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Power Dissipation (PD) at TC=25C | — | 38 W |
| Gate Charge (Qg) typical | — | 12.7 nC |
| Package Type | — | TO-252AA (DPAK) |
| Hanay ng Temperature na Operasyon | — | -55C to +175C |
| Lead-Free / RoHS | — | Yes (LPBF suffix) |
| Reel Orientation | — | Left (TRL suffix) |