IRFR9024NTRPBF vs IRFR9024NTRLPBF 比較

詳細並排比較 IRFR9024NTRPBF 由 Infineon 與 IRFR9024NTRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFR9024NTRPBF IRFR9024NTRPBF - 55V 11A P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRPBF - 55V 11A P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRPBF ✓ 啟用中
Infineon
IRFR9024NTRLPBF IRFR9024NTRLPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRLPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRLPBF ✓ 啟用中

規格比較

參數 IRFR9024NTRPBF IRFR9024NTRLPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
單價 (USD) $0.17 —
Polarity P-Channel P-Channel
VDS (Drain-Source Voltage) -55 V —
Continuous Drain Current (Tc=25C) -11 A —
脈衝汲極電流 [DATA_NEEDED: pulsed drain current] —
VGS (Gate-Source Voltage) ±20 V —
VGS(th) (Threshold Voltage) [DATA_NEEDED: VGS(th) typical] —
RDS(on) Max at VGS=-10V 175 mOhm —
Total Gate Charge (Qg) 12.7 nC —
Maximum Power Dissipation (Tc=25C) 38 W —
工作接面溫度 -55C to +175C —
封裝 TO-252AA (DPAK) —
安裝類型 Surface Mount Surface Mount
腳位數 3 3 (Drain, Gate, Source + Tab)
Technology HEXFET (Gen 5) HEXFET (Generation 5)
RoHS 狀態 Compliant —
MOSFET Operating Mode — Enhancement
Drain-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID) at TC=25C — -11 A
On-Resistance RDS(on) max at VGS=-10V — 175 mOhm
Gate-Source Voltage (VGS) max — +/-20 V
Power Dissipation (PD) at TC=25C — 38 W
Gate Charge (Qg) typical — 12.7 nC
Package Type — TO-252AA (DPAK)
工作溫度範圍 — -55C to +175C
Lead-Free / RoHS — Yes (LPBF suffix)
Reel Orientation — Left (TRL suffix)

資料表與資源

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